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公开(公告)号：US07947556B2
公开(公告)日：2011-05-24
申请号：US12801806
申请日：2010-06-25
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US20100266876A1
公开(公告)日：2010-10-21
申请号：US12746414
申请日：2008-12-03
申请人： Hideo Yamamoto
发明人： Hideo Yamamoto
IPC分类号： H01M14/00
CPC分类号： H01M8/247 , H01M8/04559 , H01M8/04589 , H01M8/04619 , H01M8/04776 , H01M8/0612 , H01M8/0618 , H01M8/2475 , H01M2008/1095 , H01M2250/10 , H01M2250/405 , Y02B90/14 , Y02B90/16
摘要： There is provided a fuel cell power generation system in which power loss in a power line electrically connecting a stack and a power conversion circuit, thereby attaining high power generation efficiency. A reformer 6 and the stack 7 are disposed in a main body package 2. Stack output terminals 31 are provided in both ends in a stacking direction of the stack 7. A power conversion circuit 24 is disposed in the main body package 2 and arranged in the proximity to the stack 2. Power conversion circuit input terminals 32 are provided on the power conversion circuit 24 and arrayed in a direction parallel to the stacking direction of the stack. Stack output lines 27 electrically connect the stack output terminals 31 and the power conversion circuit input terminals 32.
摘要翻译： 提供一种燃料电池发电系统，其中电力线路中的电力线路中的电力损失电连接堆叠和电力转换电路，从而实现高的发电效率。 重整器6和堆叠7设置在主体包装2中。堆叠输出端子31沿堆叠7的层叠方向设置在两端。电源转换电路24设置在主体包装2中，并且布置在 电源转换电路输入端子32设置在电力转换电路24上，并且沿平行堆叠方向的方向排列。 堆叠输出线27将堆叠输出端子31和功率转换电路输入端子32电连接。
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23.发明授权Process for production of fatty acid alkyl ester and production apparatus for fatty acid alkyl ester 有权脂肪酸烷基酯的制造方法和脂肪酸烷基酯的制造装置公开(公告)号：US07812187B2
公开(公告)日：2010-10-12
申请号：US12162871
申请日：2007-01-26
IPC分类号： C11B3/00
CPC分类号： B01J23/02 , B01J37/06 , C07C67/03 , C10L1/026 , C11C3/003 , C11C3/10 , Y02E50/13 , C07C69/52
摘要： An object of the present invention is to provide a method for producing an alkyl ester of a fatty acid from a fat or oil, of which main component is a triglyceride, and an alkyl alcohol under mild conditions in a high reaction efficiency, and the alkyl ester of a fatty acid can be effectively utilized as a diesel fuel oil, an industrial raw material or the like, the method further being capable of utilizing on an industrial scale, in which post-treatment steps for removing a catalyst component can be simplified or omitted. For this purpose, the method for producing an alkyl ester of a fatty acid of this invention includes the step of carrying out a transesterification reaction between a fat or oil and an alcohol in the presence of a base catalyst containing calcium oxide, characterized in that the method includes the step of contacting the base catalyst with the alcohol, to carry out an activation treatment thereof in advance of the reaction.
摘要翻译： 本发明的目的是提供一种在温和条件下以高反应效率从主要成分为甘油三酯的脂肪或油中生产脂肪酸的烷基酯和烷基醇的方法， 脂肪酸的酯可以有效地用作柴油燃料油，工业原料等，该方法还能够以工业规模利用，其中可以简化用于除去催化剂组分的后处理步骤，或者 省略 为此，本发明的脂肪酸的烷基酯的制造方法包括在含有氧化钙的碱性催化剂的存在下，在脂肪或油与醇之间进行酯交换反应的步骤，其特征在于， 方法包括使碱催化剂与醇接触的步骤，在反应前进行活化处理。
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公开(公告)号：US07776693B2
公开(公告)日：2010-08-17
申请号：US11905078
申请日：2007-09-27
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US07704827B2
公开(公告)日：2010-04-27
申请号：US11984043
申请日：2007-11-13
IPC分类号： H01L21/8242
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/66734
摘要： An epitaxial layer is formed on an n+ semiconductor substrate by epitaxial growth. A gate trench is formed to the surface of gate trench so that the bottom of gate trench reaches middle of the epitaxial layer. A gate insulator is formed on the inner wall of gate trench and a polysilicon is formed in the gate trench with the gate insulator interposed therebetween. An HTO film is formed on the surface of the polysilicon and the n− epitaxial layer. At this time, an ion plantation is performed to the epitaxial layer through the HTO film. Hence, a p diffused base layer, an n+ diffused source layer, an n+ diffused source layer is formed. A CVD oxide film is formed on the HTO film. After a BPSG having flowability is deposited on the CVD oxide film, the BPSG film is planarized with a heat treatment of 900-1100 degree Celsius.
摘要翻译： 通过外延生长在n +半导体衬底上形成外延层。 栅极沟槽形成在栅极沟槽的表面，使得栅极沟槽的底部到达外延层的中间。 栅极绝缘体形成在栅极沟槽的内壁上，并且栅极沟槽中形成多晶硅，栅极绝缘体插入其间。 在多晶硅和n外延层的表面上形成HTO膜。 此时，通过HTO膜对外延层进行离子种植。 因此，形成p扩散基极层，n +扩散源极层，n +扩散源极层。 在HTO膜上形成CVD氧化膜。 在具有流动性的BPSG沉积在CVD氧化物膜上之后，通过900-1100摄氏度的热处理将BPSG膜平坦化。
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公开(公告)号：US07591206B2
公开(公告)日：2009-09-22
申请号：US11069548
申请日：2005-03-02
申请人： Hideo Yamamoto , Hiroshi Asano
发明人： Hideo Yamamoto , Hiroshi Asano
CPC分类号： B25J9/101 , Y10T74/20305 , Y10T74/2063
摘要： A mechanical stopper offers a relative rotation range exceeding 360°, scarcely generating abrasion powder and the like and having a simple structure. The stopper apparatus has a rotation axis section in which relative rotation is carried out between two members around one rotation axis, for restricting the rotation angle of one of the members with respect to the other member. The stopper apparatus has a contact piece provided on the member and two support members and are provided standing on the other member with a clearance therebetween. A band-shaped elastic member is layered across between the above-mentioned two support members, and the contact piece contacts the elastic member to stop the rotation of the member.
摘要翻译： 机械止动器提供超过360°的相对旋转范围，几乎不产生磨损粉末等并且具有简单的结构。 止动装置具有旋转轴线部分，其中围绕一个旋转轴线在两个部件之间进行相对旋转，以限制其中一个部件相对于另一个部件的旋转角度。 止动装置具有设置在构件上的接触片和两个支撑构件，并且设置在另一构件上，间隔开。 带状弹性构件跨越上述两个支撑构件之间层叠，并且接触片接触弹性构件以停止构件的旋转。
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公开(公告)号：US20080081422A1
公开(公告)日：2008-04-03
申请号：US11905078
申请日：2007-09-27
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/66734
摘要： A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.
摘要翻译： 一种制造半导体装置的方法包括在半导体层中形成沟槽，在沟槽内部形成栅电极，在沟槽内部的栅电极上形成热氧化膜，在内部的热氧化膜上形成硅酸盐玻璃膜 沟槽，在半导体层内部形成体区，并且在身体区域上形成源区。 该方法提供了具有减小的通道长度波动和低导通电阻的半导体装置。
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公开(公告)号：US07184558B2
公开(公告)日：2007-02-27
申请号：US09986695
申请日：2001-11-09
申请人： Hideo Yamamoto , Yoshifumi Fujino
发明人： Hideo Yamamoto , Yoshifumi Fujino
IPC分类号： H03G1/00
CPC分类号： H04S7/30 , H04R2499/13
摘要： A volume controller for controlling volume balance between a front speaker and a rear speaker located within a vehicle, includes a fade volume computing unit for computing an amplifying factor k1 of an input signal for providing an increased volume at the rear or front speaker by the volume at a prescribed position within the vehicle which is equal to an decreased volume in the front or rear speaker when a signal supplied to the front or rear speaker is attenuated by an attenuating factor K1; and a control unit for multiplying the signal supplied to the rear or front speaker by k1 when a signal supplied to the front or rear speaker is attenuated by K1. In this configuration, a volume controller can form an acoustic field with a sense of realism when volume adjustment is preformed in a to-and-fro direction.
摘要翻译： 用于控制位于车辆内的前置扬声器和后置扬声器之间的音量平衡的音量控制器包括：淡入淡出量计算单元，用于计算输入信号的放大系数k 1，以便在后方或前置扬声器处提供增加的音量 当提供给前置扬声器或后置扬声器的信号衰减衰减因子K 1时，在车辆内的规定位置处的体积等于前扬声器或后扬声器的体积减小; 以及控制单元，用于当提供给前扬声器或后扬声器的信号衰减K 1时，将提供给后扬声器或前扬声器的信号乘以k 1。 在这种结构中，当在一个往复的方向进行音量调节时，音量控制器可以形成具有现实感的声场。
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公开(公告)号：US20060226475A1
公开(公告)日：2006-10-12
申请号：US11191929
申请日：2005-07-29
申请人： Hideo Yamamoto , Kenya Kobayashi
发明人： Hideo Yamamoto , Kenya Kobayashi
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/456 , H01L29/66727 , H01L29/66734
摘要： A MOSFET has a base layer and a source layer in a cell surrounded by a trench gate formed in a semiconductor substrate. A trench contact is formed through the source layer and the base layer. The gate is polygonal such as square. The trench contact is thin and linear so as to increase embedding characteristics. Further, the trench contact is ring or cross shaped so as to reduce a source length.
摘要翻译： MOSFET在由半导体衬底中形成的沟槽栅包围的单元中具有基极层和源极层。 通过源极层和基极层形成沟槽接触。 门是多边形，如正方形。 沟槽接触是薄且线性的，以增加嵌入特性。 此外，沟槽接触是环形或十字形的，以便减少源长度。
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30.发明授权公开(公告)号：US06869111B2
公开(公告)日：2005-03-22
申请号：US10201932
申请日：2002-07-25
申请人： Kunio Goto , Shigeo Nagasaku , Hideo Yamamoto
发明人： Kunio Goto , Shigeo Nagasaku , Hideo Yamamoto
IPC分类号： C10M109/02 , C10M111/04 , C10M121/02 , C10M129/16 , C10M135/06 , C10M135/20 , C10M137/02 , C10M137/04 , C10M137/10 , C10M143/02 , C10M143/04 , C10M143/16 , C10M145/14 , C10M149/18 , C10M159/20 , C10M159/22 , C10M159/24 , C10M165/00 , C10M167/00 , C10M169/04 , C10N10/04 , C10N10/12 , C10N20/00 , C10N20/06 , C10N30/06 , C10N30/12 , C10N40/00 , C10N40/34 , C10N50/02 , E21B17/042 , F16L15/04 , F16L35/00
CPC分类号： C10M111/04 , C10M159/20 , C10M165/00 , C10M167/00 , C10M169/042 , C10M169/047 , C10M169/048 , C10M2203/065 , C10M2203/1006 , C10M2205/022 , C10M2205/0225 , C10M2205/024 , C10M2205/04 , C10M2205/043 , C10M2207/028 , C10M2207/0285 , C10M2207/126 , C10M2207/262 , C10M2207/2623 , C10M2207/289 , C10M2207/40 , C10M2209/084 , C10M2209/0845 , C10M2217/044 , C10M2219/044 , C10M2219/046 , C10M2219/0463 , C10M2219/089 , C10M2223/04 , C10M2223/045 , C10N2210/02 , C10N2220/082 , C10N2230/06 , C10N2230/12 , C10N2230/52 , C10N2250/121 , C10N2280/00 , F16L15/004 , F16L58/182
摘要： A lubricating coating composition in which at least one basic lubricant selected from a basic sulfonate, a basic salicylate, and a basic phenate is dissolved in a volatile solvent is applied to the frictional surface of a box and a pin constituting a threaded joint for oil well pipes. The composition may further contain one or more of a thermoplastic resin powder, another lubricant, and an extreme pressure agent. The surface roughness of the frictional surfaces preferably has an Rmax in the range of 5-40 micrometers.
摘要翻译： 将其中至少一种选自碱性磺酸盐，碱性水杨酸盐和碱性酚盐的碱性润滑剂溶解在挥发性溶剂中的润滑涂料组合物施加到构成油井螺纹接头的箱体和销的摩擦面上 管道。 组合物还可以含有一种或多种热塑性树脂粉末，另一种润滑剂和极压剂。 摩擦面的表面粗糙度优选具有5-40微米范围内的Rmax。
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