公开(公告)号：US20080210928A1

公开(公告)日：2008-09-04

申请号：US11547632

申请日：2005-10-18

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L51/10 ,  H01L27/108 ,  H01L33/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

摘要翻译： 本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件 为了。

公开(公告)号：US08227802B2

公开(公告)日：2012-07-24

申请号：US12847352

申请日：2010-07-30

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L35/24

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

公开(公告)号：US07781758B2

公开(公告)日：2010-08-24

申请号：US11587441

申请日：2005-10-13

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

公开(公告)号：US20080048180A1

公开(公告)日：2008-02-28

申请号：US11587441

申请日：2005-10-13

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L51/00

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

公开(公告)号：US08023302B2

公开(公告)日：2011-09-20

申请号：US11578057

申请日：2006-01-26

申请人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

发明人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

IPC分类号： G11C5/02

CPC分类号： G11C11/404 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/12 ,  H01L27/285

摘要： It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.

摘要翻译： 本发明的目的是提供一种非易失性存储装置，其中可以除制造步骤之外的附加数据写入以及由于重写而导致的伪造等以及具有该存储装置的半导体装置。 本发明的另一个目的是提供一种廉价的非易失性存储器件和具有高可靠性的半导体器件。 根据本发明，存储器件包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的绝缘层，其中第一导电层具有凸部。

公开(公告)号：US07935958B2

公开(公告)日：2011-05-03

申请号：US11547632

申请日：2005-10-18

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L29/08

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

摘要翻译： 本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件 为了。

公开(公告)号：US20060097250A1

公开(公告)日：2006-05-11

申请号：US11256267

申请日：2005-10-24

申请人： Jun Koyama ,  Hiroko Abe ,  Mikio Yukawa ,  Yuji Iwaki ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Hiroko Abe ,  Mikio Yukawa ,  Yuji Iwaki ,  Shunpei Yamazaki

IPC分类号： H01L29/08 ,  H01L29/04

CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0059 ,  H01L28/10

摘要： It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.

摘要翻译： 本发明的目的是提供一种半导体器件，除了制造之外，可以执行其数据写入，并且可以防止通过重写的伪造的伪造的半导体器件。 此外，本发明的另一个目的是提供一种由具有简单结构的有机存储器以低成本构成的半导体器件。 存储单元通过将具有有机化合物层的有机元件并联或串联连接的晶体管构成，并且每个存储单元串联或并联连接以构成NAND存储器或NOR存储器。 有机元素可以通过施加电流或电压，光的照射等而不可逆地改变其电性质。

公开(公告)号：US09734901B2

公开(公告)日：2017-08-15

申请号：US11249767

申请日：2005-10-14

申请人： Yasuko Watanabe ,  Yasuyuki Arai ,  Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki

发明人： Yasuko Watanabe ,  Yasuyuki Arai ,  Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki

IPC分类号： G09G3/3225 ,  G09G3/3216 ,  G11C13/00 ,  B82Y10/00 ,  G09G3/36

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G09G3/3216 ,  G09G3/3225 ,  G09G3/3648 ,  G09G2310/0251 ,  G11C13/0016

摘要： The present invention provides a display device including a nonvolatile memory circuit to which data can be added without increasing the number of manufacturing steps, and an electronic appliance using the display device. A display device of the present invention has a memory circuit that includes a memory element with a simple structure in which an organic compound layer is interposed between a pair of conductive layers. According to the present invention having the above mentioned structure, a display device having a nonvolatile memory circuit to which data can be added can be provided without increasing the number of manufacturing steps.

公开(公告)号：US07795617B2

公开(公告)日：2010-09-14

申请号：US11256267

申请日：2005-10-24

申请人： Jun Koyama ,  Hiroko Abe ,  Mikio Yukawa ,  Yuji Iwaki ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Hiroko Abe ,  Mikio Yukawa ,  Yuji Iwaki ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0059 ,  H01L28/10

摘要： It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.

摘要翻译： 本发明的目的是提供一种半导体器件，除了制造之外，可以执行其数据写入，并且可以防止通过重写的伪造的伪造的半导体器件。 此外，本发明的另一个目的是提供一种由具有简单结构的有机存储器以低成本构成的半导体器件。 存储单元通过将具有有机化合物层的有机元件并联或串联连接的晶体管构成，并且每个存储单元串联或并联连接以构成NAND存储器或NOR存储器。 有机元素可以通过施加电流或电压，光的照射等而不可逆地改变其电性质。

公开(公告)号：US20080283616A1

公开(公告)日：2008-11-20

申请号：US11578057

申请日：2006-01-26

申请人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

发明人： Mikio Yukawa ,  Hiroko Abe ,  Shunpei Yamazaki

IPC分类号： G06K19/077 ,  G11C11/00

CPC分类号： G11C11/404 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/12 ,  H01L27/285

摘要： It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.

摘要翻译： 本发明的目的是提供一种非易失性存储装置，其中可以除制造步骤之外的附加数据写入以及由于重写而导致的伪造等以及具有该存储装置的半导体装置。 本发明的另一个目的是提供一种廉价的非易失性存储器件和具有高可靠性的半导体器件。 根据本发明，存储器件包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的绝缘层，其中第一导电层具有凸部。