公开(公告)号：US20160048074A1

公开(公告)日：2016-02-18

申请号：US14928159

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC: G03F7/00 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

Abstract translation: 在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分 第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。 附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成 在衬底上的第二抗蚀剂材料。 第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

公开(公告)号：US20130323924A1

公开(公告)日：2013-12-05

申请号：US13963096

申请日：2013-08-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Anton DeVilliers ,  Michael Hyatt

IPC: G03F7/20 ,  H01L21/768

CPC classification number: G03F7/2022 ,  G03F7/70466 ,  H01L21/76814

Abstract: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

Abstract translation: 公开了在材料中形成图案的方法和在待图案化的材料中形成开口的方法，例如包括将第一材料的第一部分暴露于通过布置在第一材料上的掩模的至少两个孔的辐射的方法 移动所述掩模使得所述至少两个孔与所述第一材料的所述第一部分的一部分重叠，以及将所述第一材料的第二部分暴露于通过所述至少两个孔的辐射。 第一部分和第二部分将以这样的方式重叠，使得第一材料的未暴露部分布置在第一部分和第二部分之间。 然后可以去除第一材料的未曝光或暴露部分。 剩余的第一材料可以用作光致抗蚀剂掩模以在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US09465287B2

公开(公告)日：2016-10-11

申请号：US14928159

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  G03F7/095 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

公开(公告)号：US20140205952A1

公开(公告)日：2014-07-24

申请号：US13746543

申请日：2013-01-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Scott Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC: G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

Abstract translation: 在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分 第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。 附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成 在衬底上的第二抗蚀剂材料。 第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

公开(公告)号：US20130252142A1

公开(公告)日：2013-09-26

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/38

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US09583381B2

公开(公告)日：2017-02-28

申请号：US13918065

申请日：2013-06-14

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Michael Hyatt ,  Scott L. Light ,  Kevin J. Torek ,  Anton J. deVilliers

IPC: H01L21/311 ,  H01L21/312 ,  H01L21/32 ,  G03F7/26 ,  H01L21/768 ,  H01L21/027 ,  H01L21/033 ,  G03F7/095 ,  G03F7/00 ,  H01L49/02

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  G03F7/095 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L28/90

Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.

Abstract translation: 在半导体器件结构中形成半导体器件和特征的方法包括进行防间隔工艺以去除第一掩模材料的部分以形成沿第一方向延伸的第一开口。 进行另一个防间隔处理以去除第一掩模材料的部分，以形成沿与第一方向成角度的第二方向延伸的第二开口。 去除在第一开口和第二开口的交叉点处的第一掩模材料下面的第二掩模材料的部分，以在第二掩模材料中形成孔并暴露第二掩模材料下面的衬底。

公开(公告)号：US09140977B2

公开(公告)日：2015-09-22

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/36 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US08685630B2

公开(公告)日：2014-04-01

申请号：US13963096

申请日：2013-08-09

Applicant: Micron Technology, Inc.

Inventor： Anton DeVilliers ,  Michael Hyatt

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/70466 ,  H01L21/76814

Abstract: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

Abstract translation: 公开了在材料中形成图案的方法和在待图案化的材料中形成开口的方法，例如包括将第一材料的第一部分暴露于通过布置在第一材料上的掩模的至少两个孔的辐射的方法 移动所述掩模使得所述至少两个孔与所述第一材料的所述第一部分的一部分重叠，以及将所述第一材料的第二部分暴露于通过所述至少两个孔的辐射。 第一部分和第二部分将以这样的方式重叠，使得第一材料的未暴露部分布置在第一部分和第二部分之间。 然后可以去除第一材料的未曝光或暴露部分。 剩余的第一材料可以用作光致抗蚀剂掩模以在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US20140370684A1

公开(公告)日：2014-12-18

申请号：US13918065

申请日：2013-06-14

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Michael Hyatt ,  Scott L. Light ,  Kevin J. Torek ,  Anton J. deVilliers

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  G03F7/095 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L28/90

Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.

Abstract translation: 在半导体器件结构中形成半导体器件和特征的方法包括进行防间隔工艺以去除第一掩模材料的部分以形成沿第一方向延伸的第一开口。 进行另一个防间隔处理以去除第一掩模材料的部分，以形成沿与第一方向成角度的第二方向延伸的第二开口。 去除在第一开口和第二开口的交叉点处的第一掩模材料下面的第二掩模材料的部分，以在第二掩模材料中形成孔并暴露第二掩模材料下面的衬底。

公开(公告)号：US08815497B2

公开(公告)日：2014-08-26

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVillers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

IPC: G03F7/26

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。