公开(公告)号：US07903709B2

公开(公告)日：2011-03-08

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US07892874B2

公开(公告)日：2011-02-22

申请号：US12495122

申请日：2009-06-30

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L31/12

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US20090185594A1

公开(公告)日：2009-07-23

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/026 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20090086783A1

公开(公告)日：2009-04-02

申请号：US12236616

申请日：2008-09-24

申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/026

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

公开(公告)号：US07488613B2

公开(公告)日：2009-02-10

申请号：US11907649

申请日：2007-10-16

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

公开(公告)号：US20050141240A1

公开(公告)日：2005-06-30

申请号：US10953066

申请日：2004-09-30

申请人： Masayuki Hata ,  Ryoji Hiroyama ,  Tatsuya Kunisato ,  Keiichi Kuramoto ,  Hitoshi Hirano

发明人： Masayuki Hata ,  Ryoji Hiroyama ,  Tatsuya Kunisato ,  Keiichi Kuramoto ,  Hitoshi Hirano

IPC分类号： F21V7/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/48 ,  H01S5/00

CPC分类号： H01L33/58 ,  H01L33/44 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-curing viscous solution (precursor solution) is applied to the back surface of a substrate for forming an optically transparent layer principally composed of an inorganic material. The substrate is heated or irradiated with UV light while being pressed with unevenness of a mold. By removing the substrate from the mold, the optically transparent, inorganic material layer principally composed of the inorganic material is formed on the substrate. In this manner, the inorganic material layer with the unevenness is formed on the back surface of the substrate (a light extraction surface) by embossing.

摘要翻译： 将预固化粘性溶液（前体溶液）施加到用于形成主要由无机材料构成的光学透明层的基板的背面。 在用模具的不均匀性压制的同时，用UV光照射基板。 通过从模具中除去基材，在基材上形成主要由无机材料构成的光学透明的无机材料层。 以这种方式，通过压花在基板的背面（光提取面）上形成具有凹凸的无机材料层。

公开(公告)号：US5586136A

公开(公告)日：1996-12-17

申请号：US270056

申请日：1994-07-01

申请人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

发明人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/1039 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403

摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。

公开(公告)号：US08193016B2

公开(公告)日：2012-06-05

申请号：US12985632

申请日：2011-01-06

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20110211609A1

公开(公告)日：2011-09-01

申请号：US13100720

申请日：2011-05-04

申请人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki IZU ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/00 ,  H01L33/62

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US20110210365A1

公开(公告)日：2011-09-01

申请号：US13105386

申请日：2011-05-11

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01L33/58

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

摘要： A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在包括上表面，下表面和位错集中区域的基板的上表面上形成半导体器件层，以便将第一侧部分靠近上表面部分，以及 第二侧更靠近下表面，通过沿着位错集中区域的至少一部分去除第二侧的基板，在下表面上方露出位错集中区域不存在的部分，并且在第二侧上形成电极 一部分。