公开(公告)号：US06632592B1

公开(公告)日：2003-10-14

申请号：US09657049

申请日：2000-09-07

申请人： Shoji Mimotogi

发明人： Shoji Mimotogi

IPC分类号： G03F700

CPC分类号： G03F1/32 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

摘要： A resist pattern forming method of forming a pattern on a resist film formed on a wafer by using a projection exposure apparatus generates a resized pattern of an active area and its inverted pattern, then generates a logical product pattern of a gate pattern to be exposed and the resized pattern, generates a first mask having a logical sum pattern of the inverted pattern and the logical product pattern as a light shielding film, generates a second mask having a logical sum pattern of the resized pattern and the gate pattern as a light shielding film, exposes the resist film on the wafer using the first mask under a condition that an numerical aperture of the projection exposure apparatus is small, and then exposes the resist film on the wafer using the second mask under a condition that the numerical aperture of the projection exposure apparatus is large.

摘要翻译： 通过使用投影曝光装置在形成在晶片上的抗蚀剂膜上形成图案的抗蚀剂图案形成方法产生有效区域及其反转图案的调整大小的图案，然后生成要暴露的栅极图案的逻辑积图案， 调整大小的图案，生成具有反转图案和逻辑积图案的逻辑和图案的第一掩模作为遮光膜，生成具有调整大小的图案和栅极图案的逻辑和图案的第二掩模作为遮光膜 在投影曝光装置的数值孔径小的条件下，使用第一掩模在晶片上曝光抗蚀剂膜，然后使用第二掩模将抗蚀剂膜暴露在晶片上，条件是投影的数值孔径 曝光装置很大。

公开(公告)号：US06225033B1

公开(公告)日：2001-05-01

申请号：US09413543

申请日：1999-10-06

申请人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

发明人： Yasunobu Onishi ,  Kentaro Matsunaga ,  Shoji Mimotogi ,  Katsuya Okumura

IPC分类号： G03F730

CPC分类号： G03F7/38

摘要： An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.

摘要翻译： 在形成在硅晶片上的硅衬底上的SiO 2膜上形成防反射膜。 在抗反射膜上形成化学放大正光刻胶。 抗蚀剂曝光。 强碱的蒸气被施加到化学放大正性抗蚀剂的表面。 整个抗蚀剂用显影液显影，从而形成抗蚀剂图案。

公开(公告)号：US5745388A

公开(公告)日：1998-04-28

申请号：US551803

申请日：1995-11-07

申请人： Shoji Mimotogi ,  Soichi Inoue

发明人： Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G01B11/24 ,  G03F7/26 ,  G06F17/50 ,  G06F19/00 ,  G06T11/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

CPC分类号： G06F17/5018 ,  G06T11/203

摘要： A profile simulation method of predicting a profile of a surface of a film to be processed which changes when the surface of the film on a substrate is physically or chemically processed, is characterized by comprising the steps of setting a plurality of representative points on the surface of the film before a process, moving the plurality of representative points in a first direction perpendicular to the surface of the film on the substrate in accordance with processing velocities at the plurality of representative points, switching the moving direction of the representative points from the first direction to a second direction parallel to the surface of the film on the substrate, and moving the plurality of representative points in the second direction in accordance with processing velocities at the plurality of representative points, and setting all loci of the plurality of representative points, which have moved from the first direction to the second direction in a predetermined processing time, as paths, and obtaining a envelope or surface for all the paths as a profile after the process.

摘要翻译： 一种轮廓模拟方法，其特征在于包括以下步骤：在所述表面上设置多个代表点，所述轮廓模拟方法用于预测在基材上的所述膜的表面物理或化学处理时改变的被处理膜表面的轮廓， 在所述处理之前，根据所述多个代表点处的处理速度，在与所述基板上的所述膜的表面垂直的第一方向上移动所述多个代表点，将所述代表点的移动方向从所述第一 方向到平行于基板上的膜表面的第二方向，并且根据多个代表点处的处理速度在第二方向上移动多个代表点，并且设置多个代表点的所有轨迹， 它们以预定的p从第一方向移动到第二方向 处理时间作为路径，并且在所有过程之后获得用于所有路径的包络或表面作为简档。

公开(公告)号：US20100112812A1

公开(公告)日：2010-05-06

申请号：US12588968

申请日：2009-11-04

申请人： Yukiyasu Arisawa ,  Tadahito Fujisawa ,  Shoji Mimotogi

发明人： Yukiyasu Arisawa ,  Tadahito Fujisawa ,  Shoji Mimotogi

IPC分类号： H01L21/033 ,  G06F19/00 ,  G06F17/50

CPC分类号： G03F1/84

摘要： A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

摘要翻译： 光掩模质量估计系统包括测量单元，纬度计算单元和估计单元。 测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。 纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。 估计单元基于曝光宽容度估计每个芯片图案的质量。

公开(公告)号：US20090244512A1

公开(公告)日：2009-10-01

申请号：US12400677

申请日：2009-03-09

申请人： Shoji Mimotogi ,  Yasuharu Sato

发明人： Shoji Mimotogi ,  Yasuharu Sato

IPC分类号： G03B27/32 ,  G06F17/00

CPC分类号： G03B27/32 ,  G03F7/705

摘要： A lithography process window analyzing method for setting a process window based on ranges of exposure amounts and focus positions, and giving evaluation of reliability of the set process window, includes setting, based on a plurality of process conditions including exposure amounts and focus positions in the performed exposure processing, analysis reliability M for process conditions including an arbitrary exposure amount and an arbitrary focus position; calculating reliability R of the process window based on the analysis reliability M concerning the process conditions included in the process window; and comparing a magnitude relation between the reliability R and a predetermined threshold and determining presence or absence of reliability of the process window according to a result of the comparison.

摘要翻译： 一种用于基于曝光量和焦点位置的范围来设置处理窗口的光刻处理窗口分析方法，以及对设置的处理窗口的可靠性的评估，包括基于多个处理条件，包括曝光量和焦点位置 执行曝光处理，包括任意曝光量和任意焦点位置的处理条件的分析可靠度M; 基于与处理窗口中包含的处理条件有关的分析可靠度M来计算处理窗口的可靠度R; 以及根据比较结果比较可靠度R和预定阈值之间的大小关系，并确定处理窗口的可靠性的存在与否。

公开(公告)号：US07596776B2

公开(公告)日：2009-09-29

申请号：US11730102

申请日：2007-03-29

申请人： Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato ,  Soichi Inoue

发明人： Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato ,  Soichi Inoue

IPC分类号： G06F17/50

CPC分类号： G06F17/5009

摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.

摘要翻译： 一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源 光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案 直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布 。

公开(公告)号：US20090217233A1

公开(公告)日：2009-08-27

申请号：US12395481

申请日：2009-02-27

申请人： Akiko Mimotogi ,  Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato

发明人： Akiko Mimotogi ,  Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato

IPC分类号： G06F17/50

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70

摘要： A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.

摘要翻译： 当掩模上形成的掩模图案通过投影光学系统通过将照明光倾斜地照射到掩模的掩模表面上时，模拟基板上的光强度分布的方法，该方法包括设置掩模的掩模表面之间的相位差 根据投影光学系统的光瞳上的零级衍射光与一级衍射光之间的距离中的至少一个所确定的零级衍射光和一级衍射光， 形成在掩模上的屏蔽部分，由照明光的光轴方向和掩模上的入射方向限定的角度以及掩模图案的尺寸与掩模图案的半周期之间的差异，并且进行模拟 根据设定的相位差在基板上的光强度分布。

公开(公告)号：US07575835B2

公开(公告)日：2009-08-18

申请号：US11512108

申请日：2006-08-30

申请人： Takashi Sato ,  Shoji Mimotogi ,  Shigeru Hasebe

发明人： Takashi Sato ,  Shoji Mimotogi ,  Shigeru Hasebe

IPC分类号： G03F1/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions on a wafer in a case where the first mask is used and an optical intensity distribution on the wafer in a case where a second mask is used, a size of a mask pattern of the second mask being measured in advance, calculating a difference in optical intensity between the first mask and the second mask from the simulated optical intensity distributions, and calculating a second exposure quantity to be applied to the second mask to provide a second resist pattern, from the first exposure quantity and the difference in optical intensity.

摘要翻译： 公开了一种曝光方法，其包括准备预先测量掩模图案的尺寸的第一掩模，计算要施加到第一掩模的第一曝光量，以通过使用第一掩模提供第一抗蚀剂图案，模拟 在使用第一掩模的情况下在晶片上的光强度分布和在使用第二掩模的情况下在晶片上的光强度分布，预先测量第二掩模的掩模图案的尺寸，计算 根据模拟的光强度分布，第一掩模和第二掩模之间的光强度差异，以及从第一曝光量和光强度差计算施加到第二掩模以提供第二抗蚀剂图案的第二曝光量 。

公开(公告)号：US07560197B2

公开(公告)日：2009-07-14

申请号：US11061599

申请日：2005-02-22

申请人： Hiroko Nakamura ,  Toshiya Kotani ,  Satoshi Tanaka ,  Shoji Mimotogi

发明人： Hiroko Nakamura ,  Toshiya Kotani ,  Satoshi Tanaka ,  Shoji Mimotogi

IPC分类号： G03F1/06

CPC分类号： G03F7/0035 ,  G03F1/92 ,  G03F7/40

摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.

摘要翻译： 公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及 设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案 布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案， 第二个打开模式的地方。

公开(公告)号：US07426712B2

公开(公告)日：2008-09-16

申请号：US11485554

申请日：2006-07-13

申请人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

发明人： Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

IPC分类号： G06F17/50 ,  G03F9/00

CPC分类号： G03F7/70433 ,  G03F7/705

摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern of interest, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern of interest and a pattern of a neighboring region , the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern of interest; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern of interest and the reference intensity line in the changed relative position to define a line width of interest of the pattern of interest.

摘要翻译： 光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案相对应的部分中，根据感兴趣的图案和图像之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置， 所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述参考强度线被定义为指定所述感兴趣图案的边缘的位置; 以及计算与感兴趣的图案相对应的潜在图像曲线的一部分的交点与改变的相对位置中的参考强度线之间的距离，以限定感兴趣的图案的感兴趣的线宽。