公开(公告)号：US09396996B2

公开(公告)日：2016-07-19

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/768 ,  H01L21/467 ,  H01L23/52 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US20150380307A1

公开(公告)日：2015-12-31

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US09209039B2

公开(公告)日：2015-12-08

申请号：US14312945

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Kaveri Jain ,  Anton J. deVilliers

IPC: H01L21/308 ,  G03F7/20

CPC classification number: H01L21/3086 ,  G03F7/2022 ,  Y10T428/24802

Abstract: A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.

Abstract translation: 在基板中形成反转图案的方法。 衬底上的抗蚀剂被曝光和显影以在其中形成图案，图案化抗蚀剂具有第一极性。 图案化抗蚀剂的极性反转到第二极性，并且在具有第二极性的图案化抗蚀剂上形成反转膜。 去除具有第二极性的图案化抗蚀剂，在反转膜中形成图案。 然后将反转膜中的图案转移到基底。 公开了在衬底中形成反向图案的附加方法，以及在该方法期间形成的半导体结构。

公开(公告)号：US20140370684A1

公开(公告)日：2014-12-18

申请号：US13918065

申请日：2013-06-14

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Michael Hyatt ,  Scott L. Light ,  Kevin J. Torek ,  Anton J. deVilliers

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  G03F7/095 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L28/90

Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.

Abstract translation: 在半导体器件结构中形成半导体器件和特征的方法包括进行防间隔工艺以去除第一掩模材料的部分以形成沿第一方向延伸的第一开口。 进行另一个防间隔处理以去除第一掩模材料的部分，以形成沿与第一方向成角度的第二方向延伸的第二开口。 去除在第一开口和第二开口的交叉点处的第一掩模材料下面的第二掩模材料的部分，以在第二掩模材料中形成孔并暴露第二掩模材料下面的衬底。