Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device
    2.
    发明授权
    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
    用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法

    公开(公告)号:US07636910B2

    公开(公告)日:2009-12-22

    申请号:US11475075

    申请日:2006-06-27

    IPC分类号: G06F17/50

    CPC分类号: G03F1/84

    摘要: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

    摘要翻译: 光掩模质量估计系统包括测量单元,纬度计算单元和估计单元。 测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。 纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。 估计单元基于曝光宽容度估计每个芯片图案的质量。

    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device
    3.
    发明申请
    Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
    用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法

    公开(公告)号:US20070005280A1

    公开(公告)日:2007-01-04

    申请号:US11475075

    申请日:2006-06-27

    IPC分类号: G06F19/00

    CPC分类号: G03F1/84

    摘要: A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.

    摘要翻译: 光掩模质量估计系统包括测量单元,纬度计算单元和估计单元。 测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。 纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。 估计单元基于曝光宽容度估计每个芯片图案的质量。

    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program product
    4.
    发明申请
    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program product 失效
    投影曝光掩模验收决策系统,投影曝光掩模验收决策方法,半导体器件制造方法和计算机程序产品

    公开(公告)号:US20070182941A1

    公开(公告)日:2007-08-09

    申请号:US11653279

    申请日:2007-01-16

    IPC分类号: G03B27/68

    摘要: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

    摘要翻译: 投影曝光掩模验收判定系统包括:保证对象测量单元,用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元,用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量, 测量单元,第二曝光特性劣化量计算单元,用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元,计算第一和第二数量的简单和, 计算第一和第二数量的总和平均值的单位,全部曝光特性劣化量计算单元,计算作为简单和的r的内部分割值的整体曝光特性劣化量 总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

    METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    评估照相掩模的方法和制造半导体器件的方法

    公开(公告)号:US20090202924A1

    公开(公告)日:2009-08-13

    申请号:US12360929

    申请日:2009-01-28

    IPC分类号: G03F1/00 H01L21/027

    CPC分类号: G03F1/84

    摘要: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译: 一种评估光掩模的方法,包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸,获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差,将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离,基于每个组中的每个组的尺寸差获得评估值,并且基于评估值来评估光罩。

    Method of evaluating a photo mask and method of manufacturing a semiconductor device
    6.
    发明授权
    Method of evaluating a photo mask and method of manufacturing a semiconductor device 有权
    评估光掩模的方法和制造半导体器件的方法

    公开(公告)号:US07912275B2

    公开(公告)日:2011-03-22

    申请号:US12360929

    申请日:2009-01-28

    IPC分类号: G06K9/00 G03F1/00

    CPC分类号: G03F1/84

    摘要: A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.

    摘要翻译: 一种评估光掩模的方法,包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸,获得图案部分与不同于图案部分的图案之间的图案间距离 获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差,将根据每个图案部分获得的尺寸差分成多组 对于每个图案部分获得的图案间距离,基于每个组中的每个组的尺寸差获得评估值,并且基于评估值来评估光罩。

    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project
    7.
    发明授权
    Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project 失效
    投影曝光掩模验收决策系统,投影曝光掩模验收决策方法,半导体器件制造方法和计算机程序项目

    公开(公告)号:US07446852B2

    公开(公告)日:2008-11-04

    申请号:US11653279

    申请日:2007-01-16

    IPC分类号: G03B27/68 G03B27/52 G03F1/00

    摘要: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

    摘要翻译: 投影曝光掩模验收判定系统包括:保证对象测量单元,用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元,用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量, 测量单元,第二曝光特性劣化量计算单元,用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元,计算第一和第二数量的简单和, 计算第一和第二数量的总和平均值的单位,全部曝光特性劣化量计算单元,计算作为简单和的r的内部分割值的整体曝光特性劣化量 总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

    METHOD OF CREATING AN EVALUATION MAP, SYSTEM, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND COMPUTER PROGRAM PRODUCT
    8.
    发明申请
    METHOD OF CREATING AN EVALUATION MAP, SYSTEM, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND COMPUTER PROGRAM PRODUCT 审中-公开
    创建评估图的方法,系统,制造半导体器件和计算机程序产品的方法

    公开(公告)号:US20110262867A1

    公开(公告)日:2011-10-27

    申请号:US13052840

    申请日:2011-03-21

    IPC分类号: G03F7/20 G06F17/50

    CPC分类号: G03F1/70

    摘要: According to one embodiment, evaluation map creating method is disclosed. The method determines number (N) of times on changing division starting position of layout for segmenting the layout into areas M to create the map by segmenting the layout into areas m and obtaining evaluation value v corresponding to area m (P1). The layout is divided by areas M larger than area m by changing the position, centers of k pieces of areas mk among areas m coincide centers of k pieces of areas M among areas M (P2). Pattern densities D of the layout in areas M is obtained (P3). Evaluation values Vk on areas Mk are calculated by convolving pattern density D for each of areas M with distribution function F (P4). The P2-P4 are repeated N times and obtained N pieces of evaluation values Vk are synthesized (P5).

    摘要翻译: 根据一个实施例,公开了评估图创建方法。 该方法通过将布局分割为区域m并获得对应于区域m(P1)的评估值v来确定将布局分割的区域开始位置的次数(N)确定为区域M以创建地图。 通过改变位置将布局除以大于区域m的区域M,区域m中的k个区域mk的中心与区域M(P2)中的k个区域M的中心重合。 获得区域M中的布局的图案密度D(P3)。 通过对具有分布函数F(P4)的每个区域M的图案密度D进行卷积来计算区域Mk上的评价值Vk。 P2-P4重复N次,得到N个评价值Vk(P5)。

    Method of correcting a flare and computer program product
    9.
    发明授权
    Method of correcting a flare and computer program product 有权
    纠正火炬和计算机程序产品的方法

    公开(公告)号:US08039177B2

    公开(公告)日:2011-10-18

    申请号:US12817968

    申请日:2010-06-17

    IPC分类号: G03F9/00

    CPC分类号: G03F1/70

    摘要: A method of correcting a flare comprising: calculating a distribution of a flare value corresponding to pattern data on the pattern data as a flare map; calculating an occupancy of a pattern having a predetermined flare value on the pattern data as a flare value occupancy for each flare value, by using the flare map; determining a reference flare value to be a reference of the flare value based on the distribution of the flare value occupancy; and performing a pattern correction corresponding to the flare value with a pattern correction amount at the reference flare value as a reference.

    摘要翻译: 一种校正闪光的方法,包括:计算与图案数据上的图案数据相对应的耀斑值的分布,作为耀斑图; 通过使用闪光图,计算对图案数据具有预定耀斑值的图案的占有量作为每个耀斑值的闪光值占有率; 基于闪光值占用的分布,确定参考闪光值作为闪光值的参考; 并且以参考闪光值的模式校正量作为参考,执行与闪光值对应的图案校正。

    Method of correcting mask pattern, computer program product, and method of manufacturing semiconductor device
    10.
    发明授权
    Method of correcting mask pattern, computer program product, and method of manufacturing semiconductor device 有权
    掩模图案校正方法,计算机程序产品和半导体器件制造方法

    公开(公告)号:US08617773B2

    公开(公告)日:2013-12-31

    申请号:US13239019

    申请日:2011-09-21

    IPC分类号: G03F1/44 G03F1/72 G03F1/38

    摘要: In the method of correcting a mask pattern according to the embodiments, a mask pattern correction amount for a reference flare value is calculated as a reference mask correction amount, for every type of patterns within the layout, and a change amount of the mask pattern correction amount corresponding to the change amount of the flare value is calculated as the change amount information. A mask pattern corresponding to the flare value of the pattern is created based on the reference mask correction amount and the change amount information corresponding to the pattern, extracted from the information having the pattern, the reference mask correction amount, and the change amount information correlated with each other, and based on a difference between the flare value of the pattern and the reference flare value.

    摘要翻译: 在根据实施例的校正掩模图案的方法中,对于布局中的每种类型的图案,计算用于参考闪光值的掩模图案校正量作为参考掩模校正量,以及掩模图案校正的改变量 计算与闪光值的变化量对应的量作为变化量信息。 基于从具有图案的信息提取参考掩模校正量和变化量信息相关联的参考掩模校正量和对应于图案的改变量信息,创建与图案的闪光值相对应的掩模图案 并且基于图案的耀斑值和参考闪光值之间的差异。