摘要:
A synchronous signal generator is provided that contains a first and second counting and delay circuit, which both are in a subhierarchical position with respect to a reset signal synchronization/delay circuit. The reset signal synchronization/delay circuit and the first and second counting and delay circuit are triggered by a basic clock signal or a first clock signal derived therefrom to be identical in frequency and phase, and contain counting means whose initial and final counting state are adjustable in order to set, in a clocked fashion, the temporal positions of a first and second load signal that are output by the first counting and delay circuit as well as of a FIFO read clock signal that is output by the second counting and delay circuit and thus adapt them to the temporal requirements of a semiconductor memory system containing the synchronous signal generator.
摘要:
A memory device comprising a memory cell array; an input circuit for receiving command data and providing drive signals to the memory cell array; an output buffer for buffering data read out from the memory cell array; and a timer for driving the output buffer such that the buffered data are provided at an output after a predetermined time interval has elapsed, the predetermined time interval beginning with the provision of the drive signals.
摘要:
A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.
摘要:
A circuit includes a data conversion circuit including a first input configured to receive a first serial data stream, a second input configured to receive a second serial data stream, and a third input configured to receive a third serial data stream. A first sampling circuit is coupled to the first, second, and third inputs and is configured to sample the first to third data streams based on a plurality of clock signals and to generate a corresponding plurality of first sampled signals. A second sampling circuit is configured to sample the plurality of first sampled signals based on a further clock signal. The further clock signal has a clock frequency different from a clock frequency underlying the first to third serial data streams.
摘要:
A circuit includes a data conversion circuit including a first input configured to receive a first serial data stream, a second input configured to receive a second serial data stream, and a third input configured to receive a third serial data stream. A first sampling circuit is coupled to the first, second, and third inputs and is configured to sample the first to third data streams based on a plurality of clock signals and to generate a corresponding plurality of first sampled signals. A second sampling circuit is configured to sample the plurality of first sampled signals based on a further clock signal. The further clock signal has a clock frequency different from a clock frequency underlying the first to third serial data streams.
摘要:
A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.
摘要:
The present invention relates to a method and apparatus for generating an output signal in dependence on a phase difference between two periodic signals. The present invention is particularly useful in phase locked loops and delay locked loops, in which a controllable oscillator or a controllable delay device is controlled on the basis of the phase difference determined by means of phase detection, in such a way that a control signal can be obtained, the phase lag or frequency of which has a firm relationship to the reference signal.
摘要:
A memory device comprising a memory cell array; an input circuit providing drive signals to the memory cell array dependent on externally received command data; an output buffer buffering data read out from the memory cell array; and a timer driving the output buffer such that the buffered data are provided at an output after an adjustable time interval has elapsed, the adjustable time interval beginning with the provision of the drive signals.
摘要:
A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.
摘要:
Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.