摘要:
A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.
摘要:
A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
摘要:
A power storage device with high capacity is provided. A power storage device with high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode with high capacity is provided. An electrode with high energy density is provided. A highly reliable electrode is provided. Such a power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes active material particles, spaces provided on the periphery of the active material particles, graphene, and a binder. The active material particles are silicon. The active material particles and the spaces are surrounded by the graphene and the binder.
摘要:
A secondary battery which can achieve battery performance satisfactorily in a low temperature environment in cold climates or the like is provided. Further, a secondary battery having high capacity even in a low temperature environment in cold climates or the like is provided. A secondary battery includes a positive electrode, a negative electrode, and an electrolyte solution which contains a nonaqueous solvent and an electrolyte. The negative electrode includes a negative electrode active material layer. The negative electrode active material layer contains graphene, a binder, and a negative electrode active material containing a particulate alloy-based material. The nonaqueous solvent contains propylene carbonate and the electrolyte contains lithium perchlorate.
摘要:
A highly reliable electrode for a lithium-ion secondary battery is provided. A highly reliable lithium-ion secondary battery is also provided using the electrode for a lithium-ion secondary battery. The electrode for a lithium-ion secondary battery includes a current collector and an active material layer. The active material layer includes an active material, graphene, and polyimide. The active material includes a plurality of nanowires each of which grows with a silicon particle used as a nucleus and extends in one direction into a fine needle. The graphene includes a region in contact with the plurality of nanowires, and polyimide includes a region in contact with the graphene. The lithium-ion secondary battery uses the electrode as a negative electrode.
摘要:
A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.
摘要:
The number of steps is reduced in the formation process of an electrode. Deterioration of the electrode is suppressed. A highly reliable lithium secondary battery is provided by suppressing the deterioration of the electrode. A method for forming a negative electrode and a method for manufacturing a lithium secondary battery including the negative electrode are provided. In the method for forming the negative electrode, graphene oxide, a plurality of particulate negative electrode active materials, and a precursor of polyimide are mixed to form slurry; the slurry is applied over a negative electrode current collector; and the slurry applied over the negative electrode current collector is heated at a temperature higher than or equal to 200° C. and lower than or equal to 400° C. so that the precursor of the polyimide is imidized. The graphene oxide is reduced in heating the slurry to imidize the precursor of the polyimide.
摘要:
The number of steps is reduced in the formation process of an electrode. Deterioration of the electrode is suppressed. A highly reliable lithium secondary battery is provided by suppressing the deterioration of the electrode. A method for forming a negative electrode and a method for manufacturing a lithium secondary battery including the negative electrode are provided. In the method for forming the negative electrode, graphene oxide, a plurality of particulate negative electrode active materials, and a precursor of polyimide are mixed to form slurry; the slurry is applied over a negative electrode current collector; and the slurry applied over the negative electrode current collector is heated at a temperature higher than or equal to 200° C. and lower than or equal to 400° C. so that the precursor of the polyimide is imidized. The graphene oxide is reduced in heating the slurry to imidize the precursor of the polyimide.
摘要:
A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要:
A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.