公开(公告)号：US09274272B2

公开(公告)日：2016-03-01

申请号：US14176736

申请日：2014-02-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade

IPC: G02B6/10 ,  G02B6/12 ,  G02B6/13 ,  B82Y20/00 ,  G02B6/122

CPC classification number: G02B6/12 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/1225 ,  G02B6/13 ,  G02B2006/121 ,  H01L2933/0083

Abstract: A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.

Abstract translation: 描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。 该区域由内芯和外包层中的孔形成。 孔可以填充提供光子晶体的材料。 因此，光子器件可以用作波导和光子晶体。

公开(公告)号：US20150192737A1

公开(公告)日：2015-07-09

申请号：US14662524

申请日：2015-03-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade

IPC: G02B6/122

CPC classification number: G02B6/1225 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12097 ,  H01L21/308

Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.

Abstract translation: 公开的方法和装置实施例提供了一种具有与支撑衬底的光隔离的光子器件。 在光子器件的元件的下方提供横截面的大致矩形的空腔，并且元件可以由在空腔上的支撑衬底的凸缘形成。

公开(公告)号：US20140369107A1

公开(公告)日：2014-12-18

申请号：US14471569

申请日：2014-08-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Chandra Mouli ,  Roy Meade

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/06 ,  G11C13/0097 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap.

Abstract translation: 存储单元及其形成方法以及包括其的装置。 存储单元具有第一和第二电极。 能够进行电子开关并具有第一带隙的非晶半导体材料位于第一和第二电极之间。 材料与半导体材料接触并具有第二带隙，第二带隙大于第一带隙。

公开(公告)号：US20140241682A1

公开(公告)日：2014-08-28

申请号：US13776836

申请日：2013-02-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade

IPC: H01L21/308 ,  G02B6/02

CPC classification number: G02B6/1225 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12097 ,  H01L21/308

Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.

Abstract translation: 公开的方法和设备实施例提供了一种具有与支撑衬底的光学隔离的光子器件。 在光子器件的元件的下方提供横截面的大致矩形的空腔，并且元件可以由在空腔上的支撑衬底的凸缘形成。

公开(公告)号：US20220231178A1

公开(公告)日：2022-07-21

申请号：US17711728

申请日：2022-04-01

Applicant: Micron Technology, Inc. ,  Massachusetts Institute of Technology

Inventor： Roy Meade ,  Karan Mehta ,  Efraim Megged ,  Jason Orcutt ,  Milos Popovic ,  Rajeev Ram ,  Jeffrey Shainline ,  Zvi Sternberg ,  Vladimir Stojanovic ,  Ofer Tehar-Zahav

IPC: H01L31/0232 ,  H01L31/0368 ,  H01L27/144 ,  H01L31/18

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

公开(公告)号：US11217737B2

公开(公告)日：2022-01-04

申请号：US16945309

申请日：2020-07-31

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L33/64 ,  G02F1/01 ,  G02F1/313 ,  G02B6/12

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

公开(公告)号：US20210135025A1

公开(公告)日：2021-05-06

申请号：US17145301

申请日：2021-01-09

Applicant: Micron Technology, Inc. ,  Massachusetts Institute of Technology

Inventor： Roy Meade ,  Karan Mehta ,  Efraim Megged ,  Jason Orcutt ,  Milos Popovic ,  Rajeev Ram ,  Jeffrey Shainline ,  Zvi Sternberg ,  Vladimir Stojanovic ,  Ofer Tehar-Zahav

IPC: H01L31/0232 ,  H01L31/0368 ,  H01L27/144 ,  H01L31/18

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

公开(公告)号：US10656354B2

公开(公告)日：2020-05-19

申请号：US15936033

申请日：2018-03-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/30 ,  G02B6/32

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US20180130815A1

公开(公告)日：2018-05-10

申请号：US15867089

申请日：2018-01-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade

IPC: H01L27/11568 ,  H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L21/326 ,  H01L29/788

CPC classification number: H01L27/11568 ,  H01L21/02112 ,  H01L21/02318 ,  H01L21/28176 ,  H01L21/326 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/78 ,  H01L29/7883 ,  H01L29/792

Abstract: Methods for fabricating a transistor include forming a dielectric material adjacent to a semiconductor, introducing non-hydrogenous ions into the dielectric material, and forming a control gate adjacent to the dielectric material. Transistors include source/drain regions in a semiconductor, a dielectric material adjacent to the semiconductor and containing non-hydrogenous ions, and a control gate adjacent to the dielectric material

公开(公告)号：US09537091B2

公开(公告)日：2017-01-03

申请号：US14471569

申请日：2014-08-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Chandra Mouli ,  Roy Meade

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

CPC classification number: H01L45/06 ,  G11C13/0097 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap.

Abstract translation: 存储单元及其形成方法以及包括其的装置。 存储单元具有第一和第二电极。 能够进行电子开关并具有第一带隙的非晶半导体材料位于第一和第二电极之间。 材料与半导体材料接触并具有第二带隙，第二带隙大于第一带隙。