公开(公告)号：US10777421B2

公开(公告)日：2020-09-15

申请号：US15706992

申请日：2017-09-18

Applicant: Intel Corporation

Inventor： Jason A. Farmer ,  Gopinath Trichy ,  Justin S. Sandford ,  Daniel B. Bergstrom

IPC: H01L21/311 ,  H01L21/3065 ,  H01L29/06 ,  H01L21/762 ,  H01L29/66 ,  H01L21/324 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. Microelectronic devices including first and second fins that are laterally offset by a fin pitch to define a first field there between are also described. In embodiments the microelectronic devices include a conformal oxide layer and a conformal nitride layer on at least a portion of the first and second fins, where the conformal nitride layer is on at least a portion of the conformal oxide layer and a sacrificial oxide material is disposed within the first field.

公开(公告)号：US10651082B2

公开(公告)日：2020-05-12

申请号：US16081713

申请日：2016-03-31

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Jason A. Farmer ,  Daniel B. Bergstrom

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/34 ,  C23C16/455 ,  H01L21/285

Abstract: In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

公开(公告)号：US20180005841A1

公开(公告)日：2018-01-04

申请号：US15706992

申请日：2017-09-18

Applicant: Intel Corporation

Inventor： Jason A. Farmer ,  Gopinath Trichy ,  Justin S. Sandford ,  Daniel B. Bergstrom

IPC: H01L21/311 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/324 ,  H01L29/78 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

Abstract: Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.

公开(公告)号：US20190088538A1

公开(公告)日：2019-03-21

申请号：US16081713

申请日：2016-03-31

Applicant: Intel Corporation

Inventor： Daniel J. Zierath ,  Jason A. Farmer ,  Daniel B. Bergstrom

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/34 ,  C23C16/455

Abstract: In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.

公开(公告)号：US10096513B2

公开(公告)日：2018-10-09

申请号：US15619283

申请日：2017-06-09

Applicant: Intel Corporation

Inventor： Jason A. Farmer ,  Jeffrey S. Leib ,  Daniel B. Bergstrom

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/28 ,  H01L23/532 ,  H01L23/528 ,  H01L21/285 ,  H01L29/51

Abstract: An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.

公开(公告)号：US09711399B2

公开(公告)日：2017-07-18

申请号：US15100531

申请日：2013-12-26

Applicant: Intel Corporation

Inventor： Jason A. Farmer ,  Jeffrey S. Leib ,  Daniel B. Bergstrom

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/28 ,  H01L23/528 ,  H01L23/532 ,  H01L29/51 ,  H01L21/285

CPC classification number: H01L21/76856 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76867 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/517

Abstract: An aspect of the present disclosure relates to a method of forming a barrier layer on a semiconductor device. The method includes placing a substrate into a reaction chamber and depositing a barrier layer over the substrate. The barrier layer includes a metal and a non-metal and the barrier layer exhibits an as-deposited thickness of 4 nm or less. The method further includes densifying the barrier layer by forming plasma from a gas proximate to said barrier layer and reducing the thickness and increasing the density of the barrier layer. In embodiments, during densification 300 Watts or less of power is applied to the plasma at a frequency of 350 kHz to 40 MHz.