摘要:
The present invention relates to a method and apparatus for generating an output signal in dependence on a phase difference between two periodic signals. The present invention is particularly useful in phase locked loops and delay locked loops, in which a controllable oscillator or a controllable delay device is controlled on the basis of the phase difference determined by means of phase detection, in such a way that a control signal can be obtained, the phase lag or frequency of which has a firm relationship to the reference signal.
摘要:
A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.
摘要:
A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.
摘要:
A memory system and method is disclosed. In one embodiment, the memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.
摘要:
A synchronization and data recovery device (SuD) for clock-synchronized recovery of data bits in a data stream is provided, which is particularly suitable for improved backward identification of data in serial receiver interfaces of high-speed semiconductor memory modules and/or memory controller modules with a low data density. The SuD includes a sampling unit, a data adjustment unit, a digital monitoring unit, a phase lock detector unit, a phase generator, an FIR low-pass filter and a data recovery decision unit. After synchronization of the values that have been sampled by the sampling unit in the data adjustment unit, these values are filtered in the FIR low-pass filter unit, which indicates a greater tolerance with respect to fluctuations in the ideal sampling time, in that it uses sample values of the previous symbol and of the subsequent symbol in addition to the sample values of the symbol to be identified.
摘要:
A semiconductor memory system for the transfer of write and read data signals among interface circuits includes at least one memory device, a memory controller unit and, optionally, a register unit of a semiconductor memory system, wherein the data signals are each transferred in signal bursts of a specific burst length. The system is characterized in that a number of additional bits extending the burst length are transferred together with at least every nth signal burst.
摘要:
Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.
摘要:
The invention relates to a controller for generating control signals (evload_o, odload_o, st_chgclk_o, clk_o , clkorfiford_i) synchronous with a continuous clock signal (clk_hr_i) input to it for a device (1) to be controlled synchronously with the clock signal (clk_hr_i), wherein the controller (SE) has: register means for registering at least one set signal (st_load_i, st_fiford_i), comprising a plurality of bit positions, counting means for counting edges of the clock signal (clk_hr_i) depending on one or a plurality of set signals respectively registered in the register means, and synchronization and output means for synchronizing a value counted by the counting means with the clock signal (clk_hr_i) and the registered set signal and outputting at least one of the control signals, wherein the register means, the counting means and the synchronization and output means are configured and connected to one another in such a way that the output control signal(s), depending on the respectively registered set signal, occupies (occupy) one of a plurality of temporal positions with a respective phase difference of an integral multiple of half a clock cycle synchronously with the leading or trailing edge of the clock signal. The controller can be applied in particular for controlling the synchronous parallel-serial converter for converting a parallel input signal comprising k bit positions into a serial output signal sequence synchronously with the clock signal (clk_hr_i), which converter is provided in a transmitting circuit in the interface circuit of a very fast DDR DRAM semiconductor memory component of the coming memory generation (e.g. DDR4).
摘要:
A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.
摘要:
The present invention relates to a memory system having a memory device with two clock lines. One embodiment of the present invention provides a memory system comprising at least one memory device, a memory controller to control operation of the memory device, a first clock line which extends from a write clock output of the memory controller to a clock port of the memory device to provide a clock signal to the memory device, and a second clock line which extends from the clock port of the memory device to a read clock input of the memory controller to forward the clock signal applied to the clock port of the memory device back to a read clock input of the memory controller. The memory device may further comprise a synchronization circuit adapted to receive the clock signal from the memory controller and to, provide an output data synchronized to the forwarded clock signal.