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公开(公告)号：US20050127511A1
公开(公告)日：2005-06-16
申请号：US10735845
申请日：2003-12-16
申请人： Chih-Chao Yang , Louis Hsu , Keith Wong , Timothy Dalton , Carl Radens , Larry Clevenger
发明人： Chih-Chao Yang , Louis Hsu , Keith Wong , Timothy Dalton , Carl Radens , Larry Clevenger
IPC分类号： H01L21/768 , H01L23/48 , H01L23/52 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76844 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76834 , H01L21/76849 , H01L21/76862 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of making a diffusion barrier for a interconnect structure. The method comprises: providing a conductive line in a bottom dielectric trench; depositing a sacrificial liner on the cap layer; depositing an interlayer dielectric; forming a trench and a via in the top interlayer dielectric; and removing a portion of the cap layer and the sacrificial layer proximate to the bottom surface of the via. The removed portions of the cap layer and sacrificial layer deposit predominantly along the lower sidewalls of the via. The conductive line is in contact with a cap layer, and the sacrificial layer is in contact with the cap layer. The invention is also directed to the interconnect structures resulting from the inventive process.
摘要翻译： 制造互连结构的扩散阻挡层的方法。 该方法包括：在底部电介质沟槽中提供导线; 在所述盖层上沉积牺牲衬垫; 沉积层间电介质; 在顶层间电介质中形成沟槽和通孔; 以及去除靠近通孔底表面的覆盖层和牺牲层的一部分。 盖层和牺牲层的去除部分主要沿着通孔的下侧壁沉积。 导线与盖层接触，牺牲层与盖层接触。 本发明还涉及由本发明方法产生的互连结构。
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公开(公告)号：US20050128682A1
公开(公告)日：2005-06-16
申请号：US11043760
申请日：2005-01-26
申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Vang
发明人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Hon Wong , Chih-Chao Vang
摘要： A method and apparatus for adjusting capacitance of an on-chip capacitor uses exposure of a dielectric material of the capacitor to an ion beam comprising ions of at least one material to modify a dielectric constant of the dielectric material.
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公开(公告)号：US20090312046A1
公开(公告)日：2009-12-17
申请号：US12137185
申请日：2008-06-11
申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
发明人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
摘要： A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harvesting unit embedded inside the wireless device. An intelligent wireless power charging system further comprises at least two batteries and at least two RF adaptor devices coupled to an AC power line. The first adaptor is set for data communication while the second adaptor is used to transmit the power. In addition, when a first battery is in use during active mode, the second battery is subjected to wireless charging.
摘要翻译： 一种用于无线网络设备智能电源管理的系统和方法。 该系统通过无线电力充电方法提供可靠的无线通信，以及在无线设备中维持电池的电力容量的方法。 电池通过嵌入在无线设备内部的射频收集单元进行充电。 智能无线电力充电系统还包括耦合到AC电力线的至少两个电池和至少两个RF适配器装置。 第一个适配器设置为数据通信，而第二个适配器用于传输电源。 此外，当在活动模式期间使用第一电池时，对第二电池进行无线充电。
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公开(公告)号：US08024012B2
公开(公告)日：2011-09-20
申请号：US12137185
申请日：2008-06-11
申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
发明人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
摘要： A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harvesting unit embedded inside the wireless device. An intelligent wireless power charging system further comprises at least two batteries and at least two RF adaptor devices coupled to an AC power line. The first adaptor is set for data communication while the second adaptor is used to transmit the power. In addition, when a first battery is in use during active mode, the second battery is subjected to wireless charging.
摘要翻译： 一种用于无线网络设备智能电源管理的系统和方法。 该系统通过无线电力充电方法提供可靠的无线通信，以及在无线设备中维持电池的电力容量的方法。 电池通过嵌入在无线设备内部的射频收集单元进行充电。 智能无线电力充电系统还包括耦合到AC电力线的至少两个电池和至少两个RF适配器装置。 第一个适配器设置为数据通信，而第二个适配器用于传输电源。 此外，当在活动模式期间使用第一电池时，对第二电池进行无线充电。
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公开(公告)号：US07052621B2
公开(公告)日：2006-05-30
申请号：US10461090
申请日：2003-06-13
申请人： Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
发明人： Kaushik Kumar , Lawrence Clevenger , Timothy Dalton , Douglas C. La Tulipe , Andy Cowley , Erdem Kaltalioglu , Jochen Schacht , Andrew H. Simon , Mark Hoinkis , Steffen K. Kaldor , Chih-Chao Yang
IPC分类号： C23F1/00
CPC分类号： H01L21/76832 , H01L21/0332 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L2221/1036 , Y10T428/12576 , Y10T428/12806 , Y10T428/265 , Y10T428/31678
摘要： A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).
摘要翻译： 用于制造半导体器件的双镶嵌工艺的金属硬掩模。 金属硬掩模具有有利的半透明特性，以有助于在制造半导体器件时水平之间的对准，并避免形成金属氧化物残留物沉积物。 金属硬掩模包括TiN（氮化钛）的第一或第一层和TaN（氮化钽）的第二或覆盖层。
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公开(公告)号：US20080014744A1
公开(公告)日：2008-01-17
申请号：US11860602
申请日：2007-09-25
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
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公开(公告)号：US20080006944A1
公开(公告)日：2008-01-10
申请号：US11860590
申请日：2007-09-25
IPC分类号： H01L23/52
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
摘要翻译： 一种镶嵌线及其形成方法。 该方法包括：在电介质层的顶表面上形成掩模层; 在掩模层中形成开口; 在电介质层中形成沟槽，其中电介质层不被掩模层保护; 使掩模层下方的沟槽的侧壁凹陷; 在沟槽和掩模层的所有暴露表面上形成共形导电衬垫; 用芯电导体填充沟槽; 去除在电介质层的顶表面上方延伸的导电衬垫的部分，并去除掩模层; 以及在所述芯导体的顶表面上形成导电帽。 该结构包括包覆在导电衬垫中的芯导体和与未被导电衬垫覆盖的芯导体的顶表面接触的导电覆盖层。
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28.发明申请Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure 审中-公开从混合电介质结构中去除基于碳氟化合物的残留物公开(公告)号：US20070059922A1
公开(公告)日：2007-03-15
申请号：US11162511
申请日：2005-09-13
申请人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Kaushik Kumar , Douglas La Tulipe , David Rath , Chih-Chao Yang
发明人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Kaushik Kumar , Douglas La Tulipe , David Rath , Chih-Chao Yang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/02063 , H01L21/76814 , H01L21/76835
摘要： The present invention relates to methods for post-etch, particularly post-RIE, removal of fluorocarbon-based residues from a hybrid dielectric structure. The hybrid dielectric structure contains a first dielectric material, and a line-level dielectric layer containing a second, different dielectric material, and wherein said second, different dielectric material comprises a polymeric thermoset dielectric material having a dielectric constant less than 4. Low energy electron beam or low temperature annealing is utilized by the present invention for removal of the fluorocarbon-based residues from such a hybrid dielectric structure, without damaging the low-k polymeric thermoset dielectric material contained in such a hybrid dielectric structure.
摘要翻译： 本发明涉及用于从混合电介质结构去除基于碳氟化合物的残留物的后蚀刻，特别是后RIE的方法。 混合电介质结构包含第一电介质材料和含有第二不同介电材料的线路级介电层，并且其中所述第二不同介电材料包含介电常数小于4的聚合物热固性介电材料。低能电子 本发明使用光束或低温退火来从这种混合电介质结构中除去基于碳氟化合物的残留物，而不会损坏这种混合电介质结构中所含的低k聚合物热固性介电材料。
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公开(公告)号：US07091542B1
公开(公告)日：2006-08-15
申请号：US10905973
申请日：2005-01-28
IPC分类号： H01L29/72
CPC分类号： H01L28/55 , H01L21/76838 , H01L28/60
摘要： The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a metallization layer and in particular to MIM capacitors for Cu BEOL semiconductor devices.
摘要翻译： 本发明一般涉及形成在位于金属化层内的沟槽内的金属 - 绝缘体 - 金属（MIM）电容器，特别是涉及用于Cu BEOL半导体器件的MIM电容器的集成电路，特别是但不限于此。
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公开(公告)号：US20060170024A1
公开(公告)日：2006-08-03
申请号：US10905973
申请日：2005-01-28
IPC分类号： H01L29/94 , H01L27/108 , H01L29/00
CPC分类号： H01L28/55 , H01L21/76838 , H01L28/60
摘要： The present invention relates generally to integrated circuits, and particularly, but not by way of limitation, metal-insulator-metal (MIM) capacitors formed within a trench located within a metallization layer and in particular to MIM capacitors for Cu BEOL semiconductor devices.
摘要翻译： 本发明一般涉及形成在位于金属化层内的沟槽内的金属 - 绝缘体 - 金属（MIM）电容器，特别是涉及用于Cu BEOL半导体器件的MIM电容器的集成电路，特别是但不限于此。
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