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公开(公告)号：US20210328558A1
公开(公告)日：2021-10-21
申请号：US17230342
申请日：2021-04-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Tomoaki SATO , Hisanori NAMIE
Abstract: A power amplifier circuit includes a first amplification path including a first power amplifier, a second amplification path including a second power amplifier, a first switching circuit configured to electrically connect either the first amplification path or the second amplification path and a first output terminal to each other, a second switching circuit configured to electrically connect an input terminal and any one of a plurality of second output terminals to each other, and a matching circuit configured to electrically connect the first output terminal and the input terminal to each other and achieve impedance matching between the first output terminal and the input terminal.
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公开(公告)号：US20200295717A1
公开(公告)日：2020-09-17
申请号：US16351916
申请日：2019-03-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi ARAYASHIKI , Satoshi GOTO , Satoshi TANAKA , Yasuhisa YAMAMOTO
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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公开(公告)号：US20240321975A1
公开(公告)日：2024-09-26
申请号：US18734477
申请日：2024-06-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kenji SASAKI , Koji INOUE , Shinnosuke TAKAHASHI , Satoshi GOTO , Masao KONDO
IPC: H01L29/417 , H01L23/00 , H01L23/48 , H01L23/528 , H01L27/082 , H01L29/205 , H01L29/737
CPC classification number: H01L29/41708 , H01L23/481 , H01L23/5286 , H01L24/13 , H01L27/0823 , H01L29/205 , H01L29/7371 , H01L2224/13026 , H01L2924/10329 , H01L2924/10338 , H01L2924/13051
Abstract: A mesa structure including a collector layer, a base layer, and an emitter layer laminated on a substrate is formed. An emitter electrode electrically connected to the emitter layer is disposed on the mesa structure. Moreover, a base electrode electrically connected to the base layer is disposed on the mesa structure. A collector electrode is disposed in such a manner as to surround the mesa structure in plan view, and the collector electrode is electrically connected to the collector layer. The emitter electrode includes a first part and a second part. In plan view, the base electrode surrounds the first part of the emitter electrode, and the second part of the emitter electrode surrounds the base electrode.
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公开(公告)号：US20240014296A1
公开(公告)日：2024-01-11
申请号：US18474088
申请日：2023-09-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shigeki KOYA , Masao KONDO , Shaojun MA , Satoshi GOTO , Kenji SASAKI , Takayuki TSUTSUI , Kazuhito NAKAI
IPC: H01L29/737 , H01L29/06 , H01L27/082 , H01L29/417 , H01L29/423
CPC classification number: H01L29/737 , H01L29/0603 , H01L27/082 , H01L29/41708 , H01L29/42304
Abstract: In a semiconductor device, plural cells are disposed side by side on a substrate in a first direction. Each of the plural cells includes a bipolar transistor, an emitter electrode contained in a base layer of the bipolar transistor as viewed from above, and a base electrode. The bipolar transistors of the plural cells are connected in parallel with each other. Among the plural cells, the breakdown resistance of at least one second cell, which is other than a first cell disposed at each end, is higher than that of the first cell. It is possible to provide a semiconductor device that can reduce the deterioration of the breakdown resistance when flip-chip mounting is employed, as well as when face-up mounting is employed.
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公开(公告)号：US20230020088A1
公开(公告)日：2023-01-19
申请号：US17955570
申请日：2022-09-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shigeru TSUCHIDA , Daerok OH , Takahiro KATAMATA , Satoshi GOTO , Mitsunori SAMATA , Yoshiki YASUTOMO
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
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Patent Agency Ranking
公开(公告)号：US20220108936A1
公开(公告)日：2022-04-07
申请号：US17494611
申请日：2021-10-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Takanori UEJIMA , Satoshi GOTO , Satoshi ARAYASHIKI
IPC: H01L23/367 , H01L23/66 , H01L23/31
Abstract: In a semiconductor module, a first conductive portion is raised on a lower surface of a first member to which a second member including a semiconductor element and being smaller than the first member in plan view is joined. A second conductive portion is raised at the second member in the same direction as the first conductive portion. The first and second members are mounted on a module substrate with the interposed first and second conductive portions. A sealing material is disposed on a mounting surface of the module substrate, while covering at least an area of the first member. The sealing material has a top surface facing in the same direction as the top surface of the first member and side surfaces connected to its top surface. A metal film is disposed on the top and side surfaces of the sealing material and side surfaces of the module substrate.
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公开(公告)号：US20220006437A1
公开(公告)日：2022-01-06
申请号：US17363627
申请日：2021-06-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisanori NAMIE , Satoshi GOTO , Aki SATO
Abstract: A power amplifying circuit includes a single-ended amplifier, a differential amplifier, a first balun transformer, a second balun transformer, and a first switching circuit. The single-ended amplifier operates in a first mode and a second mode different from the first mode. The differential amplifier operates in the second mode. The first balun transformer converts an unbalanced output signal from the single-ended amplifier into a differential signal and outputs the differential signal to the differential amplifier. The second balun transformer converts a balanced output signal from the differential amplifier into an unbalanced output signal. The first switching circuit outputs the unbalanced output signal from the single-ended amplifier in the first mode and outputs the unbalanced output signal from the second balun transformer in the second mode.
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公开(公告)号：US20210336592A1
公开(公告)日：2021-10-28
申请号：US17241581
申请日：2021-04-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi ARAYASHIKI , Satoshi TANAKA , Fumio HARIMA , Satoshi GOTO
Abstract: A power amplifier circuit includes a first amplifier circuit configured to amplify a first signal of a first frequency band and output a first amplified signal having a first power, a second amplifier circuit configured to amplify a second signal of the first frequency band or a second frequency band different from the first frequency band and output a second amplified signal having a second power different from the first power, and a first variable adjustment circuit disposed between the second amplifier circuit and a first circuit subsequent to the second amplifier circuit, the first variable adjustment circuit being configured to be capable of adjusting a first impedance of the first circuit seen from the second amplifier circuit.
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公开(公告)号：US20210288680A1
公开(公告)日：2021-09-16
申请号：US17189291
申请日：2021-03-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hidetaka TAKAHASHI , Satoshi GOTO , Yoshiki YASUTOMO , Daerok OH , Yuuto AOKI , Yoshihiro DAIMON , Naoya MATSUMOTO
IPC: H04B1/04
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.
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公开(公告)号：US20190123003A1
公开(公告)日：2019-04-25
申请号：US16157469
申请日：2018-10-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisanori NAMIE , Satoshi GOTO , Satoshi TANAKA
Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
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