摘要:
According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.
摘要:
According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.
摘要:
According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.
摘要:
The present invention aims to provide an external-electrode discharge lamp able to suppress luminance variation, a manufacturing method for the lamp, and a backlight unit. A lamp (10) of the present invention includes a glass tube (11) sealed at both ends, and electrodes (18) and (19) provided around outer circumferential peripheries of the ends in the axial direction of the glass tube (11). During operation of the lamp (10), the electrodes (18) and (19) and the glass tube (11) between the electrodes (18) and (19) and a discharge space (14) equivalently function as first and second capacitors, whose capacitances are substantially the same.
摘要:
A fluorescent lamp including a glass bulb that is in a shape of a tube. External electrodes are formed as conductive layers each of which covers an outer surface of the glass bulb at an end thereof. Metal members in a shape of a cap are respectively connected to the external electrodes by covering at least part of the external electrodes. The metal members are formed such that rims of the metal members recede from a center of the glass bulb in the tube axis direction a distance L than rims of the external electrodes.
摘要:
An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors 16 and 17 each containing a beam emitting element and a beam receiving element in an outer package, a plurality of plate-like Peltier elements 20a-20d surrounding the outer package and arranged so as to direct their heat absorbing faces toward the outer package, an aluminum inner frame 18 for embedding gaps between the outer package and the heat absorbing faces of the Peltier elements, and cooling fin groups 21a-21d arranged on the heat radiating faces of the Peltier elements; and a housing 13 having an introduction part for introducing cooling air, a discharging part for discharging the cooling air used for cooling, and measurement windows 26 and 28 through which laser beams are passed. The sensor unit SU is accommodated in the housing.
摘要:
A backlight unit has an external electrode fluorescent lamp in a housing. The external electrode fluorescent lamp includes a glass bulb having a discharge space inside, and electrodes around both ends of the glass bulb. A protective layer and a phosphor layer are formed on an internal surface of the glass bulb in this order. The glass bulb is made of soda glass, and sodium oxide precipitated from this soda glass appears on part of the internal surface of the glass bulb where the protective layer is not formed, so as to be exposed to the discharge space.
摘要:
A low-pressure discharge lamp (1) is provided that includes a glass tube (2) having an inner diameter in a range of 1 to 5 mm and a pair of electrodes (3) disposed at end portions in the glass tube (2). The pair of electrodes (3) contain at least one transition metal selected from transition metals of Groups IV to VI. Mercury and a rare gas containing argon and neon are sealed in an inner portion of the glass tube (2). A relationship between a cathode glow discharge density J and a composition index α of the sealed rare gas of the low-pressure discharge lamp (1) satisfies the following expression α≦J=I/(S·P2)≦1.5α (where S represents an effective discharge surface area (mm2) of an electrode, I represents a RMS lamp current (mA), P represents a pressure (kPa) of a sealed rare gas, and α represents a composition index of a sealed rare gas that is a constant expressed by α=(90.5A+3.4N)×10−3 when a total of a composition ratio A of argon and a composition ratio N of neon is expressed by A+N=1).
摘要:
The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要:
The present invention has an object to provide a cold-cathode fluorescent lamp which can suppress sputtering caused by electric discharge and reduce consumption of mercury so as to achieve a longer lifetime even if a lamp current is large and a lighting tube has a small diameter. The cold-cathode fluorescent lamp according to the present invention is characterized in that a distance between the inner surface of the lighting tube and the outer surface of a cylindrical electrode is set such that electric discharge develops mainly on the inner surface of the cylindrical electrode. When the lighting tube has an inside diameter D1 of 1 to 6 mm and the maximum lamp current is 5 mA or more, an outside diameter D2 of the cylinder electrode is preferably set at D1−0.4 [mm]≦D2