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公开(公告)号：US10854793B2
公开(公告)日：2020-12-01
申请号：US16098172
申请日：2017-05-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： David Racz , Matthias Sperl
Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.
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公开(公告)号：US10243115B2
公开(公告)日：2019-03-26
申请号：US15776686
申请日：2016-11-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust , David Racz , Christopher Kölper
Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.
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3.发明授权公开(公告)号：US10103296B2
公开(公告)日：2018-10-16
申请号：US15515766
申请日：2015-10-01
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Frank Singer , Britta Goeoetz , David Racz , Matthias Sperl
Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.
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公开(公告)号：US20180033931A1
公开(公告)日：2018-02-01
申请号：US15730214
申请日：2017-10-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Ramchen , David Racz , Hans-Christoph Gallmeier , Stefan Grötsch , Simon Jerebic
IPC: H01L33/60 , H01L33/46 , H01L23/29 , H01L33/62 , H01L33/54 , H01L23/31 , H01L25/16 , H01L25/075 , H01L23/00 , H01L23/60 , H01L31/0232
CPC classification number: H01L33/60 , H01L23/295 , H01L23/3121 , H01L23/60 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0753 , H01L25/167 , H01L31/0232 , H01L33/46 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01079 , H01L2924/05032 , H01L2924/05432 , H01L2924/12036 , H01L2924/181 , H01L2924/207 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/45099
Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.
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公开(公告)号：US20170263830A1
公开(公告)日：2017-09-14
申请号：US15509507
申请日：2015-09-08
Applicant: OSRAM OPTO Semiconductors GmbH
Inventor： David Racz , Michael Zitzlsperger , Günter Spath
CPC classification number: E05F15/73 , E05F15/40 , E05F2015/765 , E05Y2400/54 , E05Y2800/352 , E05Y2900/10 , E06B9/11 , E06B9/171 , E06B2009/6836 , H01L25/0753 , H01L25/167 , H01L33/44 , H01L33/486 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/73215 , H01L2924/181 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.
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Patent Agency Ranking
公开(公告)号：US10553748B2
公开(公告)日：2020-02-04
申请号：US15307815
申请日：2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adam Bauer , Wolfgang Mönch , David Racz , Michael Wittmann , Dominik Schulten , Andreas Löffler
IPC: H01L33/06 , H01L33/50 , H01L33/62 , H01L33/30 , H01L33/32 , H01L33/56 , H01L33/58 , H01L33/60 , G02F1/1335
Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.
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公开(公告)号：US10276762B2
公开(公告)日：2019-04-30
申请号：US15509507
申请日：2015-09-08
Applicant: OSRAM OPTO Semiconductors GmbH
Inventor： David Racz , Michael Zitzlsperger , Günter Spath
IPC: H01L33/58 , H01L33/48 , H01L33/50 , H01L33/62 , H01L33/44 , H01L33/54 , H01L25/075 , H01L25/16 , H01L33/56
CPC classification number: H01L33/58 , E05F15/40 , E05F15/73 , E05F2015/765 , E05Y2400/54 , E05Y2800/352 , E05Y2900/10 , E06B9/11 , E06B9/171 , E06B2009/6836 , H01L25/0753 , H01L25/167 , H01L33/44 , H01L33/486 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2224/48091 , H01L2224/73215 , H01L2924/181 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.
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公开(公告)号：US10217915B2
公开(公告)日：2019-02-26
申请号：US15730214
申请日：2017-10-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Ramchen , David Racz , Hans-Christoph Gallmeier , Stefan Grötsch , Simon Jerebic
IPC: H01L33/60 , H01L33/46 , H01L23/29 , H01L23/31 , H01L23/00 , H01L25/075 , H01L31/0232 , H01L33/54 , H01L33/62 , H01L25/16 , H01L23/60 , H01L33/56
Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.
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9.发明申请公开(公告)号：US20190013451A1
公开(公告)日：2019-01-10
申请号：US16066552
申请日：2017-01-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Luca Haiberger , David Racz , Matthias Sperl
IPC: H01L33/62 , H01L33/64 , H01L31/02 , H01L31/024
Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.
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公开(公告)号：US20180358516A1
公开(公告)日：2018-12-13
申请号：US15776686
申请日：2016-11-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust , David Racz , Christopher Kölper
CPC classification number: H01L33/504 , H01L25/0756 , H01L33/08 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.
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