公开(公告)号：US07852893B2

公开(公告)日：2010-12-14

申请号：US12035959

申请日：2008-02-22

申请人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  G11B7/127 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/32341

摘要： A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface.

摘要翻译： 半导体激光器件包括：第一导电类型的衬底; 设置在所述基板上并且至少包括有源层和包层的氮化物半导体层叠体，所述包层为第二导电型并具有脊形波导; 设置在由所述层叠体构成的光谐振器的一个端面的第一膜，所述第一膜的反射率为40％以上且60％以下; 以及设置在所述光谐振器的另一端面上并且具有比所述第一膜高的反射率的第二膜。 光谐振器的长度为400μm以下。 一端面用作发光面。

公开(公告)号：US20080205467A1

公开(公告)日：2008-08-28

申请号：US12035959

申请日：2008-02-22

申请人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Makoto Okada ,  Takayuki Matsuyama

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  G11B7/127 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2009 ,  H01S5/32341

摘要： A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface.

摘要翻译： 半导体激光器件包括：第一导电类型的衬底; 设置在所述基板上并且至少包括有源层和包层的氮化物半导体层叠体，所述包层为第二导电型并具有脊形波导; 设置在由所述层叠体构成的光谐振器的一个端面的第一膜，所述第一膜的反射率为40％以上且60％以下; 以及设置在所述光谐振器的另一端面上并且具有比所述第一膜高的反射率的第二膜。 光谐振器的长度为400μm以下。 一端面用作发光面。

公开(公告)号：US07358156B2

公开(公告)日：2008-04-15

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US20080061303A1

公开(公告)日：2008-03-13

申请号：US11850377

申请日：2007-09-05

申请人： Takayuki MATSUYAMA ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

发明人： Takayuki MATSUYAMA ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

IPC分类号： H01L29/20 ,  H01L21/304

CPC分类号： H01L21/3043 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

摘要翻译： 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。 第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。 第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。

公开(公告)号：US20070093041A1

公开(公告)日：2007-04-26

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US07968430B2

公开(公告)日：2011-06-28

申请号：US11850377

申请日：2007-09-05

申请人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

发明人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/3043 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

摘要翻译： 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。 第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。 第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。

公开(公告)号：US20220326632A1

公开(公告)日：2022-10-13

申请号：US17657471

申请日：2022-03-31

申请人： Keiji MAKABE ,  Akira Tanaka ,  Hidekazu Kakinuma ,  Tsukiko Takahashi

发明人： Keiji MAKABE ,  Akira Tanaka ,  Hidekazu Kakinuma ,  Tsukiko Takahashi

IPC分类号： G03G9/097 ,  G03G15/08 ,  G03G9/08

摘要： [Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering.
[Means of Achieving the Object]
The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.

公开(公告)号：US10303072B2

公开(公告)日：2019-05-28

申请号：US15889461

申请日：2018-02-06

申请人： Akira Tanaka ,  Hiroyuki Takeda ,  Junichi Awamura ,  Hiroshi Yamada ,  Daichi Hisakuni ,  Yasuo Kamada

发明人： Akira Tanaka ,  Hiroyuki Takeda ,  Junichi Awamura ,  Hiroshi Yamada ,  Daichi Hisakuni ,  Yasuo Kamada

IPC分类号： G03G9/087 ,  C08G63/42 ,  C08G63/20 ,  G03G15/00 ,  C08G63/195 ,  C08G63/16 ,  C08G63/66 ,  C08G18/75 ,  C08G18/42

摘要： A toner is provided. The toner contains a polyester resin. The toner has a glass transition temperature (Tg1st) at first temperature rising of differential scanning calorimetry (DSC) of from 45° C. to 65° C. The toner includes a component insoluble in tetrahydrofuran (THF) having two glass transition temperatures (Tga1st and Tgb1st) at the first temperature rising of DSC, where Tga1st is in a range of −45° C. to 5° C. and Tgb1st is in a range of 45° C. to 70° C. The toner includes a component soluble in THF having a glass transition temperature (Tg2nd) at second temperature rising of DSC of from 40° C. to 65° C.

公开(公告)号：US08686398B2

公开(公告)日：2014-04-01

申请号：US13599852

申请日：2012-08-30

申请人： Akira Tanaka ,  Yoko Motojima

发明人： Akira Tanaka ,  Yoko Motojima

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

摘要翻译： 半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

公开(公告)号：US08570240B2

公开(公告)日：2013-10-29

申请号：US12996839

申请日：2008-06-27

申请人： Akira Tanaka ,  Machiko Oouchida ,  Hiroyuki Mori

发明人： Akira Tanaka ,  Machiko Oouchida ,  Hiroyuki Mori

IPC分类号： H01Q1/36

CPC分类号： H04B13/00

摘要： A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.

摘要翻译： 用于传送电磁波，从而进行通信的通信片结构的特征在于，通信片结构包括平面基底材料，其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0，一个 基体材料的一侧包括导体A存在部分和不存在部分，并且基材的另一侧包括存在于其中90％以上的导体B. 通信片结构使得能够在二维方面进行通信，并且通信片结构在通信性能方面非常优异。