公开(公告)号：US09131634B2

公开(公告)日：2015-09-08

申请号：US13677054

申请日：2012-11-14

Applicant: QUALCOMM Incorporated

Inventor： Aristotele Hadjichristos ,  Gurkanwal Singh Sahota ,  Steven C Ciccarelli ,  David J Wilding ,  Ryan D Lane ,  Christian Holenstein ,  Milind P Shah

IPC: H04B5/00 ,  H05K3/36 ,  H04B1/40 ,  H05K13/04 ,  H01L23/66 ,  H01L25/16

CPC classification number: H05K3/368 ,  H01L23/66 ,  H01L25/16 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15321 ,  H04B1/40 ,  H05K13/0465 ,  Y10T29/49126 ,  Y10T29/5317 ,  H01L2924/00

Abstract: A radio frequency package on package (PoP) circuit is described. The radio frequency package on package (PoP) circuit includes a first radio frequency package. The first radio frequency package includes radio frequency components. The radio frequency package on package (PoP) circuit also includes a second radio frequency package. The second radio frequency package includes radio frequency components. The first radio frequency package and the second radio frequency package are in a vertical configuration. The radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.

Abstract translation: 描述了封装（PoP）电路上的射频封装。 封装（PoP）电路上的射频封装包括第一射频封装。 第一个射频包包括射频分量。 封装（PoP）电路上的射频封装还包括第二个射频封装。 第二个射频包包括射频分量。 第一射频包和第二射频包处于垂直配置。 第一个射频封装上的射频分量被设计为减少接地电感的影响。

公开(公告)号：US20150050901A1

公开(公告)日：2015-02-19

申请号：US13720851

申请日：2012-12-19

Applicant: QUALCOMM INCORPORATED

Inventor： Chang-Ho Lee ,  Woonyun Kim ,  Minsik Ahn ,  Jeongwon Cha ,  Yunseo Park ,  Aristotele Hadjichristos

IPC: H04B1/04

CPC classification number: H04B1/0458 ,  H03F1/0277 ,  H03F3/72 ,  H03F2203/7239 ,  H03H7/38 ,  H04B1/0483

Abstract: Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.

Abstract translation: 示例性实施例涉及放大器模块，其可以包括包括第一放大器和第二放大器的发射路径。 示例性放大器模块还可以包括耦合在第一放大器和第二放大器之间的变压器，并且可切换地配置用于以第一模式将第一放大器与第二放大器串联耦合，并且以第二模式耦合第一放大器旁路第二放大器 。

公开(公告)号：US20140139288A1

公开(公告)日：2014-05-22

申请号：US13678923

申请日：2012-11-16

Applicant: QUALCOMM INCORPORATED

Inventor： Jeongwon Cha ,  Chang-Ho Lee ,  Aristotele Hadjichristos

IPC: H03F3/45

CPC classification number: H03F1/0277 ,  H03F1/223 ,  H03F1/523 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/61 ,  H03K17/102

Abstract: Techniques for providing adjustable gain in an amplifier. In an aspect, a composite amplifier having adjustable gain includes a plurality of amplifiers coupled in parallel, wherein each of the amplifiers may be turned on or off to adjust the overall gain of the composite amplifier. Each amplifier may include an input transistor and at least two cascode transistors. To turn each amplifier off, the gate voltage of a second or lowermost cascode transistor coupled to the input transistor may be grounded, and the gate voltage of a first cascode transistor coupled to the output voltage may be coupled to a first turn-off voltage to reduce the drain-to-gate voltage drop across the first cascode transistor. Further aspects provide for decoupling a capacitor coupled to the gates of the cascode transistors from AC ground when the amplifier is turned off

Abstract translation: 在放大器中提供可调增益的技术。 在一方面，具有可调增益的复合放大器包括并联耦合的多个放大器，其中每个放大器可被导通或关断以调整复合放大器的总体增益。 每个放大器可以包括输入晶体管和至少两个共源共栅晶体管。 为了关闭每个放大器，耦合到输入晶体管的第二或最低共源共栅晶体管的栅极电压可以接地，并且耦合到输出电压的第一共源共栅晶体管的栅极电压可以耦合到第一截止电压到 降低跨越第一共源共栅晶体管的漏极 - 栅极电压降。 另外的方面提供了当放大器关闭时将耦合到共源共栅晶体管的栅极的电容器与AC地耦合的去耦合