公开(公告)号：US20220102331A1

公开(公告)日：2022-03-31

申请号：US17423321

申请日：2019-11-25

Applicant: Samsung Display Co., LTD.

Inventor： Young Rag DO ,  Hoo Keun PARK

IPC: H01L25/16 ,  H01L27/12

Abstract: A display device includes a light-emitting element; a first transistor that transmits a driving current to the light-emitting element; and a second transistor that transmits a data signal to the first transistor. The first transistor includes a first active layer, the second transistor includes a second active layer including an oxide semiconductor, and the light-emitting element includes a first conductivity type semiconductor having a first polarity, a second conductivity-type semiconductor having a second polarity different from the first polarity, and an active layer arranged between the first conductivity type semiconductor and the second conductivity-type semiconductor.

公开(公告)号：US20250126952A1

公开(公告)日：2025-04-17

申请号：US19002683

申请日：2024-12-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Geun LEE ,  Byung Ju LEE ,  Hoo Keun PARK ,  Chul Jong YOO ,  Dong Eon LEE

IPC: H10H29/14 ,  H10H20/831 ,  H10H20/857

Abstract: A display device includes a first subpixel and a second subpixel, wherein the first subpixel includes a first light source unit including a plurality of first light-emitting elements configured to emit first light having a center wavelength of a first wavelength, the second subpixel includes a second light source unit including a plurality of second light-emitting elements configured to emit second light having a center wavelength of a second wavelength, the first light source unit includes first to nth light-emitting groups that are connected in series, each of the groups including the plurality of first light-emitting elements, the second light source unit includes first to mth light-emitting groups that are connected in series and each of the groups includes the plurality of second light-emitting elements, where n and m are natural numbers, and the second wavelength is different from the first wavelength.

公开(公告)号：US20250022985A1

公开(公告)日：2025-01-16

申请号：US18440136

申请日：2024-02-13

Applicant: Samsung Display Co., LTD.

Inventor： Jin Seok PARK ,  Moon Jung AN ,  Hoo Keun PARK

IPC: H01L33/38 ,  H01L25/16 ,  H01L33/40 ,  H01L33/62

Abstract: The disclosure provides a light emitting element array, a display device, and a method of manufacturing the display device. A light emitting element array includes a base substrate, each of a plurality of light emitting elements including a light emitting element rod including a third semiconductor layer, a second semiconductor layer, a light emitting layer, and a first semiconductor layer sequentially stacked on the base substrate and an insulating layer surrounding the light emitting element rod and a connection electrode disposed on the first semiconductor layer of each of the plurality of light emitting elements, wherein a diameter of the connection electrode is greater than a diameter of the light emitting element, and the connection electrode surrounds a side surface of the first semiconductor layer and a side surface of the light emitting layer.

公开(公告)号：US20230268464A1

公开(公告)日：2023-08-24

申请号：US18074580

申请日：2022-12-05

Applicant: Samsung Display Co., LTD.

Inventor： Byung Ju LEE ,  Jin Wan KIM ,  Hoo Keun PARK ,  Young Jin SONG ,  Seung Geun LEE

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/325 ,  H01L2933/0016

Abstract: A method of manufacturing a light emitting element, comprises placing a plurality of mask patterns on a substrate, forming first patterns on the substrate through the plurality of mask patterns, the first patterns recessed from an upper surface of the substrate, forming an undoped semiconductor layer on the substrate on which the first patterns are formed, etching the undoped semiconductor layer, forming a first semiconductor layer on the undoped semiconductor layer, forming an active layer on the first semiconductor layer, forming a second semiconductor layer on the active layer, and forming an electrode layer on the second semiconductor layer, wherein the undoped semiconductor layer includes second patterns recessed from a lower surface of the undoped semiconductor layer.

公开(公告)号：US20230207732A1

公开(公告)日：2023-06-29

申请号：US17885872

申请日：2022-08-11

Applicant: Samsung Display Co., LTD.

Inventor： Hoo Keun PARK ,  Jin Wan KIM ,  Sang Jo KIM ,  Su Jeong KIM

IPC: H01L33/38 ,  H01L33/62 ,  H01L27/15 ,  H01L33/14 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/382 ,  H01L27/156 ,  H01L33/005 ,  H01L33/06 ,  H01L33/62 ,  H01L33/145 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A display device includes pixel electrodes spaced apart from one another on a substrate; light-emitting elements disposed on the pixel electrodes; a common electrode layer disposed on the light-emitting elements; and an undoped semiconductor layer disposed on the common electrode layer. The display device includes nanostructures disposed in the common electrode layer and spaced apart from one another, and the common electrode layer includes a first common electrode layer disposed between the undoped semiconductor layer and the nanostructures, and a second common electrode layer disposed between adjacent nanostructures and disposed between the light-emitting elements and the nanostructures.

公开(公告)号：US20230006095A1

公开(公告)日：2023-01-05

申请号：US17757218

申请日：2020-12-07

Applicant: Samsung Display Co., LTD.

Inventor： Hoo Keun PARK ,  Moon Jung AN ,  Dong Eon LEE ,  Chul Jong YOO ,  Hye Lim KANG ,  Dong Gyun KIM

IPC: H01L33/20 ,  H01L25/16 ,  H01L33/62 ,  H01L23/00

Abstract: A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

公开(公告)号：US20220376144A1

公开(公告)日：2022-11-24

申请号：US17636218

申请日：2020-02-27

Applicant: Samsung Display Co., LTD.

Inventor： Moon Jung AN ,  Sung Chan JO ,  Hoo Keun PARK ,  Chul Jong YOO ,  Hye Lim KANG ,  Dong Gyun KIM ,  Dong Eon LEE ,  Hyun Min CHO

IPC: H01L33/44 ,  H01L25/16 ,  H01L23/00 ,  H01L33/42

Abstract: A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.

公开(公告)号：US20220367756A1

公开(公告)日：2022-11-17

申请号：US17638169

申请日：2020-02-27

Applicant: Samsung Display Co., LTD.

Inventor： Dong Eon LEE ,  Hoo Keun PARK ,  Moon Jung AN ,  Chul Jong YOO ,  Hye Lim KANG ,  Dong Gyun KIM

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/44 ,  H01L33/62

Abstract: A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.

公开(公告)号：US20220285582A1

公开(公告)日：2022-09-08

申请号：US17543297

申请日：2021-12-06

Applicant: Samsung Display Co., LTD.

Inventor： Seung A LEE ,  Hoo Keun PARK ,  Young Jin SONG

IPC: H01L33/30 ,  H01L33/18 ,  H01L33/00 ,  H01L25/075

Abstract: A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.