摘要:
A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.
摘要:
A method generates a sampling clock signal in a communication block of a memory device having a plurality of communication blocks which are distributed in the memory device. The method includes receiving an input clock signal in the communication block, generating, only in response to the input clock signal, a local clock signal having a predetermined phase relationship with respect to the input clock signal, and generating the sampling clock signal based on the local clock signal.
摘要:
A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.
摘要:
A high-speed interface circuit is implemented in a semiconductor memory chip including a memory core, a first interface circuit section, and a second interface circuit section. The first interface circuit section is connectable to a write data-/command and address signal bus, includes a write data-/command and address re-driver/transmitter path (which may be transparent) and does not include any clock signal synchronizing circuitry, and a main write signal path including a serial-to-parallel converting and synchronizing device to synchronize with a reference clock signal received write data-/command and address signals and delivering the parallel converted write signals to the memory core. The second interface circuit section is connectable to a read data bus and includes a transparent read data re-driver/transmitter path for transmitting and re-driving received serial read data to a succeeding semiconductor memory chip and a main read signal path for inserting the parallel-to-serial converted read data from the memory core into the received serial read data stream, synchronizing the parallel-to-serial converted read data with the reference clock signal and providing the serialized read data stream to a serial read data input terminal of a corresponding second interface circuit section of a succeeding same memory chip or to a memory controller.
摘要:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
摘要:
A system including a central processing unit, a first memory channel being configured to couple the central processing unit to a first semiconductor memory unit, wherein the first memory channel is configured to be clocked with a first clock frequency, and a second memory channel being configured to couple the central processing unit to a second semiconductor memory unit, wherein the second memory channel is configured or configurable to be clocked with a second clock frequency smaller than the first clock frequency.
摘要:
In an embodiment, a memory device comprises a clock generating unit being configured to generate a read clock signal, the clock generating unit being connected to a first clock signal contact configured to send the read clock signal, and the clock generating unit being connected to data signal contacts being configured to send data signals, the memory device being configured to send the data signals in a phase and frequency accurate (source synchronous) manner with regard to the read clock signal.
摘要:
A method of training connections in a memory arrangement includes training a connection between a memory section and a receiver portion of a controller for controlling the memory arrangement before or simultaneously with a training of essentially all other connections between elements of the memory arrangement that are to be trained.
摘要:
Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.
摘要:
Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.