公开(公告)号：US09975756B2

公开(公告)日：2018-05-22

申请号：US15276613

申请日：2016-09-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Sebastiano Conti ,  Lorenzo Baldo ,  Flavio Francesco Villa

IPC: G01L9/00 ,  H01L21/00 ,  B81B7/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0038 ,  B81B3/0086 ,  B81B7/0019 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00269

Abstract: A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.

公开(公告)号：US12024422B2

公开(公告)日：2024-07-02

申请号：US17161367

申请日：2021-01-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Domenico Giusti

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/0051 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2203/032 ,  B81C2203/035 ,  B81C2203/0792

Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

公开(公告)号：US11294168B2

公开(公告)日：2022-04-05

申请号：US16985818

申请日：2020-08-05

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Roberto Carminati ,  Flavio Francesco Villa

IPC: G02B26/08 ,  B81C1/00 ,  B81B7/02 ,  G02B26/10 ,  H04N9/31

Abstract: A MEMS micromirror device includes a monolithic body of semiconductor material having a first main surface and a second main surface, with the monolithic body having an opening extending from the second main surface and including a suspended membrane of monocrystalline semiconductor material extending between the opening and the first main surface of the monolithic body. The suspended membrane includes a supporting frame and a mobile mass carried by the supporting frame and rotatable about an axis parallel to the first main surface, with the mobile mass having a width less than a width of the opening. A reflecting region extends over the mobile mass.

公开(公告)号：US11054327B2

公开(公告)日：2021-07-06

申请号：US16248415

申请日：2019-01-15

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Lorenzo Baldo

IPC: G01L9/00 ,  G01L27/00 ,  H01L41/113 ,  H01L41/187

Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.

公开(公告)号：US10689251B2

公开(公告)日：2020-06-23

申请号：US16522301

申请日：2019-07-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Roberto Carminati

IPC: B81C1/00 ,  B81B7/02 ,  B81B3/00

Abstract: MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

公开(公告)号：US20190064020A1

公开(公告)日：2019-02-28

申请号：US16101987

申请日：2018-08-13

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Enri DUQI ,  Lorenzo Baldo

IPC: G01L9/00

CPC classification number: G01L9/0045 ,  G01L9/0052 ,  G01L9/0054 ,  G01L13/025

Abstract: Microelectromechanical transducer comprising a semiconductor body, four cavities buried within the semiconductor body and four membranes, each membrane being suspended over a respective cavity and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer; the microelectromechanical transducer further comprising four transducer elements housed by a respective membrane and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal.

公开(公告)号：US20180148325A1

公开(公告)日：2018-05-31

申请号：US15591652

申请日：2017-05-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Domenico Giusti

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/0051 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2203/032 ,  B81C2203/035 ,  B81C2203/0792

Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

公开(公告)号：US20170144881A1

公开(公告)日：2017-05-25

申请号：US15191160

申请日：2016-06-23

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Lorenzo Baldo ,  Enri Duqi ,  Flavio Francesco Villa

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0045 ,  B81B3/0072 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00182 ,  B81C1/00325 ,  B81C2201/0116 ,  B81C2201/0173 ,  B81C2203/0785 ,  G02B26/0858

Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

公开(公告)号：US09518886B2

公开(公告)日：2016-12-13

申请号：US14950832

申请日：2015-11-24

Applicant: STMicroelectronics S.r.l.

Inventor： Lorenzo Baldo ,  Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Paul Georges Marie Rose

IPC: G01K11/00 ,  G01L19/00 ,  G01K7/01 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。

公开(公告)号：US20130215931A1

公开(公告)日：2013-08-22

申请号：US13757146

申请日：2013-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Lorenzo Baldo ,  Paul Georges Marie Rose

IPC: G01K7/01

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。