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公开(公告)号：US12030773B2
公开(公告)日：2024-07-09
申请号：US17265451
申请日：2019-09-24
Applicant: Robert Bosch GmbH
Inventor： Friedjof Heuck , Jochen Tomaschko , Peter Schmollngruber , Thomas Friedrich , Volkmar Senz , Franziska Rohlfing
CPC classification number: B81C1/00238 , B81B7/0006 , G01L9/0041 , B81B2201/0264 , B81B2207/012 , B81B2207/07 , B81C2203/035 , B81C2203/0792
Abstract: A method for producing a wafer connection between a first and a second wafer. The method includes providing a first and second material for forming a eutectic alloy, providing a first wafer having a receiving structure for a die structure, filling the receiving structure with the first material, providing a second wafer having a die structure, the second material being situated on the die structure, providing a stop structure on the first and/or second wafer, so that when the two wafers are joined, a defined stop is provided, heating the first and second material at least to the eutectic temperature of the eutectic alloy, joining the first and second wafer so that the die structure is at least partly introduced into the receiving structure, the stop structure, the receiving structure, the die structure.
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公开(公告)号：US11978658B2
公开(公告)日：2024-05-07
申请号：US17456030
申请日：2021-11-22
Applicant: Robert Bosch GmbH
Inventor： Jochen Reinmuth , Peter Schmollngruber
IPC: H01L21/762 , B81B3/00 , B81C1/00 , H01L21/02
CPC classification number: H01L21/7624 , B81B3/0021 , B81C1/00182 , H01L21/02532 , H01L21/02595
Abstract: A method for manufacturing a polysilicon SOI substrate including a cavity. The method includes: providing a silicon substrate including a sacrificial layer thereon; producing a first polysilicon layer on the sacrificial layer; depositing a structuring layer on the first polysilicon layer; introducing trenches through the structuring layer, the first polysilicon layer, and the sacrificial layer up to the silicon substrate; producing a cavity in the silicon substrate by etching, an etching medium being conducted thereto through the trenches; producing a second polysilicon layer on the first polysilicon layer, the trenches being thereby closed. A micromechanical device is also described.
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公开(公告)号：US11976996B2
公开(公告)日：2024-05-07
申请号：US17282736
申请日：2019-12-18
Applicant: Robert Bosch GmbH
Inventor： Thomas Friedrich , Christoph Hermes , Hans Artmann , Heribert Weber , Peter Schmollngruber , Volkmar Senz
CPC classification number: G01L9/0073 , B81B7/02 , G01L7/082 , G01L9/0048 , B81B2201/0264
Abstract: A micromechanical component for a capacitive pressure sensor device, including a diaphragm that is stretched with the aid of a frame structure in such a way that a cantilevered area of the diaphragm spans a framed partial surface, and including a reinforcement structure that is formed at the cantilevered area. A first spatial direction oriented in parallel to the framed partial surface is definable in which the cantilevered area has a minimal extension, and a second spatial direction oriented in parallel to the framed partial surface and oriented perpendicularly with respect to the first spatial direction is definable in which the cantilevered area has a greater extension. The reinforcement structure is present at a first distance from the frame structure in the first spatial direction, and at a second distance in the second spatial direction, the second distance being greater than the first distance.
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公开(公告)号：US11912563B2
公开(公告)日：2024-02-27
申请号：US17287389
申请日：2019-12-13
Applicant: Robert Bosch GmbH
Inventor： Hans Artmann , Christoph Hermes , Heribert Weber , Jochen Reinmuth , Peter Schmollngruber , Thomas Friedrich
CPC classification number: B81B3/0072 , B81C1/00158 , G01L7/082 , G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81B2203/0307 , B81C2201/0101
Abstract: A micromechanical component, whose diaphragm is supported and has support structures on its inner diaphragm side. Each of the support structures includes a first and second edge element structure, and at least one intermediate element structure positioned between the first and second edge element structures. For each of the support structures, a plane of symmetry is definable, with respect to which at least the first edge element structure of the respective support structure and the second edge element structure of the respective support structure are specularly symmetric. In each of support structures, a first maximum dimension of its first edge element structure perpendicular to its plane of symmetry and a second maximum dimension of its second edge element structure perpendicular to its plane of symmetry are greater than the maximum dimension of its intermediate element structure perpendicular to its plane of symmetry.
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公开(公告)号：US20220390311A1
公开(公告)日：2022-12-08
申请号：US17831719
申请日：2022-06-03
Applicant: Robert Bosch GmbH
Inventor： Heribert Weber , Peter Schmollngruber
Abstract: A micromechanical component for a sensor device, including a substrate, at least one first counter-electrode, at least one first electrode adjustably situated on a side of the at least one first counter-electrode facing away from the substrate, and a capacitor sealing structure, which seals gas-tight an interior volume, including the at least one first counter-electrode present therein and the at least one first electrode present therein. The at least one first counter-electrode is fastened directly or indirectly to a frame structure fastened directly or indirectly to the substrate, and the frame structure framing a cavity, and the at least one first counter-electrode at least partially spanning the cavity in such a way that at least one gas is transferable between the cavity and the interior volume via at least one opening formed at and/or in the at least one first counter-electrode.
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Patent Agency Ranking
公开(公告)号：US20220328258A1
公开(公告)日：2022-10-13
申请号：US17715213
申请日：2022-04-07
Applicant: Robert Bosch GmbH
Inventor： Jochen Reinmuth , Matthew Lewis , Peter Schmollngruber
Abstract: A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer.
A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion.
A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.-
公开(公告)号：US20220002147A1
公开(公告)日：2022-01-06
申请号：US17291251
申请日：2019-12-13
Applicant: Robert Bosch GmbH
Inventor： Christoph Hermes , Hans Artmann , Heribert Weber , Peter Schmollngruber , Thomas Friedrich , Tobias Joachim Menold , Mawuli Ametowobla
IPC: B81C1/00
Abstract: A method for sealing entries in a MEMS element. The method includes: providing a functional layer having a functional region; producing a cavity underneath the functional region of the functional layer with the aid of a first entry outside of the functional region of the functional layer; sealing the first entry; producing a second entry to the cavity outside of the functional region of the functional layer; melting sealing material in the region of the second entry; and cooling off the melted sealing material to seal the second entry.
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公开(公告)号：US12230457B2
公开(公告)日：2025-02-18
申请号：US17715213
申请日：2022-04-07
Applicant: Robert Bosch GmbH
Inventor： Jochen Reinmuth , Matthew Lewis , Peter Schmollngruber
IPC: H01H1/00 , H01H1/06 , H01H11/00 , H01H11/06 , H01H59/00 , H01L21/3205 , H01L21/762
Abstract: A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer.
A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion.
A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.-
公开(公告)号：US12163851B2
公开(公告)日：2024-12-10
申请号：US17831719
申请日：2022-06-03
Applicant: Robert Bosch GmbH
Inventor： Heribert Weber , Peter Schmollngruber
Abstract: A micromechanical component for a sensor device, including a substrate, at least one first counter-electrode, at least one first electrode adjustably situated on a side of the at least one first counter-electrode facing away from the substrate, and a capacitor sealing structure, which seals gas-tight an interior volume, including the at least one first counter-electrode present therein and the at least one first electrode present therein. The at least one first counter-electrode is fastened directly or indirectly to a frame structure fastened directly or indirectly to the substrate, and the frame structure framing a cavity, and the at least one first counter-electrode at least partially spanning the cavity in such a way that at least one gas is transferable between the cavity and the interior volume via at least one opening formed at and/or in the at least one first counter-electrode.
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公开(公告)号：US12160215B2
公开(公告)日：2024-12-03
申请号：US17647611
申请日：2022-01-11
Applicant: Robert Bosch GmbH
Inventor： Friedjof Heuck , Marcus Pritschow , Markus Kuhnke , Peter Schmollngruber , Ricardo Zamora , Sebastien Loiseau , Stefan Majoni , Stefan Krause , Viktor Morosow
Abstract: A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.
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