Solid-state imaging device and method of controlling the same
    21.
    发明授权
    Solid-state imaging device and method of controlling the same 有权
    固态成像装置及其控制方法

    公开(公告)号:US08841707B2

    公开(公告)日:2014-09-23

    申请号:US12884806

    申请日:2010-09-17

    IPC分类号: H01L27/148

    摘要: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.

    摘要翻译: 根据一个实施例,固态成像装置包括半导体区域,第一扩散层,第二扩散层,第三扩散层,绝缘膜,电位层和读取电极。 半导体区域包括第一和第二表面。 第一扩散层形成在第一表面中。 第一扩散层的浓度是在第一深度处的位置的最大值。 电荷累积层具有第二深度。 第二扩散层接触第一扩散层。 第三扩散层形成在相对于第一扩散层面对第二扩散层的位置。 绝缘膜形成在第一表面上。 电位层形成在绝缘膜上并具有预定电位。 读取电极形成在绝缘膜上。

    Solid-state imaging device and manufacturing method thereof
    22.
    发明授权
    Solid-state imaging device and manufacturing method thereof 有权
    固态成像装置及其制造方法

    公开(公告)号:US08823847B2

    公开(公告)日:2014-09-02

    申请号:US13705285

    申请日:2012-12-05

    IPC分类号: H04N3/14 H04N5/335

    摘要: According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.

    摘要翻译: 根据一个实施例,固态成像装置包括被配置为使得光电转换单元和信号扫描电路单元包括在半导体衬底中并且设置单位像素的矩阵的像素区域,以及驱动电路 区域,其被配置为使得用于驱动信号扫描电路单元的器件驱动电路设置在半导体衬底上,其中光电转换单元设置在半导体衬底的与前表面相对的背面侧上 半导体衬底,其中形成信号扫描电路单元,并且单位像素包括绝缘膜,该绝缘膜以与邻近的单位像素围绕边界部分并且限定器件隔离区域的方式设置。

    Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same
    23.
    发明授权
    Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same 失效
    光电转换膜堆叠型固态成像装置及其制造方法

    公开(公告)号:US08476573B2

    公开(公告)日:2013-07-02

    申请号:US12861238

    申请日:2010-08-23

    IPC分类号: H01L31/00

    摘要: According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.

    摘要翻译: 根据一个实施例,一种具有多个光接收层的固态成像装置,用于获取在光学方向上层叠在另一个上的不同颜色信号。 每个光接收层包括光电转换部分,其接收进入该层的背面的光并产生信号电荷,并且读取晶体管设置在该层的前侧,并读取在光电转换处产生的信号电荷 部分。 半导体层经由多个光接收层的顶层的前侧上的绝缘膜层叠。 在半导体层,提供一个信号扫描电路,处理由每个读出的晶体管读取的信号,并将不同的颜色信号从每个光接收层输出到外部。

    External-electrode discharge lamp, external-electrode discharge lamp manufacturing method, and backlight unit
    24.
    发明申请
    External-electrode discharge lamp, external-electrode discharge lamp manufacturing method, and backlight unit 审中-公开
    外部电极放电灯,外部电极放电灯制造方法和背光单元

    公开(公告)号:US20090200943A1

    公开(公告)日:2009-08-13

    申请号:US10585595

    申请日:2005-01-20

    IPC分类号: H01J65/00 H01J9/38

    摘要: The present invention aims to provide an external-electrode discharge lamp able to suppress luminance variation, a manufacturing method for the lamp, and a backlight unit. A lamp (10) of the present invention includes a glass tube (11) sealed at both ends, and electrodes (18) and (19) provided around outer circumferential peripheries of the ends in the axial direction of the glass tube (11). During operation of the lamp (10), the electrodes (18) and (19) and the glass tube (11) between the electrodes (18) and (19) and a discharge space (14) equivalently function as first and second capacitors, whose capacitances are substantially the same.

    摘要翻译: 本发明旨在提供一种能够抑制亮度变化的外部电极放电灯,灯的制造方法和背光单元。 本发明的灯具(10)包括在两端密封的玻璃管(11),以及设置在玻璃管(11)的轴向两端的外周周围的电极(18)和(19)。 在灯(10)的操作期间,电极(18)和(19)之间的电极(18)和玻璃管(11)和放电空间(14)等效地用作第一和第二电容器, 其电容基本相同。

    OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT
    26.
    发明申请
    OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT 有权
    烤箱宽度测量仪器和推出的RAM提供给仪器

    公开(公告)号:US20090103101A1

    公开(公告)日:2009-04-23

    申请号:US12224428

    申请日:2007-02-26

    IPC分类号: G01B11/02

    摘要: An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors 16 and 17 each containing a beam emitting element and a beam receiving element in an outer package, a plurality of plate-like Peltier elements 20a-20d surrounding the outer package and arranged so as to direct their heat absorbing faces toward the outer package, an aluminum inner frame 18 for embedding gaps between the outer package and the heat absorbing faces of the Peltier elements, and cooling fin groups 21a-21d arranged on the heat radiating faces of the Peltier elements; and a housing 13 having an introduction part for introducing cooling air, a discharging part for discharging the cooling air used for cooling, and measurement windows 26 and 28 through which laser beams are passed. The sensor unit SU is accommodated in the housing.

    摘要翻译: 能够在不受测量区域或测量时间的限制的情况下连续地测量烤箱宽度的烤箱宽度测量仪器具有:由激光位移传感器16和17的组合组成的传感器单元SU,每个激光位移传感器16和17均包含射束发射元件和 外包装中的光束接收元件,围绕外包装并且布置成将其吸热面引向外包装的多个板状珀耳帖元件20a-20d,铝内框架18,用于在外包装之间嵌入间隙 和珀耳帖元件的吸热面以及布置在珀耳帖元件的散热面上的散热片组21a〜21d; 以及具有用于引入冷却空气的导入部的壳体13,用于排出用于冷却的冷却空气的排出部,以及通过激光的测量窗26,28。 传感器单元SU容纳在壳体中。

    Low-pressure discharge lamp and back light device using same
    28.
    发明授权
    Low-pressure discharge lamp and back light device using same 失效
    低压放电灯和使用相同的背光灯装置

    公开(公告)号:US07358675B2

    公开(公告)日:2008-04-15

    申请号:US10502892

    申请日:2003-07-17

    CPC分类号: H01J61/72 H01J61/067

    摘要: A low-pressure discharge lamp (1) is provided that includes a glass tube (2) having an inner diameter in a range of 1 to 5 mm and a pair of electrodes (3) disposed at end portions in the glass tube (2). The pair of electrodes (3) contain at least one transition metal selected from transition metals of Groups IV to VI. Mercury and a rare gas containing argon and neon are sealed in an inner portion of the glass tube (2). A relationship between a cathode glow discharge density J and a composition index α of the sealed rare gas of the low-pressure discharge lamp (1) satisfies the following expression α≦J=I/(S·P2)≦1.5α (where S represents an effective discharge surface area (mm2) of an electrode, I represents a RMS lamp current (mA), P represents a pressure (kPa) of a sealed rare gas, and α represents a composition index of a sealed rare gas that is a constant expressed by α=(90.5A+3.4N)×10−3 when a total of a composition ratio A of argon and a composition ratio N of neon is expressed by A+N=1).

    摘要翻译: 提供一种低压放电灯(1),其包括内径为1〜5mm的玻璃管(2)和设置在玻璃管(2)的端部的一对电极(3) 。 该对电极(3)含有至少一种选自IV至VI族过渡金属的过渡金属。 汞和含有氩气和氖气的稀有气体密封在玻璃管(2)的内部。 阴极辉光放电密度J与低压放电灯(1)的密封稀有气体的成分指数α之间的关系满足以下表达式<?in-line-formula description =“In-line formula”end = “lead”?>α<= J = I /(SP 2 )<= 1.5alpha <?in-line-formula description =“In-line Formulas”end =“tail”?> 其中S表示电极的有效放电表面积(mm 2),I表示RMS灯电流(mA),P表示密封稀有气体的压力(kPa),α表示 当氩的组成比A和氖的组成比N的总和为Λ时,由α=(90.5A + 3.4N)×10 -3表示的常数的密封稀有气体的组成指数为 由A + N = 1表示)。

    Solid-state imaging device
    29.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US07355158B2

    公开(公告)日:2008-04-08

    申请号:US11826926

    申请日:2007-07-19

    IPC分类号: H01L21/00 H01L27/00

    摘要: The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

    摘要翻译: 本发明涉及固态成像装置。 根据本发明的固态成像装置包括:第一导电类型的半导体衬底上的多个单元,每个单元包括光电转换单元,该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域,用于将光电转换单元与信号扫描电路单元隔离,沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。

    Cold-cathode fluorescent lamp
    30.
    发明授权
    Cold-cathode fluorescent lamp 有权
    冷阴极荧光灯

    公开(公告)号:US06943499B2

    公开(公告)日:2005-09-13

    申请号:US10817812

    申请日:2004-04-06

    CPC分类号: H01J61/067 H01J61/72

    摘要: The present invention has an object to provide a cold-cathode fluorescent lamp which can suppress sputtering caused by electric discharge and reduce consumption of mercury so as to achieve a longer lifetime even if a lamp current is large and a lighting tube has a small diameter. The cold-cathode fluorescent lamp according to the present invention is characterized in that a distance between the inner surface of the lighting tube and the outer surface of a cylindrical electrode is set such that electric discharge develops mainly on the inner surface of the cylindrical electrode. When the lighting tube has an inside diameter D1 of 1 to 6 mm and the maximum lamp current is 5 mA or more, an outside diameter D2 of the cylinder electrode is preferably set at D1−0.4 [mm]≦D2

    摘要翻译: 本发明的目的是提供一种冷阴极荧光灯,其可以抑制由放电引起的溅射并降低汞的消耗,从而即使灯电流大并且照明管具有小直径也能实现更长的寿命。 根据本发明的冷阴极荧光灯的特征在于,照明管的内表面与圆柱形电极的外表面之间的距离被设定为使得放电主要在圆柱形电极的内表面上产生放电。 当照明管的内径D 1为1〜6mm,最大灯电流为5mA以上时,气缸电极的外径D 2优选设定为D 1 -0.4 [mm] <= D 2