公开(公告)号：US10964252B2

公开(公告)日：2021-03-30

申请号：US16705312

申请日：2019-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Katayama ,  Daisuke Kurosaki ,  Kenichi Okazaki ,  Junichi Koezuka

IPC: G09G3/30 ,  G09G3/36 ,  H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/417

Abstract: The number of lithography processes is reduced and a high-definition display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The pixel portion includes a first transistor and a pixel electrode electrically connected to the first transistor. The driver circuit includes a second transistor and a connection portion. The second transistor includes a metal oxide film, first and second gate electrodes that face each other with the metal oxide film positioned therebetween, source and drain electrodes over and in contact with the metal oxide film, and a first wiring connecting the first and second gate electrodes. The connection portion includes a second wiring on the same surface as the first gate electrode, a third wiring on the same surface as the source electrode and the drain electrode, and a fourth wiring connecting the second wiring and the third wiring. The pixel electrode, the first wiring, and the fourth wiring are formed using the same layer.

公开(公告)号：US10672915B2

公开(公告)日：2020-06-02

申请号：US15207923

申请日：2016-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L51/52 ,  H01L29/24

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US10514580B2

公开(公告)日：2019-12-24

申请号：US16175021

申请日：2018-10-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/136 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US10514579B2

公开(公告)日：2019-12-24

申请号：US15012092

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/136 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US10431600B2

公开(公告)日：2019-10-01

申请号：US15819201

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Masami Jintyou ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

公开(公告)号：US10249645B2

公开(公告)日：2019-04-02

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US10134914B2

公开(公告)日：2018-11-20

申请号：US15451804

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US10134852B2

公开(公告)日：2018-11-20

申请号：US13920442

申请日：2013-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Takashi Hamochi ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/78 ,  H01L21/16 ,  H01L29/24 ,  H01L21/47 ,  H01L21/00 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

公开(公告)号：US10038100B2

公开(公告)日：2018-07-31

申请号：US15429234

申请日：2017-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masashi Tsubuku ,  Satoru Saito ,  Noritaka Ishihara

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

公开(公告)号：US20180151597A1

公开(公告)日：2018-05-31

申请号：US15820965

申请日：2017-11-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa ,  Kazunori Watanabe ,  Koji Kusunoki

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1335 ,  H01L29/04

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.