公开(公告)号：US20150137132A1

公开(公告)日：2015-05-21

申请号：US14589369

申请日：2015-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20240334736A1

公开(公告)日：2024-10-03

申请号：US18575411

申请日：2022-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Koji ONO ,  Masataka NAKADA ,  Rai SATO ,  Hiroki ADACHI

IPC: H10K50/813 ,  H10K59/131

CPC classification number: H10K50/813 ,  H10K59/131

Abstract: A display apparatus with high detection sensitivity of an image capturing function and high display quality is provided. The display apparatus includes a light-receiving device; a first light-emitting device including a first lower electrode whose end portion has a first tapered shape and a first organic compound layer having a shape along the first tapered shape; a second light-emitting device including a second lower electrode whose end portion has a second tapered shape and a second organic compound layer having a shape along the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring is positioned over the common electrode and includes a region overlapping with the insulating layer.

公开(公告)号：US20140332251A1

公开(公告)日：2014-11-13

申请号：US14444276

申请日：2014-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA

IPC: H01B1/02 ,  H01B13/00 ,  H01B5/14

CPC classification number: H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Abstract translation: 提供适合于大尺寸基板的金属布线。 本发明的特征在于，在绝缘表面上形成至少一层导电膜，在导电膜上形成抗蚀剂图案，并且蚀刻具有抗蚀剂图案的导电膜以形成金属布线，同时控制其锥度 根据偏置功率密度，ICP功率密度，下部电极的温度，压力，蚀刻气体的总流量，或蚀刻气体中的氧气或氯气的比例来确定角度α。 这样形成的金属布线的宽度或长度波动较小，并且可以令人满意地处理基板尺寸的增加。

公开(公告)号：US20140203309A1

公开(公告)日：2014-07-24

申请号：US14223366

申请日：2014-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L33/08

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

公开(公告)号：US20140014996A1

公开(公告)日：2014-01-16

申请号：US14027871

申请日：2013-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji ONO ,  Hideomi SUZAWA ,  Tatsuya ARAO

IPC: H01L33/62

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。