公开(公告)号：US20200035298A1

公开(公告)日：2020-01-30

申请号：US16536159

申请日：2019-08-08

Applicant: Micron Technology, Inc.

Inventor： Alessio Spessot ,  Paolo Fantini ,  Massimo Ferro

IPC: G11C13/00

Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.

公开(公告)号：US20190108881A1

公开(公告)日：2019-04-11

申请号：US16158852

申请日：2018-10-12

Applicant: Micron Technology, Inc.

Inventor： Alessio Spessot ,  Paolo Fantini ,  Massimo Ferro

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0076 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.

公开(公告)号：US20170069381A1

公开(公告)日：2017-03-09

申请号：US15354822

申请日：2016-11-17

Applicant: Micron Technology, Inc.

Inventor： Paolo Fantini ,  Massimo Ferro

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/15

Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.

Abstract translation: 本文公开的实施例可以涉及具有包括正向偏置和反向偏置编程脉冲的编程脉冲序列的多电平存储器单元的编程。

公开(公告)号：US09263128B2

公开(公告)日：2016-02-16

申请号：US14679781

申请日：2015-04-06

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Paolo Fantini ,  Massimo Ferro

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C13/0061 ,  G11C2013/0092

Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.

Abstract translation: 公开了一种用于对存储器阵列中的存储器单元进行编程的方法和装置。 确定最近的编程时间，最近的编程时间是将最近的编程操作应用于存储器阵列中的参考存储器单元的时间。 然后将编程信号施加到存储器阵列中的目标存储器单元，编程信号具有至少部分地取决于最近编程时间的编程参数。

公开(公告)号：US09245620B2

公开(公告)日：2016-01-26

申请号：US14750525

申请日：2015-06-25

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Massimo Ferro ,  Paolo Fantini

IPC: G11C11/00 ,  G11C11/14 ,  G11C13/00 ,  G11C11/56 ,  G11C29/00

CPC classification number: G11C13/004 ,  G11C11/00 ,  G11C11/5678 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0069 ,  G11C13/0097 ,  G11C29/006 ,  G11C29/50008 ,  G11C2013/0052 ,  G11C2013/0057

Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.

公开(公告)号：US09099174B2

公开(公告)日：2015-08-04

申请号：US13647527

申请日：2012-10-09

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Massimo Ferro ,  Paolo Fantini

IPC: G11C11/00

CPC classification number: G11C13/004 ,  G11C11/00 ,  G11C11/5678 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0069 ,  G11C13/0097 ,  G11C29/006 ,  G11C29/50008 ,  G11C2013/0052 ,  G11C2013/0057

Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.

Abstract translation: 本公开包括包括电阻变化存储器中的漂移加速度的装置和方法。 许多实施例包括将编程信号施加到电阻可变存储单元以将该单元编程到目标状态，随后将预读信号施加到电阻可变存储单元以加速编程单元电阻的漂移，以及 随后向电阻变化存储单元施加读取信号。