Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method
    21.
    发明授权
    Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权
    尺寸测量SEM系统,电路图案形状评估方法和执行该方法的系统

    公开(公告)号:US07449689B2

    公开(公告)日:2008-11-11

    申请号:US11260082

    申请日:2005-10-28

    IPC分类号: G03F1/00 G21K7/00

    摘要: The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.

    摘要翻译: 本发明涉及一种尺寸测量SEM系统和电路图​​案评估系统,其能够实现精确的分钟OPC评估,其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性 评估方法。 将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微小评估,以及表示一维或二维几何特征 计算设计图案和抗蚀剂图案之间的差异。 在某些情况下,由于OPE效应(光学邻近效应),抗蚀剂图案的形状与设计图案有很大的不同。 为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上,曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案,并将模拟图案和图像 抗蚀图案

    Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
    22.
    发明申请
    Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern 有权
    用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置

    公开(公告)号:US20070105243A1

    公开(公告)日:2007-05-10

    申请号:US11592175

    申请日:2006-11-03

    IPC分类号: H01L21/66 H01L23/58

    摘要: In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

    摘要翻译: 在曝光处理或蚀刻处理中,从SEM图像计算出用于估计目标评价图案的截面形状,图案的处理条件或图案的装置特性的图像特征量。 将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状,图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联 图片。 由此,非破坏性地计算目标评价图案的截面形状,图案的处理条件或图案的装置特性。

    TEMPLATE MATCHING PROCESSING DEVICE AND TEMPLATE MATCHING PROCESSING PROGRAM
    25.
    发明申请
    TEMPLATE MATCHING PROCESSING DEVICE AND TEMPLATE MATCHING PROCESSING PROGRAM 有权
    模板匹配处理设备和模板匹配处理程序

    公开(公告)号:US20130114898A1

    公开(公告)日:2013-05-09

    申请号:US13696260

    申请日:2011-03-17

    IPC分类号: G06K9/62

    摘要: The present invention is a template matching processing device capable of evaluating a similarity degree which supports even a case of intensive morphological change between a design image and a photographic image. In the template matching processing device, matching processing between the design image and the photographic image is performed, a partial design image is obtained by clipping a portion having the highest correlation (step 101), and processing for deforming the photographic image in accordance with the clipped design image (steps 102 to 105) is performed, so that correlation between the deformed image obtained and the design image is taken to be set as the similarity degree.

    摘要翻译: 本发明是一种模拟匹配处理装置,其能够评价即使在设计图像和摄影图像之间形成密集的情况的情况下也能够支持的相似度。 在模板匹配处理装置中,进行设计图像与摄影图像之间的匹配处理,通过剪切具有最高相关性的部分(步骤101)获得部分设计图像,以及根据 执行剪辑设计图像(步骤102至105),使得获得的变形图像与设计图像之间的相关性被设置为相似度。

    Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
    27.
    发明授权
    Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern 有权
    用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置

    公开(公告)号:US07816062B2

    公开(公告)日:2010-10-19

    申请号:US11592175

    申请日:2006-11-03

    IPC分类号: G03F9/00 G03C5/00 G21G5/00

    摘要: In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

    摘要翻译: 在曝光处理或蚀刻处理中,从SEM图像计算出用于估计目标评价图案的截面形状,图案的处理条件或图案的装置特性的图像特征量。 将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状,图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联 图片。 由此,非破坏性地计算目标评价图案的截面形状,图案的处理条件或图案的装置特性。

    METHOD AND APPARATUS FOR MONITORING CROSS-SECTIONAL SHAPE OF A PATTERN FORMED ON A SEMICONDUCTOR DEVICE
    29.
    发明申请
    METHOD AND APPARATUS FOR MONITORING CROSS-SECTIONAL SHAPE OF A PATTERN FORMED ON A SEMICONDUCTOR DEVICE 有权
    用于监测形成在半导体器件上的图案的交叉形状的方法和装置

    公开(公告)号:US20070198955A1

    公开(公告)日:2007-08-23

    申请号:US11673065

    申请日:2007-02-09

    IPC分类号: G06T7/60

    摘要: A method is provided for estimating a cross-sectional shape or for monitoring manufacturing process parameters of a semiconductor device pattern to be measured. In this method, in order to enable SEM-based management of the cross-sectional shape or manufacturing process parameters of the pattern to be measured, the association between the cross-sectional shape or process parameters of the pattern and SEM image characteristic quantities effective for estimating the cross-sectional shape or process parameters of the pattern, is saved as learning data, and then the image characteristic quantities that have been calculated from a SEM image of the pattern are collated with the learning data to estimate the cross-sectional shape or to monitor process parameters of the pattern. Estimation with high accuracy and reliability is achievable by calculating all or part of three kinds of reliability (reliability of the image characteristic quantities, reliability of estimation engines, and reliability of estimating results) based on the distribution of the image characteristic quantities and judging from the calculated reliability whether additional learning of the learning data is necessary, or selecting and adjusting image characteristic quantities and estimation engine based on the reliability.

    摘要翻译: 提供了一种用于估计横截面形状或用于监测待测量的半导体器件图案的制造工艺参数的方法。 在该方法中,为了能够对待测图案的截面形状或制造工艺参数进行基于SEM的管理,图案的截面形状或工艺参数与SEM图像特征量之间的关联对于 估计图案的截面形状或处理参数被保存为学习数据,然后将从图案的SEM图像计算出的图像特征量与学习数据进行对照以估计横截面形状或 监视模式的进程参数。 基于图像特征量的分布,通过计算三种可靠性(图像特征量的可靠性,估计引擎的可靠性,估计引擎的可靠性和估计结果的可靠性),可以实现高精度和可靠性的估计。 计算的可靠性是否需要学习数据的附加学习,或者基于可靠性来选择和调整图像特征量和估计引擎。

    Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method
    30.
    发明申请
    Dimension measuring SEM system, method of evaluating shape of circuit pattern and a system for carrying out the method 有权
    尺寸测量SEM系统,电路图案形状评估方法和执行该方法的系统

    公开(公告)号:US20060108524A1

    公开(公告)日:2006-05-25

    申请号:US11260082

    申请日:2005-10-28

    IPC分类号: G21K7/00

    摘要: The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.

    摘要翻译: 本发明涉及一种尺寸测量SEM系统和电路图​​案评估系统,其能够实现精确的分钟OPC评估,其随着半导体器件的电路图案的设计图案的逐渐小型化以及电路图案的增加而增加的重要性 评估方法。 将通过光刻形成的抗蚀剂图案的图像上的设计数据和测量数据叠加以便对由设计数据定义的设计图案与抗蚀剂图案的图像之间的差异进行微分评估,以及表示一维或二维几何特征 计算设计图案和抗蚀剂图案之间的差异。 在某些情况下,由于OPE效应(光学邻近效应),抗蚀剂图案的形状与设计图案有很大的不同。 为了稳定准确地将设计数据和测量数据叠加在抗蚀剂图案上,曝光模拟器基于用于曝光处理和曝光条件的光掩模上的光掩模数据计算模拟图案,并将模拟图案和图像 抗蚀图案