公开(公告)号：US20170069375A1

公开(公告)日：2017-03-09

申请号：US15280238

申请日：2016-09-29

Applicant: Micron Technology, Inc.

Inventor： Stephen Tang

IPC: G11C13/00 ,  H01L23/528 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C13/0002 ,  G11C13/003 ,  H01L23/481 ,  H01L23/528 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1675 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract translation: 本文公开的实施例可涉及交叉点存储器阵列器件中的导电通孔。 在一个实施例中，可以使用也用于在交叉点存储器阵列器件的第一电极层中形成导电线的光刻操作形成通孔。

公开(公告)号：US09484534B2

公开(公告)日：2016-11-01

申请号：US13870434

申请日：2013-04-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Stephen Tang

IPC: H01L23/52 ,  H01L45/00 ,  H01L27/10 ,  G11C13/00 ,  H01L23/48 ,  H01L27/24

CPC classification number: G11C13/0004 ,  G11C13/0002 ,  G11C13/003 ,  H01L23/481 ,  H01L23/528 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1675 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

公开(公告)号：US09390768B2

公开(公告)日：2016-07-12

申请号：US14318965

申请日：2014-06-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeremy Hirst ,  Hernan Castro ,  Stephen Tang

IPC: G11C7/00 ,  G11C7/06 ,  G11C7/12 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C7/06 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0059 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2207/063

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract translation: 本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用 在电路中。 例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。 在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。

公开(公告)号：US20140334237A1

公开(公告)日：2014-11-13

申请号：US14318965

申请日：2014-06-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeremy Hirst ,  Hernan Castro ,  Stephen Tang

IPC: G11C7/06 ,  G11C7/12

CPC classification number: G11C13/004 ,  G11C7/06 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0059 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2207/063

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract translation: 本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用 在电路中。 例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。 在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。