Q-SILICON SYNTHESIS, PROPERTIES AND APPLICATIONS

    公开(公告)号:US20240351887A1

    公开(公告)日:2024-10-24

    申请号:US18642319

    申请日:2024-04-22

    Abstract: Various examples are provided related to Q-silicon, Q-carbon and combinations thereof, and synthesis, properties and applications of Q-silicon and Q-carbon. In one example, a method includes forming a layer of amorphous silicon; melting at least a portion of the layer of amorphous silicon in an undercooled state; and forming Q-silicon by quenching the melted amorphous silicon from the undercooled state. In another example, a Q-silicon includes a random arrangement of tetrahedra, the tetrahedra including dangling bonds, unpaired spins or both. The atomic structure of the Q-silicon is based upon time in an undercooled state before quenching. In another example, a battery anode includes Q-silicon mixed with a polyvinylidene difluoride (PVDF) binder, the Q-silicon including a random arrangement of tetrahedra, the tetrahedra comprising dangling bonds, unpaired spins or both. The battery anode can include Q-carbon and Q-silicon mixed with the PVDF binder.

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