公开(公告)号：US20110104890A1

公开(公告)日：2011-05-05

申请号：US12935746

申请日：2009-07-14

申请人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

发明人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  C23C16/045 ,  C23C16/18 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882

摘要： Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed.

摘要翻译： 提供了一种Cu电互连膜形成方法，其中在半导体器件制造工艺中使用具有改善的与Cu电互连膜的粘合性的粘合剂层（基膜）。 在基板上形成阻挡膜之后，形成孔等，在阻挡膜上形成PVD-Co膜或CVD-Co膜或ALD-Co膜。 然后，在用CVD-Cu膜或PVD-Cu膜填充或埋入具有形成在表面上的Co膜的孔等之后，在350℃或更低的温度下进行热处理 ，形成Cu电互连膜。

公开(公告)号：US07282002B2

公开(公告)日：2007-10-16

申请号：US10874746

申请日：2004-06-24

申请人： Shigeru Kanehara ,  Ken Kanokogi ,  Toru Yagasaki ,  Masamichi Harada

发明人： Shigeru Kanehara ,  Ken Kanokogi ,  Toru Yagasaki ,  Masamichi Harada

IPC分类号： F16G1/22

CPC分类号： F16G5/16

摘要： A belt for a continuously variable transmission comprises endless plate-like rings 2 and a plurality of plate-like elements 3, which are placed adjacent to one another and slidably on the rings 2, so that the rings 2 are disposed on the saddle portions 34 of the elements 3, respectively. In each element 3, a first recess 42 is provided at the upper innermost part of each saddle portion 34 such that the first recess 42 is continuous to a corresponding lower side end of the neck portion 33. In addition, a second recess 43 is provided at the lower innermost part of each ear portion 35 such that the second recess 43 is continuous to a corresponding upper side end of the neck portion 33. At least one of the first and second recesses 42 and 43 is in an elliptic arc figure, in a compound arc figure that comprises various circular arcs or in a compound arc figure that comprises an elliptic arc and one or more circular arcs.

摘要翻译： 用于无级变速器的皮带包括环形板状环2和多个板状元件3，它们彼此相邻并且可滑动地放置在环2上，使得环2设置在鞍座部分34上 的元件3。 在每个元件3中，第一凹部42设置在每个鞍部34的上部最上部，使得第一凹部42与颈部33的相应的下侧端连续。 此外，在每个耳部35的最下部设置有第二凹部43，使得第二凹部43与颈部33的相应的上侧端连续。 在第一和第二凹部42和43中的至少一个处于椭圆弧图中，在包括各种圆弧的复合弧形图中或在包括椭圆弧和一个或多个圆弧的复合圆弧图中。

公开(公告)号：US20050003917A1

公开(公告)日：2005-01-06

申请号：US10874746

申请日：2004-06-24

申请人： Shigeru Kanehara ,  Ken Kanokogi ,  Toru Yagasaki ,  Masamichi Harada

发明人： Shigeru Kanehara ,  Ken Kanokogi ,  Toru Yagasaki ,  Masamichi Harada

IPC分类号： F16G5/16 ,  F16G1/00

CPC分类号： F16G5/16

摘要： A belt for a continuously variable transmission comprises endless plate-like rings 2 and a plurality of plate-like elements 3, which are placed adjacent to one another and slidably on the rings 2, so that the rings 2 are disposed on the saddle portions 34 of the elements 3, respectively. In each element 3, a first recess 42 is provided at the upper innermost part of each saddle portion 34 such that the first recess 42 is continuous to a corresponding lower side end of the neck portion 33. In addition, a second recess 43 is provided at the lower innermost part of each ear portion 35 such that the second recess 43 is continuous to a corresponding upper side end of the neck portion 33. At least one of the first and second recesses 42 and 43 is in an elliptic arc figure, in a compound arc figure that comprises various circular arcs or in a compound arc figure that comprises an elliptic arc and one or more circular arcs.

摘要翻译： 用于无级变速器的皮带包括环形板状环2和多个板状元件3，它们彼此相邻并且可滑动地放置在环2上，使得环2设置在鞍座部分34上 的元件3。 在每个元件3中，在每个鞍座部分34的最上部分设置有第一凹部42，使得第一凹部42与颈部33的相应的下侧端连续。此外，设置有第二凹部43 在每个耳部35的较低的最内部分处，使得第二凹部43连续到颈部33的相应的上侧端。第一和第二凹部42和43中的至少一个是椭圆弧图， 包括各种圆弧的复合弧形图或包括椭圆弧和一个或多个圆弧的复合弧形图。

公开(公告)号：US5652178A

公开(公告)日：1997-07-29

申请号：US466279

申请日：1995-06-06

申请人： Tadasu Izumi ,  Masamichi Harada ,  Yukari Inoguchi

发明人： Tadasu Izumi ,  Masamichi Harada ,  Yukari Inoguchi

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/0062

摘要： A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：使p型或n型半导体衬底在高温下与生长溶液接触，然后降低温度以形成单晶外延层 与半导体衬底上的半导体衬底相同的类型，随后进一步降低上述温度以形成与外延层上的外延层相反类型的第一单晶外延层，然后切断生长溶液以形成 外延晶片的结果是在高温下与外延晶片的第一外延层接触的生长溶液，然后降低温度以形成与第一外延层相同种类和类型的第二单晶外延层， 第一个外延层。

公开(公告)号：US5529938A

公开(公告)日：1996-06-25

申请号：US450922

申请日：1995-05-26

申请人： Hiroshi Umeda ,  Hiroshi Tanaka ,  Masamichi Harada ,  Yasuhiko Arai

发明人： Hiroshi Umeda ,  Hiroshi Tanaka ,  Masamichi Harada ,  Yasuhiko Arai

IPC分类号： H01L33/30 ,  H01L21/265

CPC分类号： H01L33/305 ,  H01L33/0062

摘要： A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH.sub.3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.

摘要翻译： 一种在n型GaP衬底上具有包含氮的GaP的pn结的发光二极管的制造方法包括以下步骤：通过外延生长在n型GaP衬底上形成n型GaP层， n型GaP衬底与过饱和熔融Ga接触; 通过使熔融的Ga与NH 3气体接触，通过外延生长在n型GaP层上形成具有低n型载流子浓度的n型GaP：N层; 在n型GaP：N层上形成载流子浓度几乎等于n型GaP：N层的载流子浓度的p型GaP：N层。

公开(公告)号：US08749263B2

公开(公告)日：2014-06-10

申请号：US13221007

申请日：2011-08-30

申请人： Masayuki Ohta ,  Masaki Tatsumi ,  Yoshiki Sota ,  Kazuo Tamaki ,  Shinji Yamaguchi ,  Masamichi Harada ,  Shin Ito ,  Tomoshi Kimura ,  Yoshifumi Inada

发明人： Masayuki Ohta ,  Masaki Tatsumi ,  Yoshiki Sota ,  Kazuo Tamaki ,  Shinji Yamaguchi ,  Masamichi Harada ,  Shin Ito ,  Tomoshi Kimura ,  Yoshifumi Inada

IPC分类号： H01L33/52

CPC分类号： H01L24/97 ,  H01L23/49827 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

摘要翻译： 根据本发明的半导体器件具有实施在绝缘基板上的半导体元件，包括：基板前表面电极，形成在绝缘基板的前表面侧并与半导体元件的元件电极连接; 基板背面电极，其形成在所述绝缘基板的背面侧并与所述基板正面电极电连接; 以及多个连接电极，其在绝缘基板的厚度方向上从前表面和后表面的一侧延伸到另一侧，用于将基板正面电极与基板背面电极电连接，其中 基板前表面电极或基板背面电极被形成为具有为多个连接电极中的每一个分开的平面图案。

公开(公告)号：US08476161B2

公开(公告)日：2013-07-02

申请号：US12935746

申请日：2009-07-14

申请人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

发明人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/18

CPC分类号： H01L21/76846 ,  C23C16/045 ,  C23C16/18 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882

摘要： Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed.

摘要翻译： 提供了一种Cu电互连膜形成方法，其中在半导体器件制造工艺中使用具有改善的与Cu电互连膜的粘附性的粘合剂层（基膜）。 在基板上形成阻挡膜之后，形成孔等，在阻挡膜上形成PVD-Co膜或CVD-Co膜或ALD-Co膜。 然后，在用CVD-Cu膜或PVD-Cu膜填充或埋入具有形成在表面上的Co膜的孔等之后，在350℃或更低的温度下进行热处理 ，形成Cu电互连膜。

公开(公告)号：US08400011B2

公开(公告)日：2013-03-19

申请号：US12885073

申请日：2010-09-17

申请人： Yoshinobu Kawaguchi ,  Kenichi Yoshimura ,  Masamichi Harada ,  Katsuhiko Kishimoto

发明人： Yoshinobu Kawaguchi ,  Kenichi Yoshimura ,  Masamichi Harada ,  Katsuhiko Kishimoto

IPC分类号： B60L1/00

CPC分类号： F21V23/0442 ,  F21S41/14 ,  F21S41/16 ,  F21S45/10 ,  F21V9/30 ,  F21W2102/00 ,  F21Y2115/30 ,  H01S5/005

摘要： An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.

摘要翻译： 提供了一种提高眼睛安全性的照明装置。 照明装置包括：半导体激光元件，用作发射激光的激发光源; 荧光板，其包含用于发射所需颜色的光的荧光物质，并且用从所述半导体激光元件发射的激光照射; 检测从荧光板反射的光的受光元件部; 以及光源控制部，其基于来自所述受光元件部的检测信号，控制从所述半导体激光元件发出的激光。

公开(公告)号：US08309175B2

公开(公告)日：2012-11-13

申请号：US13298347

申请日：2011-11-17

申请人： Masamichi Harada

发明人： Masamichi Harada

IPC分类号： C23C16/34

CPC分类号： C23C16/45519 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/76843

摘要： A film forming method for producing a barrier film for a semiconductor. A metallic material gas and a reactive gas are alternatively introduced into a vacuum chamber. A back-flow preventing gas and an auxiliary gas are also introduced into the vacuum chamber. The reactive gas and the auxiliary gas are moved with a flow of the back-flow preventing gas, and radicals are produced by being in contact with a catalytic material. The metallic material gas is not in contact with the catalytic material, and the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes.

摘要翻译： 一种用于制造半导体阻挡膜的成膜方法。 将金属材料气体和反应性气体交替引入真空室。 防回流气体和辅助气体也被引入真空室。 反应气体和辅助气体通过防逆流气体的流动而移动，并且通过与催化材料接触而产生自由基。 金属材料气体不与催化材料接触，催化材料不会降解。 喷淋板可以设置在自由基产生室和反应室之间，使得自由基通过孔进入反应室。

公开(公告)号：US20120064716A1

公开(公告)日：2012-03-15

申请号：US13298347

申请日：2011-11-17

申请人： Masamichi Harada

发明人： Masamichi Harada

IPC分类号： H01L21/3205

CPC分类号： C23C16/45519 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/76843

摘要： A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed.

摘要翻译： 在半导体制造工艺中使用成膜装置，半导体使用阻挡膜的制造方法。 当交替地流动金属气体和反应性气体时，流动防止气体和辅助气体流动，反应气体和辅助气体随着防逆流气体的流动而移动，并且自由基由 与他们接触催化材料。 由于金属材料气体不与催化材料接触，催化材料不会降解。 喷淋板可以设置在自由基产生室和反应室之间，使得自由基通过孔进入反应室。 因此，形成了具有低电阻和优异覆盖的阻挡膜。