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21.发明申请公开(公告)号：US20190027681A1
公开(公告)日：2019-01-24
申请号：US16143129
申请日：2018-09-26
Applicant: Micron Technology, Inc
Inventor： Gurtej S. Sandhu , Witold Kula
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.
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22.发明申请公开(公告)号：US20180277752A1
公开(公告)日：2018-09-27
申请号：US15986487
申请日：2018-05-22
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10 , H05K999/99
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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公开(公告)号：US09768376B2
公开(公告)日：2017-09-19
申请号：US15181061
申请日：2016-06-13
Applicant: Micron Technology, Inc.
Inventor： Gurtej S. Sandhu , Witold Kula
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.
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公开(公告)号：US09680089B1
公开(公告)日：2017-06-13
申请号：US15154033
申请日：2016-05-13
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US09608197B2
公开(公告)日：2017-03-28
申请号：US14030763
申请日：2013-09-18
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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Patent Agency Ranking
公开(公告)号：US09478735B1
公开(公告)日：2016-10-25
申请号：US14746421
申请日：2015-06-22
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.
Abstract translation: 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁性电极，与第一电极间隔开并包含磁性参考材料的导电第二磁性电极以及第一和第二电极之间的非磁性绝缘体材料。 第一电极的磁记录材料包括在一对非含铱区域之间具有含铱区域的组。 在一些实施方案中，非含铱的区域是含钴区域。
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27.发明授权Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems 有权存储单元，制造方法，半导体器件结构，存储器系统和电子系统公开(公告)号：US09466787B2
公开(公告)日：2016-10-11
申请号：US13948839
申请日：2013-07-23
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
CPC classification number: H01L27/222 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
Abstract translation: 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。
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公开(公告)号：US09373779B1
公开(公告)日：2016-06-21
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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29.发明授权Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems 有权存储单元，操作和制造方法，半导体器件结构和存储器系统公开(公告)号：US09368714B2
公开(公告)日：2016-06-14
申请号：US13932497
申请日：2013-07-01
Applicant: Micron Technology, Inc.
Inventor： Gurtej S. Sandhu , Witold Kula
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
Abstract: A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.
Abstract translation: 磁性电池芯包括靠近磁性区域（例如，自由区域或固定区域）的至少一个应力源结构。 磁性区域可以由表现出磁致伸缩性的磁性材料形成。 在切换期间，应力器结构可能经受通过磁性电池芯的编程电流。 响应于当前的应力结构可能会改变大小。 由于尺寸变化，应力结构可能对磁性区域施加应力，从而改变其磁各向异性。 在一些实施例中，磁性区域的MA强度可能在切换期间降低，从而可以使用较低的编程电流来切换自由区域的磁性取向。 在一些实施例中，多个应激源结构可以包括在磁性细胞芯中。 还公开了制造和操作的方法以及相关的装置结构和系统。
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公开(公告)号：US20160163967A1
公开(公告)日：2016-06-09
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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