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公开(公告)号：US20250113706A1
公开(公告)日：2025-04-03
申请号：US18728171
申请日：2023-01-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kenichi OKAZAKI , Rai SATO , Yasutaka NAKAZAWA
IPC: H10K59/122 , H10K59/12
Abstract: A display device capable of performing display at high luminance is provided. After a first layer including a first light-emitting material emitting blue light is formed into an island shape over a first pixel electrode, a second layer including a second light-emitting material emitting light with a longer wavelength than blue light is formed into an island shape over a second pixel electrode. Then, an insulating layer overlapping with a region interposed between the first pixel electrode and the second pixel electrode is formed, and a common electrode is formed to cover the first layer, the second layer, and the insulating layer. The insulating layer is formed by performing patterning treatment and etching treatment at least twice.
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公开(公告)号：US20240334736A1
公开(公告)日：2024-10-03
申请号：US18575411
申请日：2022-06-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yukinori SHIMA , Koji ONO , Masataka NAKADA , Rai SATO , Hiroki ADACHI
IPC: H10K50/813 , H10K59/131
CPC classification number: H10K50/813 , H10K59/131
Abstract: A display apparatus with high detection sensitivity of an image capturing function and high display quality is provided. The display apparatus includes a light-receiving device; a first light-emitting device including a first lower electrode whose end portion has a first tapered shape and a first organic compound layer having a shape along the first tapered shape; a second light-emitting device including a second lower electrode whose end portion has a second tapered shape and a second organic compound layer having a shape along the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring is positioned over the common electrode and includes a region overlapping with the insulating layer.
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公开(公告)号：US20240292670A1
公开(公告)日：2024-08-29
申请号：US18576817
申请日：2022-06-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Kenichi OKAZAKI , Rai SATO
IPC: H10K59/122
CPC classification number: H10K59/122
Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting element and a second light-emitting element, in which the first light-emitting element and the second light-emitting element have a function of emitting light of different colors; the first light-emitting element includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer; the second light-emitting element includes a second pixel electrode, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer; the first EL layer includes a first layer over the first pixel electrode, and a first light-emitting layer over the first layer; the first layer includes a hole-injection layer; a region where an angle between a side surface of the first pixel electrode and a bottom surface of the first pixel electrode is greater than or equal to 60° and less than or equal to 140° is included; and a ratio (T1/T2) of a thickness T1 of the first pixel electrode with respect to a thickness T2 of a first layer is greater than or equal to 0.5.
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24.发明公开公开(公告)号：US20240237464A9
公开(公告)日：2024-07-11
申请号：US18277791
申请日：2022-02-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Daiki NAKAMURA , Rai SATO
CPC classification number: H10K59/38 , H10K59/1201 , H10K71/60 , H10K2102/103
Abstract: A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. Each of an end portion of the first pixel electrode and an end portion of the second pixel electrode is covered with the first insulating layer. The second insulating layer is positioned over the first insulating layer. The second insulating layer covers each of a side surface of the first light-emitting layer and a side surface of the second light-emitting layer.
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25.发明公开公开(公告)号：US20240172488A1
公开(公告)日：2024-05-23
申请号：US18549218
申请日：2022-02-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kenichi OKAZAKI , Yasutaka NAKAZAWA , Rai SATO
IPC: H10K59/122 , G09G3/32 , H10K59/12
CPC classification number: H10K59/122 , G09G3/32 , H10K59/1201 , G09G2300/0426 , G09G2300/0452 , G09G2300/0842
Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a first layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer; the second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer; the first light-emitting layer covers the side surface of the first pixel electrode; the second light-emitting layer covers the side surface of the second pixel electrode; the first layer is positioned over the first light-emitting layer; in a cross-sectional view, one end portion of the first layer is aligned or substantially aligned with an end portion of the first light-emitting layer and the other end portion of the first layer is positioned over the first light-emitting layer; the first insulating layer covers the top surface of the first layer, the side surface of the first light-emitting layer, and the side surface of the second light-emitting layer; and the common electrode is positioned over the first insulating layer.
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Patent Agency Ranking
26.发明公开公开(公告)号：US20240074224A1
公开(公告)日：2024-02-29
申请号：US18280287
申请日：2022-02-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kenichi OKAZAKI , Yasutaka NAKAZAWA , Rai SATO
CPC classification number: H10K50/13 , H10K50/19 , H10K59/353
Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first conductive layer, a second conductive layer over the first conductive layer, a first light-emitting layer over the second conductive layer, and a common electrode over the first light-emitting layer. The second light-emitting device includes a third conductive layer, a fourth conductive layer over the third conductive layer, a second light-emitting layer over the fourth conductive layer, and the common electrode over the second light-emitting layer. The second conductive layer covers a side surface of the first conductive layer, the fourth conductive layer covers a side surface of the third conductive layer, an end portion of the first light-emitting layer is aligned or substantially aligned with an end portion of the second conductive layer, and an end portion of the second light-emitting layer is aligned or substantially aligned with an end portion of the fourth conductive layer.
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公开(公告)号：US20240057378A1
公开(公告)日：2024-02-15
申请号：US18259287
申请日：2021-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Tomoya AOYAMA , Yasutaka NAKAZAWA , Rai SATO , Seiji YASUMOTO , Kiyofumi OGINO , Takashi SHIRAISHI
CPC classification number: H10K59/1201 , H10K59/35 , H10K59/38 , H10K71/233
Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.
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公开(公告)号：US20240049560A1
公开(公告)日：2024-02-08
申请号：US18258922
申请日：2021-12-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Rai SATO , Ryu KOKUBO , Hiroki ADACHI
CPC classification number: H10K59/8051 , H10K71/60 , H10K59/8052 , H10K50/16 , H10K50/15 , H10K59/38
Abstract: A method for manufacturing a display apparatus having high display quality is provided. A method for manufacturing a display apparatus including first to third insulators, first and second conductors, and first and second EL layers is provided. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. A first opening portion reaching the first conductor is formed in the second insulator. A sacrificial layer is formed over the second insulator and over a bottom surface of the first opening portion, and a resist is applied over the sacrificial layer. Light exposure and development are performed on the resist, so that a second opening portion reaching the sacrificial layer is formed in a region overlapping with the first conductor. A third opening portion is formed in a region of a bottom surface of the second opening portion, and the first EL layer is formed over the resist, over the sacrificial layer, and over the first conductor. Then, the resist and the sacrificial layer are removed, whereby the first EL layer over the resist and over the sacrificial layer is removed. The second EL layer is formed over the first EL layer and over the second insulator, and the second conductor and the third insulator are formed in order over the second EL layer.
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公开(公告)号：US20240038898A1
公开(公告)日：2024-02-01
申请号：US18257331
申请日：2021-12-01
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masami JINTYOU , Takahiro IGUCHI , Rai SATO
IPC: H01L29/786 , H01L33/62 , H01L29/423 , H01L25/075 , H01L25/16
CPC classification number: H01L29/7869 , H01L33/62 , H01L29/42384 , H01L25/0753 , H01L25/167
Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a gate insulating layer, agate electrode, a first insulating layer, a second insulating layer, and a conductive layer. The gate insulating layer is in contact with a top surface and a side surface of the semiconductor layer, and the gate electrode includes a region overlapping with the semiconductor layer with the gate insulating layer therebetween. The first insulating layer contains an inorganic material and is in contact with a top surface of the gate insulating layer and a top surface and a side surface of the gate electrode. The gate insulating layer and the first insulating layer include a first opening in a region overlapping with the semiconductor layer. The second insulating layer contains an organic material and includes a second opening inside the first opening. The second insulating layer is in contact with a top surface and a side surface of the first insulating layer and a side surface of the gate insulating layer. The conductive layer is electrically connected to the semiconductor layer through the second opening.
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公开(公告)号：US20240014218A1
公开(公告)日：2024-01-11
申请号：US18035150
申请日：2021-11-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Rai SATO , Yasuharu HOSAKA , Yasutaka NAKAZAWA , Takashi SHIRAISHI , Kiyofumi OGINO , Kenichi OKAZAKI
IPC: H01L27/12 , H01L29/423 , H01L29/786
CPC classification number: H01L27/1225 , H01L29/42384 , H01L29/78696 , H01L29/7869 , H01L27/1288 , H01L2029/42388 , G02F1/1368
Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer. The semiconductor layer includes a region overlapping with the gate electrode through the gate insulating layer.
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