公开(公告)号：US11063151B2

公开(公告)日：2021-07-13

申请号：US16481028

申请日：2017-03-30

申请人： Intel Corporation

发明人： Jeffrey S. Leib ,  Daniel B. Bergstrom ,  Christopher J. Wiegand

IPC分类号： H01L23/532 ,  H01L29/78 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L21/285 ,  H01L21/8234

摘要： Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.

公开(公告)号：US20190088538A1

公开(公告)日：2019-03-21

申请号：US16081713

申请日：2016-03-31

申请人： Intel Corporation

发明人： Daniel J. Zierath ,  Jason A. Farmer ,  Daniel B. Bergstrom

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/34 ,  C23C16/455

摘要： In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

公开(公告)号：US10096513B2

公开(公告)日：2018-10-09

申请号：US15619283

申请日：2017-06-09

申请人： Intel Corporation

发明人： Jason A. Farmer ,  Jeffrey S. Leib ,  Daniel B. Bergstrom

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L21/28 ,  H01L23/532 ,  H01L23/528 ,  H01L21/285 ,  H01L29/51

摘要： An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.

公开(公告)号：US20180047825A1

公开(公告)日：2018-02-15

申请号：US15726609

申请日：2017-10-06

申请人： Intel Corporation

发明人： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L23/522 ,  C23C14/06 ,  H01L29/78

CPC分类号： H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

摘要： The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

公开(公告)号：US09711399B2

公开(公告)日：2017-07-18

申请号：US15100531

申请日：2013-12-26

申请人： Intel Corporation

发明人： Jason A. Farmer ,  Jeffrey S. Leib ,  Daniel B. Bergstrom

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/28 ,  H01L23/528 ,  H01L23/532 ,  H01L29/51 ,  H01L21/285

CPC分类号： H01L21/76856 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76867 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/517

摘要： An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.