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    MAGNETORESISTIVE SENSOR FABRICATION
    22.
    发明申请
    MAGNETORESISTIVE SENSOR FABRICATION 审中-公开
    磁传感器制造

    公开(公告)号：US20160365104A1

    公开(公告)日：2016-12-15

    申请号：US14740116

    申请日：2015-06-15

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/397 ,  G11B5/3974 ,  G11B5/398

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Abstract translation: 本文描述和要求保护的实施方案包括读取器结构，包括第一读取器，包括传感器堆叠和顶部屏蔽结构，顶部屏蔽结构包括合成反铁磁屏蔽（SAF）结构，其包括至少包括一层NiFe 和杂质添加剂，RKKY耦合层RKKY耦合层（例如，Ru层）和钉扎层。 在另一实施方案中，第一读取器的SAF屏蔽结构的RL至少包括一层非晶磁性材料。 然而，在另一实施方式中，SAF屏蔽结构包括在SAF屏蔽RL之下，SAF屏蔽RL内或SAF屏蔽RL和SAF屏蔽Ru之间的非晶磁性材料的插入层。

    MAGNETORESISTIVE SENSOR
    23.
    发明申请
    MAGNETORESISTIVE SENSOR 审中-公开
    磁传感器

    公开(公告)号：US20150311430A1

    公开(公告)日：2015-10-29

    申请号：US14263146

    申请日：2014-04-28

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev

    IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/10

    Abstract: Implementations disclosed herein provide a magnetoresistive (MR) sensor including a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer made of an alloyed layer including a ferromagnetic material and a refractory material. An implementation of the MR sensor further includes a cap layer adjacent to the second layer wherein the cap layer does not include any tantalum.

    Abstract translation: 本文公开的实施方案提供了一种磁阻（MR）传感器，其包括包含第一层CoFeB或CoFe / CoFeB的自由层和由包含铁磁材料和耐火材料的合金层制成的第二层。 MR传感器的实现还包括与第二层相邻的盖层，其中盖层不包括任何钽。

    Multi-Sensor Reader with Different Readback Sensitivities
    25.
    发明申请
    Multi-Sensor Reader with Different Readback Sensitivities 有权
    具有不同回读灵敏度的多传感器读取器

    公开(公告)号：US20150255092A1

    公开(公告)日：2015-09-10

    申请号：US14201358

    申请日：2014-03-07

    Applicant: Seagate Technology LLC

    Inventor： Declan Macken ,  Jason Gadbois ,  Eric W. Singleton ,  John M. Wolf

    IPC: G11B5/39

    CPC classification number: G11B5/3951 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/3958 ,  G11B2005/3996

    Abstract: Apparatus for sensing data from a magnetic recording medium using a multi-sensor reader with different readback sensitivities. In accordance with some embodiments, a data transducing head has first and second read sensors. The first read sensor is optimized for reading data and the second read sensor is optimized to detect thermal asperity (TA) events.

    Abstract translation: 用于使用具有不同回读敏感度的多传感器读取器来感测来自磁记录介质的数据的装置。 根据一些实施例，数据传感头具有第一和第二读取传感器。 第一个读取传感器被优化用于读取数据，第二个读取传感器被优化以检测热不均匀性（TA）事件。

    Data Reader Side Shields with Polish Stop
    27.
    发明申请
    Data Reader Side Shields with Polish Stop 有权
    数据读卡器侧面屏蔽与波兰停止

    公开(公告)号：US20140268422A1

    公开(公告)日：2014-09-18

    申请号：US13800222

    申请日：2013-03-13

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Shaun Eric McKinlay ,  Eric W. Singleton ,  Carolyn Pitcher Van Dorn ,  Levent Colak ,  Thu-Van Thi Nguyen

    IPC: G11B5/11

    CPC classification number: G11B5/112 ,  G11B5/3163 ,  G11B5/3912

    Abstract: A data reader and associated method of making are generally provided. A data reader capable of sensing adjacent data bits may be configured at least with a magnetic stack disposed between first and second side shields. Each side shield may have a polish stop layer that is tuned to provide a first predetermined polish rate.

    Abstract translation: 通常提供数据读取器和相关的制造方法。 可以至少利用设置在第一和第二侧面屏蔽之间的磁性堆叠来配置能够感测相邻数据位的数据读取器。 每个侧护罩可以具有调光以提供第一预定抛光速率的抛光停止层。

    DATA READER WITH MAGNETIC SEED LAMINATION
    28.
    发明申请
    DATA READER WITH MAGNETIC SEED LAMINATION 审中-公开
    数据读取器带磁性层压

    公开(公告)号：US20140218821A1

    公开(公告)日：2014-08-07

    申请号：US13761216

    申请日：2013-02-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Zhengqi Lu ,  Ann Lynch ,  Daniel Hassett ,  Jiansheng Xu ,  Jae-Young Yi ,  Liwen Tan ,  Eric W. Singleton

    IPC: G11B5/127

    CPC classification number: G11B5/23 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3929 ,  H01F10/3204

    Abstract: A magnetic element capable of reading data may generally be configured at least with a magnetic seed lamination disposed between a data reader stack and a magnetic shield. The magnetic seed lamination may be constructed at least with one magnetic layer coupled to the bottom shield and at least one non-magnetic layer decoupling the data reader stack from the at least one magnetic layer.

    Abstract translation: 能够读取数据的磁性元件通常可以至少配置在数据读取器堆叠和磁性屏蔽之间的磁性种子​​叠层。 磁性种子层压可以至少构成一个耦合到底部屏蔽的磁性层和至少一个非磁性层使数据读取器堆叠与至少一个磁性层分离。

    Magnetoresistive sensor fabrication
    29.
    发明授权
    Magnetoresistive sensor fabrication 有权

    公开(公告)号：US10090008B2

    公开(公告)日：2018-10-02

    申请号：US15631372

    申请日：2017-06-23

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

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