公开(公告)号：US20190189627A1

公开(公告)日：2019-06-20

申请号：US16284946

申请日：2019-02-25

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/11507 ,  H01L29/78 ,  H01L29/66 ,  H01L27/1159 ,  H01L21/28 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

公开(公告)号：US10242989B2

公开(公告)日：2019-03-26

申请号：US14282520

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/115 ,  H01L27/11507 ,  H01L49/02 ,  H01L27/1159 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

公开(公告)号：US20180003905A1

公开(公告)日：2018-01-04

申请号：US15640041

申请日：2017-06-30

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/32 ,  G02B6/30

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a protonic device and method of fabrication of same. The structure optically aligns an optical fiber to the protonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US09507104B2

公开(公告)日：2016-11-29

申请号：US15134167

申请日：2016-04-20

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/32 ,  G02B6/42 ,  G02B6/30

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US09341787B2

公开(公告)日：2016-05-17

申请号：US13732557

申请日：2013-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/32 ,  G02B6/30

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract translation: 用于将光纤与光子器件光学对准的结构及其制造方法。 该结构将光纤与光子器件光学对准，使用透镜之间的两个可由致动器头移动的透镜。 透镜可以通过与致动器头相关联的相应的动力源移动。

公开(公告)号：US20150255153A1

公开(公告)日：2015-09-10

申请号：US14719053

申请日：2015-05-21

Applicant: Micron Technology, Inc.

Inventor： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Lei Bi ,  Adam D. Johnson ,  Brent Keeth ,  Alessandro Calderoni ,  Scott E. Sills

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0069 ,  G11C2013/0047 ,  G11C2013/0057

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

Abstract translation: 本公开包括用于感测电阻式存储单元的装置和方法。 许多实施例包括对存储器单元执行感测操作以确定与存储器单元相关联的当前值，将编程信号施加到存储器单元，以及基于与存储器单元相关联的当前值来确定存储器单元的数据状态 在施加编程信号之前应用编程信号的存储单元和与存储器单元相关联的当前值。

公开(公告)号：US08809157B2

公开(公告)日：2014-08-19

申请号：US14105623

申请日：2013-12-13

Applicant: Micron Technology, Inc.

Inventor： D. V. Nirmal Ramaswamy ,  Beth R. Cook ,  Lei Bi ,  Wayne Huang ,  Ian C. Laboriante

IPC: H01L21/20

CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract translation: 形成存储单元的方法包括在第一导电结构上形成多价金属氧化物材料或含氧电介质材料之一。 用有机碱处理多价金属氧化物材料或含氧电介质材料的外表面。 另外的多价金属氧化物材料或含氧电介质材料形成在经处理的外表面上。 在多价金属氧化物材料或含氧介电材料的另一个上形成第二导电结构。

公开(公告)号：US08633084B1

公开(公告)日：2014-01-21

申请号：US13654258

申请日：2012-10-17

Applicant: Micron Technology, Inc.

Inventor： D. V. Nirmal Ramaswamy ,  Beth R. Cook ,  Lei Bi ,  Wayne Huang ,  Ian C. Laboriante

IPC: H01L21/20

CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract translation: 形成存储单元的方法包括在第一导电结构上形成多价金属氧化物材料或含氧电介质材料之一。 用有机碱处理多价金属氧化物材料或含氧电介质材料的外表面。 另外的多价金属氧化物材料或含氧电介质材料形成在经处理的外表面上。 在多价金属氧化物材料或含氧介电材料的另一个上形成第二导电结构。