公开(公告)号：US10008526B2

公开(公告)日：2018-06-26

申请号：US15238468

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Sung-Kun Park ,  Yun-Hui Yang ,  Pyong-Su Kwag ,  Dong-Hyun Woo ,  Young-Jun Kwon ,  Min-Ki Na ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L29/04 ,  H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

公开(公告)号：US09929194B2

公开(公告)日：2018-03-27

申请号：US15446775

申请日：2017-03-01

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Pyong-Su Kwag ,  Young-Jun Kwon ,  Min-Ki Na ,  Sung-Kun Park ,  Donghyun Woo ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L31/102 ,  H01L27/146 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/7827

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.