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21.发明申请Method And System For A Silicon-Based Optical Phase Modulator With High Modal Overlap 审中-公开一种具有高模态重叠的硅基光相位调制器的方法和系统公开(公告)号：US20150381283A1
公开(公告)日：2015-12-31
申请号：US14752696
申请日：2015-06-26
Applicant: Luxtera, Inc.
Inventor： Subal Sahni , Kam-Yan Hon , Attila Mekis , Gianlorenzo Masini , Lieven Verslegers
IPC: H04B10/548 , H04B10/2581 , H04B10/50
CPC classification number: H04B10/548 , G02F1/025
Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
Abstract translation: 公开了具有高模态重叠的硅基光学相位调制器的方法和系统，并且可以包括在具有肋波导的光学调制器中，其中十字形耗尽区域分离四个交替掺杂的部分：在一端接收光信号 的光调制器，通过施加调制电压来调制所接收的光信号，并将调制的光信号从调制器的相对端传送出去。 调制器可以在可以在互补金属氧化物半导体（CMOS）裸片中的硅光子学上集成电路中。 光学模式可以在十字形耗尽区域的中心。 四个交替掺杂的部分可以包括：浅深度p区域，浅深度n区域，深p区域和深n区域。 浅深度p区域可以沿着调制器的长度周期性地电耦合到深p区域。
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22.发明申请公开(公告)号：US20150316793A1
公开(公告)日：2015-11-05
申请号：US14105527
申请日：2013-12-13
Applicant: Luxtera Inc.
Inventor： Ali Ayazi , Gianlorenzo Masini , Subal Sahni , Attila Mekis , Thierry Pinguet
CPC classification number: G02F1/025 , G02F1/2257 , G02F2001/212 , G02F2201/06 , G02F2202/105
Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.
Abstract translation: 公开了一种用于低寄生硅高速相位调制器的方法和系统，并且可以包括制造包括形成在硅层中的PN结波导的光相位调制器，其中硅层可以在氧化物层上，氧化物层 可以在硅衬底上。 PN结波导可以在PN结波导的长度的相对侧上具有p掺杂区域和n掺杂区域，并且p掺杂区域和n掺杂区域的部分可以被去除。 可以在p掺杂区域和n掺杂区域的剩余部分上形成接触。 可以围绕PN结波导对称地去除部分p掺杂区域和n掺杂区域。 可以沿着PN结波导的长度以交错的方式去除部分p掺杂区域和n掺杂区域。 蚀刻跃迁特征可以沿着p掺杂区域和n掺杂区域去除。
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公开(公告)号：US11049851B2
公开(公告)日：2021-06-29
申请号：US16001135
申请日：2018-06-06
Applicant: Luxtera, Inc.
Inventor： Kam-Yan Hon , Subal Sahni , Gianlorenzo Masini , Attila Mekis
Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.
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24.发明申请公开(公告)号：US20200162166A1
公开(公告)日：2020-05-21
申请号：US16518916
申请日：2019-07-22
Applicant: Luxtera, Inc.
Inventor： Subal Sahni , Kam-Yan Hon , Attila Mekis , Gianlorenzo Masini , Lieven Verslegers
IPC: H04B10/548 , G02F1/025
Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
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公开(公告)号：US10523337B2
公开(公告)日：2019-12-31
申请号：US16353591
申请日：2019-03-14
Applicant: Luxtera, Inc.
Inventor： Peter De Dobbelaere , Attila Mekis , Gianlorenzo Masini
Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an optical communication system including a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20190238228A1
公开(公告)日：2019-08-01
申请号：US16378119
申请日：2019-04-08
Applicant: Luxtera, Inc.
Inventor： Attila Mekis , Peter DeDobbelaere , Kosei Yokoyama , Sherif Abdalla , Steffen Gloeckner , John Guckenberger , Thierry Pinguet , Gianlorenzo Masini , Daniel Kucharski
IPC: H04B10/2575 , H01L27/12 , H04B10/40 , H01L21/84
CPC classification number: H04B10/2575 , H01L21/84 , H01L25/0652 , H01L25/167 , H01L27/0688 , H01L27/1203 , H01L2225/06541 , H04B10/40
Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses. The devices may be fabricated on semiconductor-on-insulator (SOI) wafers utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.
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公开(公告)号：US20190113687A1
公开(公告)日：2019-04-18
申请号：US16159174
申请日：2018-10-12
Applicant: Luxtera, Inc.
Inventor： Shawn Wang , Subal Sahni , Gianlorenzo Masini
Abstract: Near normal incidence MUX/DEMUX designs may include an optical demultiplexer coupled to a photonics die, where the optical demultiplexer comprises an input fiber, thin film filters at a first surface of a substrate, a first mirror at the first surface of the substrate, and a second mirror at a second surface of the substrate. The optical demultiplexer may receive an input optical signal comprising a plurality of wavelength optical signals, reflect the input optical signal from the first mirror to the second mirror, reflect the input optical signal from the second mirror to a first of the thin film filters, communicate an optical signal at a first wavelength to the photonics die while reflecting others to the second mirror, reflect the other signals to a second of the plurality of thin film filters, and communicate an optical signal at a second wavelength to the photonics die.
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公开(公告)号：US10243674B2
公开(公告)日：2019-03-26
申请号：US15977835
申请日：2018-05-11
Applicant: Luxtera, Inc.
Inventor： Brian Welch , Gianlorenzo Masini
Abstract: Methods and systems for a distributed optoelectronic receiver are disclosed and may include an optoelectronic receiver having a grating coupler, a splitter, a plurality of photodiodes, and a plurality of transimpedance amplifiers (TIAs). The receiver receives a modulated optical signal utilizing the grating coupler, splits the received signal into a plurality of optical signals, generates a plurality of electrical signals from the plurality of optical signals utilizing the plurality of photodiodes, communicates the plurality of electrical signals to the plurality of TIAs, amplifies the plurality of electrical signals utilizing the plurality of TIAs, and generates an output electrical signal from coupled outputs of the plurality of TIAs. Each TIA may be configured to amplify signals in a different frequency range. One of the plurality of electrical signals may be DC coupled to a low frequency TIA of the plurality of TIAs.
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公开(公告)号：US20180358342A1
公开(公告)日：2018-12-13
申请号：US16001135
申请日：2018-06-06
Applicant: Luxtera, Inc.
Inventor： Kam-Yan Hon , Subal Sahni , Gianlorenzo Masini , Attila Mekis
CPC classification number: H01L25/167 , G02B6/0006 , G02B6/12004 , G02B6/12007 , G02B2006/12111 , G02B2006/12126
Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.
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30.发明授权公开(公告)号：US09541775B2
公开(公告)日：2017-01-10
申请号：US14217743
申请日：2014-03-18
Applicant: Luxtera, Inc.
Inventor： Ali Ayazi , Kam-Yan Hon , Gianlorenzo Masini
CPC classification number: G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2001/212 , H04B10/501
Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.
Abstract translation: 用于低电压集成硅高速调制器的方法和系统可以包括包括第一和第二光波导和两个光学移相器的光调制器，其中两个光学移相器中的每一个可以包括具有水平截面的pn结和 垂直截面和光信号被传送到第一光波导。 然后光信号的一部分可以耦合到第二光波导。 可以使用光学移相器来调制波导中的至少一个光信号的相位。 相位调制光信号的一部分可以耦合在两个波导之间，由此产生来自调制器的两个输出信号。 调制信号可以被施加到可以包括反向偏置的移相器。
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