MAGNETIC RECORDING MEDIUM AND METHOD OF FABRICATING THE SAME
    21.
    发明申请
    MAGNETIC RECORDING MEDIUM AND METHOD OF FABRICATING THE SAME 审中-公开
    磁记录介质及其制造方法

    公开(公告)号:US20090252992A1

    公开(公告)日:2009-10-08

    申请号:US12488188

    申请日:2009-06-19

    IPC分类号: G11B5/71 B05D5/12

    CPC分类号: G11B5/725 G11B5/8408

    摘要: A magnetic recording medium has a recording layer, a protection layer and a lubricant layer that are stacked above a substrate. The lubricant layer includes a bond layer in contact with the protection layer, and a mobile layer at a surface of the magnetic recording medium and having a bonding strength weaker than that of the bond layer with respect to the protection layer. A height of convex portions at a surface portion of the mobile layer is approximately 0.3 nm or less.

    摘要翻译: 磁记录介质具有层叠在基板上方的记录层,保护层和润滑剂层。 润滑剂层包括与保护层接触的接合层和在磁记录介质的表面处的移动层,并且其粘合强度弱于接合层相对于保护层的粘合强度。 移动层的表面部分的凸部的高度约为0.3nm以下。

    SEMICONDUCTOR LASER DEVICE
    22.
    发明申请
    SEMICONDUCTOR LASER DEVICE 失效
    半导体激光器件

    公开(公告)号:US20080205467A1

    公开(公告)日:2008-08-28

    申请号:US12035959

    申请日:2008-02-22

    IPC分类号: H01S5/22

    摘要: A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface.

    摘要翻译: 半导体激光器件包括:第一导电类型的衬底; 设置在所述基板上并且至少包括有源层和包层的氮化物半导体层叠体,所述包层为第二导电型并具有脊形波导; 设置在由所述层叠体构成的光谐振器的一个端面的第一膜,所述第一膜的反射率为40%以上且60%以下; 以及设置在所述光谐振器的另一端面上并且具有比所述第一膜高的反射率的第二膜。 光谐振器的长度为400μm以下。 一端面用作发光面。

    Polarizing element and optical system including polarizing element
    24.
    发明申请
    Polarizing element and optical system including polarizing element 有权
    极化元件和偏光元件的光学系统

    公开(公告)号:US20060279841A1

    公开(公告)日:2006-12-14

    申请号:US10574833

    申请日:2004-10-05

    IPC分类号: G02B5/30

    摘要: A polarizing element usable for two wavelengths in a predetermined wavelength region and having a simple structure. The polarizing element has a two-layer structure in which a grid pattern of a constant period Λ having a triangular cross-section is formed on a substrate and a film with a refractive index higher than that of the substrate is deposited on the grid pattern. When first and second wavelengths λ1, λ2 satisfy λ1

    摘要翻译: 一种可用于预定波长区域中的两个波长且具有简单结构的偏振元件。 偏振元件具有两层结构,其中在基板上形成具有三角形横截面的恒定周期λ的栅格图案,并且将折射率高于基板的膜沉积在栅格图案上。 当第一和第二波长λ1时,λ2满足λ2λ2,λcosθ< SUB< 2> > 0 其中θ0是栅格表面上的入射角。 确定栅格周期,栅格高度和膜厚度,使得相对于第一波长λ1> 1,TE偏振零级衍射光的反射效率是预定值,或 TM偏振零级衍射光的传输效率为预定值以上,并且相对于波长λ2,TE极化零级的传输效率 衍射光为预定值以上,TM偏振零级衍射光的反射效率为规定值以上。

    Cyclic aminophenyl sulfamate derivative
    25.
    发明申请
    Cyclic aminophenyl sulfamate derivative 有权
    环氨基苯基氨基磺酸酯衍生物

    公开(公告)号:US20060189625A1

    公开(公告)日:2006-08-24

    申请号:US10558253

    申请日:2004-05-07

    CPC分类号: C07D211/32 C07D211/14

    摘要: This invention provides cyclicamino-phenyl sulfamate derivatives represented by a formula wherein each of R1 and R2 stands for hydrogen or lower alkyl; each of R3 and R4 stands for hydrogen, halogen, cyano or the like; A stands for nitrogen or CH; B stands for CH2, SO2, CO, optionally substituted phenyl or the like; and R5 stands for alkyl, phenyl, amino or the like, or salts thereof which exhibit excellent steroid sulfatase inhibitory activity and are useful for prevention or treatment of diseases associated with steroids such as estrogen, androgen and the like.

    摘要翻译: 本发明提供由下式表示的环氨基 - 苯基氨基磺酸酯衍生物,其中R 1和R 2各自代表氢或低级烷基; R 3和R 4中的每一个代表氢,卤素,氰基等; A代表氮或CH; B代表CH 2,SO 2,CO,任选取代的苯基等; R 5表示烷基,苯基,氨基等,或其盐,其表现出优异的类固醇硫酸酯酶抑制活性,并且可用于预防或治疗与类固醇如雌激素,雄激素相关的疾病, 喜欢。

    Object collaboration apparatus
    27.
    发明授权
    Object collaboration apparatus 失效
    对象协作设备

    公开(公告)号:US06836891B2

    公开(公告)日:2004-12-28

    申请号:US09812826

    申请日:2001-03-21

    IPC分类号: G06F946

    摘要: An object collaboration apparatus is presented, in which driving is performed in accordance with message/action reaction relations, and the collaboration among objects can be changed in a flexible and dynamical manner. A message/action reaction relation in a message/action reaction table 103 of a message/action reaction relation storage portion 102 storing relations between messages and information on actions that are reactions to the messages is separated with a message/action reaction relation separation portion 106 of a message/action reaction relation update control portion 105, and a new message/action relation is organized with a message/action reaction relation organizing portion 107. Object collaborations can be organized in a flexible and dynamical manner by inserting object collaboration relations, coupling independent object collaborations, external intervention of objects, participation in object collaborations by message sender-side multiplication and participation in object collaborations by message receiver-side multiplication.

    摘要翻译: 提出了一种对象协作装置,其中根据消息/动作反应关系进行驾驶,并且可以灵活和动态地改变对象之间的协作。消息/动作反应表103中的消息/动作反应关系 存储消息之间的关系的消息/动作反应关系存储部分102与关于消息的反应的动作的信息与消息/动作反应关系更新控制部分105的消息/动作反应关系分离部分106分离,并且 通过消息/动作反应关系组织部分107组织新的消息/动作关系。对象协作可以通过插入对象协作关系,耦合独立对象协作,对象的外部干涉,参与对象协作的灵活和动态方式来组织 消息发送方乘法和参与objec 通过消息接收机侧乘法进行协作。

    Quantum interference type semiconductor device
    30.
    发明授权
    Quantum interference type semiconductor device 失效
    量子干涉型半导体器件

    公开(公告)号:US5130766A

    公开(公告)日:1992-07-14

    申请号:US389265

    申请日:1989-08-03

    IPC分类号: H01L29/66

    CPC分类号: B82Y10/00 H01L29/66977

    摘要: A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into which a carrier is injected and from which a carrier is drained, at least one gate electrode is arranged at the side of the one bifurcated branch conduction channel, and a kind of filter using a resonance tunneling barrier arranged before or upstream of the semiconductor region into which a carrier is injected. The filter passes a carrier having a certain energy legvel to the channel whereby the level of the carrier traveling in the channel becomes equal to realize a good quantum interference effect.