公开(公告)号：US12040317B2

公开(公告)日：2024-07-16

申请号：US17541761

申请日：2021-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Brandl ,  Andreas Dobner ,  Matthias Goldbach ,  Sebastian Wittmann ,  Uli Hiller ,  Markus Klein ,  Thomas Schwarz ,  Andreas Waldschik ,  Michael Wittmann ,  Matthias Bruckschloegl ,  Stefan Groetsch ,  Rainer Huber ,  Peter Brick ,  Ludwig Hofbauer

IPC: H04W72/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H04W72/51 ,  B60J3/00 ,  B60K35/00 ,  B60K35/60 ,  B62J50/22

CPC classification number: H01L25/0756 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H04W72/20 ,  H04W72/51 ,  B60J3/00 ,  B60K35/00 ,  B60K35/60 ,  B60K2370/785 ,  B62J50/22

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

公开(公告)号：US10553748B2

公开(公告)日：2020-02-04

申请号：US15307815

申请日：2015-05-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adam Bauer ,  Wolfgang Mönch ,  David Racz ,  Michael Wittmann ,  Dominik Schulten ,  Andreas Löffler

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/62 ,  H01L33/30 ,  H01L33/32 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  G02F1/1335

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

公开(公告)号：US10418515B2

公开(公告)日：2019-09-17

申请号：US15746625

申请日：2016-07-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Wicke ,  Michael Wittmann

IPC: H01L33/08 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/58

Abstract: An optoelectronic lighting device includes a black housing including a cavity, wherein the cavity includes a base, a semiconductor component is arranged on the base of the cavity with an underside of a main body facing the base, and the cavity is filled with a reflective material from the base up to a predetermined height, which is smaller than a height of a top side of the main body relative to the base of the cavity such that electromagnetic radiation emerging from the main body through side faces may be reflected by the reflective material back in the direction of the side faces to couple reflected electromagnetic radiation into the main body such that at least part of the electromagnetic radiation coupled in may emerge again from the main body through the top side of the main body.

公开(公告)号：US10049967B2

公开(公告)日：2018-08-14

申请号：US15737525

申请日：2016-06-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Brandl ,  Ion Stoll ,  Michael Wittmann

IPC: H01L33/00 ,  H01L23/495 ,  H01L33/62 ,  H01L33/48 ,  H01L25/16 ,  H01L33/60 ,  H01L25/075 ,  H01L33/50 ,  H01L31/0203

Abstract: A method of producing an optoelectronic component includes providing a lead frame having an upper side including a contact region and a chip reception region raised relative to the contact region; arranging an electrically conductive element on the contact region; embedding the lead frame in a molded body, wherein the contact region is covered by the molded body, and the chip reception region and the electrically conductive element remain accessible on an upper side of the molded body; arranging an optoelectronic semiconductor chip on the chip reception region; and connecting the optoelectronic semiconductor chip and the electrically conductive element by a bonding wire.