公开(公告)号：US11758746B2

公开(公告)日：2023-09-12

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

IPC: H01L51/50 ,  H10K50/115 ,  H10K50/15 ,  H10K85/10 ,  H10K50/16 ,  H10K71/15 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/15 ,  H10K85/115 ,  H10K85/1135 ,  H10K50/16 ,  H10K71/15 ,  H10K2102/331 ,  H10K2102/351

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US11611054B2

公开(公告)日：2023-03-21

申请号：US17199977

申请日：2021-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae Lee ,  Moon Gyu Han ,  Won Sik Yoon ,  Eun Joo Jang ,  Dae Young Chung ,  Tae Hyung Kim ,  Hyo Sook Jang

IPC: H01L51/50

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

公开(公告)号：US11575099B2

公开(公告)日：2023-02-07

申请号：US17030543

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Hwea Yoon Kim ,  Yeonkyung Lee ,  Eun Joo Jang

IPC: H01L51/50

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

公开(公告)号：US11532800B2

公开(公告)日：2022-12-20

申请号：US17008779

申请日：2020-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Su Kim ,  Kun Su Park ,  Tae Ho Kim ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

公开(公告)号：US11421151B2

公开(公告)日：2022-08-23

申请号：US15821007

申请日：2017-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul Cho ,  Jooyeon Ahn ,  Eun Joo Jang ,  Dae Young Chung ,  Hyun A Kang ,  Tae Hyung Kim ,  Yun Sung Woo ,  Jeong Hee Lee ,  Shin Ae Jun

IPC: C09K11/02 ,  H01L51/50 ,  H05B33/14 ,  C09K11/70 ,  C09K11/88 ,  F21V8/00 ,  C09K11/06 ,  H01L51/00 ,  B82Y20/00 ,  B82Y40/00

Abstract: A light emitting device including a semiconductor nanocrystal and a ligand bound to a surface of the semiconductor nanocrystal, wherein the ligand includes an organic thiol ligand or a salt thereof and a polyvalent metal compound including a metal including Zn, In, Ga, Mg, Ca, Sc, Sn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, Nb, Mo, Cd, Ba, Au, Hg, Tl, or a combination thereof, and a display device including the light emitting device.

公开(公告)号：US11251390B2

公开(公告)日：2022-02-15

申请号：US16851276

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Dae Young Chung ,  Kwanghee Kim ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hongkyu Seo ,  Heejae Lee ,  Jaejun Chang

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

公开(公告)号：US11171299B2

公开(公告)日：2021-11-09

申请号：US16296505

申请日：2019-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Eun Joo Jang ,  Moon Gyu Han ,  Tae Ho Kim ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/88 ,  H01L51/56 ,  B82Y20/00

Abstract: A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

公开(公告)号：US11133468B2

公开(公告)日：2021-09-28

申请号：US16451443

申请日：2019-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jaejun Chang ,  O Hyun Kwon ,  Tae Hyung Kim ,  Jhun Mo Son ,  Sang Jin Lee ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/00 ,  H01L51/50 ,  C09K11/88 ,  C09K11/02 ,  C09K11/66 ,  C09K11/74 ,  C09K11/59 ,  C09K11/65 ,  C09K11/08 ,  B82Y30/00

Abstract: A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein.

公开(公告)号：US10446781B2

公开(公告)日：2019-10-15

申请号：US16001227

申请日：2018-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu Seo ,  Eun Joo Jang ,  Dae Young Chung ,  Tae-Ho Kim ,  Sang Jin Lee

IPC: H01L29/08 ,  H01L51/50 ,  H01L51/52 ,  B82Y20/00 ,  B82Y30/00

Abstract: A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.

公开(公告)号：US10146985B2

公开(公告)日：2018-12-04

申请号：US15438463

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Jae Jin Park ,  Hee Chang Hwang

IPC: G06K9/00

Abstract: A sensing read-out circuit includes an amplifier circuit that converts a charge output from a sensing line of a sensor into a first voltage, another amplifier circuit that converts a charge output from another sensing line into a second voltage, another amplifier circuit that generates a first amplified voltage by amplifying a difference between the first voltage and the second voltage, an analog-to-digital converter that converts the first amplified voltage into a digital signal, a first mixer that generates a second mixed signal by mixing the first digital signal and an in-phase clock signal, a second mixer that generates a second mixed signal by mixing the first digital signal and a quadrature-phase clock signal, a first filter that generates an in-phase signal by performing low-pass filtering on the first mixed signal, and a second filter that generates a quadrature-phase signal by performing low-pass filtering on the second mixed signal.