公开(公告)号：US20060006514A1

公开(公告)日：2006-01-12

申请号：US10886970

申请日：2004-07-07

Applicant: Manish Sharma ,  Robert Walmsley

Inventor： Manish Sharma ,  Robert Walmsley

IPC: H01L23/06

CPC classification number: B81B7/0006 ,  B81B2201/014

Abstract: A semiconductor device comprises a plurality of integrated circuits and at least one MEMS device interconnecting the integrated circuits for signal transmission between the circuits.

Abstract translation: 半导体器件包括多个集成电路和至少一个MEMS器件，其互连用于电路之间的信号传输的集成电路。

公开(公告)号：US20050174836A1

公开(公告)日：2005-08-11

申请号：US10775807

申请日：2004-02-11

Applicant: Manish Sharma ,  Janice Nickel

Inventor： Manish Sharma ,  Janice Nickel

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/15

Abstract: This invention provides a multilayer pinned reference layer for a magnetic device. In a particular embodiment a magnetic tunnel junction cell is provided. Each magnetic memory tunnel junction cell provides at least one ferromagnetic data or sense layer, an intermediate layer in contact with the data layer, and a multilayer pinned ferromagnetic reference layer. The multilayer pinned reference layer is in contact with the intermediate layer, opposite from the data layer. The multilayer pinned reference layer is characterized by at least one first layer of ferromagnetic material and at least one second layer of ferromagnetic material in physical contact with the first layer and magnetically coupled to the first layer. The first and second layer self seed to provide a crystal texture used in establishing the pinning magnetic field of the reference layer.

Abstract translation: 本发明提供一种用于磁性装置的多层固定参考层。 在特定实施例中，提供了磁性隧道结电池。 每个磁存储器隧道结单元提供至少一个铁磁数据或感测层，与数据层接触的中间层和多层被钉扎的铁磁参考层。 多层固定参考层与数据层相反的中间层接触。 多层固定参考层的特征在于至少一个铁磁材料的第一层和至少一个第二层铁磁材料，与第一层物理接触并与第一层磁耦合。 第一和第二层自种子提供用于建立参考层的钉扎磁场的<111>晶体结构。

公开(公告)号：US20050174828A1

公开(公告)日：2005-08-11

申请号：US10776061

申请日：2004-02-11

Applicant: Manish Sharma

Inventor： Manish Sharma

IPC: G11C11/08 ,  G11C11/14 ,  G11C11/15

CPC classification number: G11C11/15

Abstract: A magnetic random access memory (MRAM) that includes an array of magnetic memory cells and a plurality of word and bit lines connecting columns and rows of the memory cells so that the memory cells are positioned at cross-points of the word and bit lines. Each memory cell has a magnetic reference layer and a magnetic data layer. Each magnetic reference layer and each magnetic data layer has a magnetization that is switchable between two states under the influence of a magnetic field and each reference layer has at a first temperature a coercivity that is lower than that of each data layer at the first temperature. The MRAM also includes a plurality of heating elements each proximate to a respective data layer. Each heating element provides in use for localized heating of the respective data layer to reduce the coercivity of the data layer so as to facilitate switching of the data layer.

Abstract translation: 磁性随机存取存储器（MRAM），其包括磁存储器单元阵列和连接存储器单元的列和行的多个字和位线，使得存储器单元位于字和位线的交叉点处。 每个存储单元具有磁性参考层和磁性数据层。 每个磁参考层和每个磁数据层具有在磁场影响下在两个状态之间切换的磁化，并且每个参考层在第一温度下具有低于第一温度下每个数据层的矫顽力的矫顽力。 MRAM还包括各自靠近相应数据层的多个加热元件。 每个加热元件用于各个数据层的局部加热，以降低数据层的矫顽力，从而便于切换数据层。

公开(公告)号：US20050148196A1

公开(公告)日：2005-07-07

申请号：US10746170

申请日：2003-12-26

Applicant: Manish Sharma ,  Thomas Anthony ,  Hoon Lee

Inventor： Manish Sharma ,  Thomas Anthony ,  Hoon Lee

IPC: H01L21/302 ,  H01L21/461 ,  H01L43/12

CPC classification number: H01L43/12

Abstract: An aspect of the present invention is a method of patterning material in a thin-film device. The method includes forming a liftoff stencil, depositing a first layer of material through the liftoff stencil, depositing a second layer of material through the liftoff stencil, removing at least a portion of the liftoff stencil and performing a directional etch on the first and second layer of material.

Abstract translation: 本发明的一个方面是在薄膜器件中图案化材料的方法。 该方法包括形成剥离模板，将第一层材料沉积通过剥离模板，通过剥离模板沉积第二材料层，去除剥离模板的至少一部分并在第一层和第二层上执行定向蚀刻 的材料。

公开(公告)号：US20050146428A1

公开(公告)日：2005-07-07

申请号：US11069641

申请日：2005-02-28

Applicant: Brian Mahoney ,  Steven Colvin ,  Manish Sharma

Inventor： Brian Mahoney ,  Steven Colvin ,  Manish Sharma

IPC: G06Q10/08 ,  G08B19/00

CPC classification number: G06Q10/08 ,  G08G1/20

Abstract: A method of providing information from a plurality of fleet machines located at a plurality of locations for purposes of permitting a manager of fleet equipment to make management decisions pertaining to a fleet comprised of such equipment, monitoring functional operational data from individual machines in a fleet of machines, conveying the monitored data to a remote server, converting the monitored data into a first group pertaining to current existing operational data, and into a second group comprised of past historical data, and transmitting by wirelss means to a person having responsibility for the fleet information at least one of the groups of data.

Abstract translation: 为了允许车队设备的管理者做出与由这样的设备组成的车队有关的管理决定，从位于多个位置的多个车队机器提供信息的方法，监视来自各机组中的各个机器的功能操作数据 将监视的数据传送到远程服务器，将监视的数据转换为与当前现有操作数据相关的第一组，并将其转换成由过去的历史数据组成的第二组，并通过线缆装置传送给负责车队的人 信息数据组中的至少一个。

公开(公告)号：US06897158B2

公开(公告)日：2005-05-24

申请号：US10668148

申请日：2003-09-22

Applicant: Manish Sharma

Inventor： Manish Sharma

IPC: G02F1/1337 ,  H01L21/302 ,  H10L21/461

CPC classification number: G02F1/13378 ,  B81B2203/0361 ,  B81C1/00626 ,  B81C99/009

Abstract: This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.

公开(公告)号：US06891746B2

公开(公告)日：2005-05-10

申请号：US10351013

申请日：2003-01-25

Applicant: Lung T. Tran ,  Manish Sharma

Inventor： Lung T. Tran ,  Manish Sharma

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/14

CPC classification number: G11C11/16

Abstract: A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.

Abstract translation: 磁阻装置包括具有不同矫顽力的第一和第二铁磁层以及第一和第二层之间的间隔层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。

公开(公告)号：US20050083728A1

公开(公告)日：2005-04-21

申请号：US10690372

申请日：2003-10-21

Applicant: Manish Sharma

Inventor： Manish Sharma

IPC: G06F3/041 ,  G06F3/03 ,  G06F3/033 ,  G06F3/046 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: G06F3/046 ,  G11C11/16

Abstract: This invention provides a soft-reference magnetic memory digitizing device. In a particular embodiment the digitizing device includes an array of soft-reference magnetic memory cells. Each memory cell has at least one ferromagnetic sense layer characterized by an alterable orientation of magnetization, the orientation changing upon the substantially proximate application of at east one externally-applied magnetic field as may be provided by a magnetically tipped stylus. Each memory cell also provides at least one ferromagnetic soft-reference layer having a non-pinned orientation of magnetization. An intermediate layer forming a magnetic tunnel junction is placed between the sense layer and soft-reference layer. The orientation of the sense layer is not substantially affected by the soft-reference layer. A related method of use involving a magnetic stylus is also provided.

Abstract translation: 本发明提供一种软参考磁存储数字化装置。 在特定实施例中，数字化装置包括软参考磁存储单元的阵列。 每个存储器单元具有至少一个铁磁感应层，其特征在于磁化方向的可变方向，该方向在基本上接近施加在东侧一个外部施加的磁场上可能由磁性尖头的触笔提供。 每个存储单元还提供至少一个铁磁软参考层，其具有非固定取向的磁化。 形成磁性隧道结的中间层被放置在感测层和软参考层之间。 感测层的取向基本上不受软参考层的影响。 还提供了涉及磁性笔的相关使用方法。

公开(公告)号：US06803274B2

公开(公告)日：2004-10-12

申请号：US10233109

申请日：2002-08-30

Applicant: Manish Sharma ,  Lung Tran

Inventor： Manish Sharma ,  Lung Tran

IPC: H01L21336

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

Abstract translation: 示例性非易失性存储器阵列包括衬底和形成在衬底上的多个存储器单元，每个存储器单元可在操作期间通过至少第一和第二导体寻址。 示例性存储器阵列中的示例性存储器单元包括具有开口的铁磁环形数据层，该开口使得第二导体能够电接触第一导体，环形数据层的至少一部分上的中间层和软参考 层在中间层的至少一部分上。

公开(公告)号：US06795281B2

公开(公告)日：2004-09-21

申请号：US09963933

申请日：2001-09-25

Applicant: Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

Inventor： Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

IPC: H01L2984

CPC classification number: B82Y25/00 ,  G11C11/16 ,  H01F10/3277

Abstract: A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.

Abstract translation: 存储器件包括具有可以在第一和第二方向上定向的磁化的数据层; 和合成亚铁磁参考层。 数据和参考层具有不同的矫顽力。