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    MEMRISTORS WITH INSULATION ELEMENTS AND METHODS FOR FABRICATING THE SAME
    21.
    发明申请
    MEMRISTORS WITH INSULATION ELEMENTS AND METHODS FOR FABRICATING THE SAME 有权
    具有绝缘元件的元件及其制造方法

    公开(公告)号：US20110017977A1

    公开(公告)日：2011-01-27

    申请号：US12509299

    申请日：2009-07-24

    申请人： Alexandre M. Bratkovski ,  Qiangfei Xia

    发明人： Alexandre M. Bratkovski ,  Qiangfei Xia

    IPC分类号： H01L29/12 ,  H01L29/86

    CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  Y10S438/90

    摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface.

    摘要翻译： 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中，忆阻器装置包括设置在第一电极和第二电极之间的有源区。 该装置包括设置在第一电极和有源区域的第一表面的外部之间的第一绝缘元件。 第一绝缘元件配置有一个或多个开口，第一电极通过该开口与活性区域物理接触。 该装置还包括设置在第二电极和有源区域的第二表面的外部之间的第二绝缘元件。 第二绝缘元件配置有一个或多个开口，第二电极通过该开口与第二表面物理接触。

    Self-Repair and Enhancement of Nanostructures by Liquification Under Guiding Conditions
    22.
    发明申请
    Self-Repair and Enhancement of Nanostructures by Liquification Under Guiding Conditions 有权
    在引导条件下通过液化自我修复和增强纳米结构

    公开(公告)号：US20080248276A1

    公开(公告)日：2008-10-09

    申请号：US11915090

    申请日：2006-05-29

    申请人： Stephen Y. Chou ,  Qiangfei Xia

    发明人： Stephen Y. Chou ,  Qiangfei Xia

    IPC分类号： B29C59/16 ,  B32B5/00

    CPC分类号： B81C1/00111 ,  B81C1/00634 ,  B81C2201/0149 ,  B82Y30/00 ,  H01L21/76892 ,  H01L21/76894 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, the structure (1OA, 10B) of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to solidify. Advantageous guiding conditions include adjacent spaced apart or contacting surfaces (12, 13A, 13B) to control surface structure and preserve verticality and unconstrained boundaries to permit smoothing of edge roughness. In an advantageous embodiment, a flat planar surface (12) is disposed overlying a patterned nanostructure surface (13A, 13B) and the surface (13A, 13B) is liquified by a high intensity light source to repair or enhance the nanoscale features.

    摘要翻译： 根据本发明，通过在存在适当指导条件的情况下液化图案化装置来修复和/或增强图案化纳米级或近似纳米级装置（“纳米结构”）的结构（10A，10B） 时间，然后允许设备凝固。 有利的指导条件包括相邻的间隔开的或接触的表面（12,13A，13B）以控制表面结构并保持垂直度和无约束边界以允许边缘粗糙度的平滑化。 在有利的实施例中，平坦的平坦表面（12）设置在覆盖图案化的纳米结构表面（13A，13B）上，并且表面（13A，13B）被高强度光源液化以修复或增强纳米尺度 特征。

    Switchable two-terminal devices with diffusion/drift species
    24.
    发明授权
    Switchable two-terminal devices with diffusion/drift species 有权
    具有扩散/漂移物种的可切换双端子器件

    公开(公告)号：US08879300B2

    公开(公告)日：2014-11-04

    申请号：US13384853

    申请日：2010-04-22

    申请人： Jianhua Yang ,  Wei Wu ,  Qiangfei Xia

    发明人： Jianhua Yang ,  Wei Wu ,  Qiangfei Xia

    IPC分类号： G11C11/00 ,  H01L45/00 ,  B82Y10/00 ,  H01L27/102

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L45/08

    摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.

    摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。

    SWITCHABLE TWO-TERMINAL DEVICES WITH DIFFUSION/DRIFT SPECIES
    27.
    发明申请
    SWITCHABLE TWO-TERMINAL DEVICES WITH DIFFUSION/DRIFT SPECIES 有权
    具有扩张/转移物种的可切换的两端装置

    公开(公告)号：US20130051121A1

    公开(公告)日：2013-02-28

    申请号：US13384853

    申请日：2010-04-22

    申请人： Jianhua Yang ,  Wei Wu ,  Qiangfei Xia

    发明人： Jianhua Yang ,  Wei Wu ,  Qiangfei Xia

    IPC分类号： H01L45/00 ,  G11C11/21 ,  B82Y99/00

    CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L45/08

    摘要： Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.

    摘要翻译： 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面，双端器件（600）包括第一电极（602），第二电极（604）和设置在第一电极和第二电极之间的有源区（606）。 有源区包括移动掺杂剂（608）和快速漂移的离子物质（610）。 当向双端器件施加写入电压以切换器件电导时，快速漂移的离子物质漂移到二极管状电极/有源区接口中，暂时增加跨接口的电导。

    Negative index material-based modulators and methods for fabricating the same
    29.
    发明授权
    Negative index material-based modulators and methods for fabricating the same 有权
    负基于材料的调制剂及其制造方法

    公开(公告)号：US08107149B2

    公开(公告)日：2012-01-31

    申请号：US12387169

    申请日：2009-04-29

    申请人： Wei Wu ,  Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Jingjing Li ,  Qiangfei Xia

    发明人： Wei Wu ,  Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Jingjing Li ,  Qiangfei Xia

    IPC分类号： G02B26/00 ,  G02F1/01

    CPC分类号： G02F1/01 ,  G02F3/02 ,  G02F2202/30 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/949 ,  Y10S977/95

    摘要： Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.

    摘要翻译： 本发明的各种实施方案涉及外部的，电子可控的，负指数材料的调节剂。 一方面，外部调制器包括与电子信号源电子通信的负索引材料。 负索引材料接收来自电子信号源的电子信号编码数据和来自电磁辐射源的未调制载波。 电子信号的幅度变化在编码载波的幅度和/或相位中的数据的负指数材料中产生对应的有效折射率变化，以产生电磁信号。