公开(公告)号：US20160260924A1

公开(公告)日：2016-09-08

申请号：US15002139

申请日：2016-01-20

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Yong Su LEE ,  Hye Hyang PARK ,  Eun Hyun KIM

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5237 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0023 ,  H01L51/0026 ,  H01L51/0545 ,  H01L51/56

Abstract: An organic light emitting display device according to an exemplary embodiment includes a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the substrate and covering the gate electrode; a semiconductor layer formed on the gate insulating layer; an etch stopper formed on the semiconductor layer; a passivation layer formed on the semiconductor layer and covering the etch stopper; an interlayer insulating layer formed on the passivation layer; source/drain electrodes formed on the interlayer insulating layer and not overlapping the etch stopper; a planarization layer formed on the interlayer insulating layer and covering the source/drain electrodes; an anode formed on the planarization layer so as to be connected with the drain electrode; a pixel defining layer formed on the planarization layer to partially cover the anode; an organic emission layer formed on the anode; a cathode formed on the organic emission layer and the pixel defining layer; and a sealing member formed on the cathode.

Abstract translation: 根据示例性实施例的有机发光显示装置包括：基板; 形成在所述基板上的栅电极; 栅极绝缘层，形成在所述基板上并覆盖所述栅电极; 形成在所述栅极绝缘层上的半导体层; 形成在半导体层上的蚀刻停止层; 形成在所述半导体层上并覆盖所述蚀刻停止层的钝化层; 形成在所述钝化层上的层间绝缘层; 源/漏电极，形成在层间绝缘层上，不与蚀刻停止层重叠; 形成在所述层间绝缘层上并覆盖所述源极/漏极的平坦化层; 阳极，形成在平坦化层上，以与漏电极连接; 形成在所述平坦化层上以部分地覆盖所述阳极的像素限定层; 形成在阳极上的有机发射层; 形成在有机发射层和像素限定层上的阴极; 以及形成在阴极上的密封构件。

公开(公告)号：US20140138772A1

公开(公告)日：2014-05-22

申请号：US13892574

申请日：2013-05-13

Applicant: Samsung Display Co., Ltd

Inventor： Hyun Jae NA ,  Yoon Ho KHANG ,  Sang Ho PARK ,  Dong Hwan SHIM ,  Se Hwan YU ,  Yong Su LEE ,  Myoung Geun CHA

IPC: H01L27/12

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。

公开(公告)号：US20240413248A1

公开(公告)日：2024-12-12

申请号：US18808905

申请日：2024-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H10K59/121

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20240304726A1

公开(公告)日：2024-09-12

申请号：US18665023

申请日：2024-05-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H01L29/786 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L27/12 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20240130171A1

公开(公告)日：2024-04-18

申请号：US18533509

申请日：2023-12-08

Applicant: Samsung Display Co., Ltd.

Inventor： Seong Min WANG ,  Young-In HWANG ,  Yong Ho YANG ,  Yong Su LEE ,  Jae Seob LEE ,  Gyoo Chul JO

IPC: H10K59/123 ,  G09G3/3233 ,  G09G3/3258 ,  H10K50/805 ,  H10K59/121 ,  H10K59/126 ,  H10K59/131

CPC classification number: H10K59/123 ,  G09G3/3233 ,  G09G3/3258 ,  H10K50/805 ,  H10K59/1213 ,  H10K59/126 ,  H10K59/131 ,  H10K77/111

Abstract: A display may include flexible substrate, a blocking layer on the flexible substrate, a pixel on the flexible substrate and the blocking layer, and a scan line, a data line, a driving voltage line, and an initialization voltage line connected to the pixel. The pixel may include an organic light emitting diode, a switching transistor connected to the scan line, and a driving transistor to apply a current to the organic light emitting diode. The blocking layer is in an area that overlaps the switching transistor on a plane, and between the switching transistor and the flexible substrate, and receives a voltage through a contact hole that exposes the blocking layer.

公开(公告)号：US20230223478A1

公开(公告)日：2023-07-13

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H10K59/12 ,  H01L29/66

CPC classification number: H10K59/1201 ,  H01L29/6675 ,  H10K59/1213

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20230068662A1

公开(公告)日：2023-03-02

申请号：US17982721

申请日：2022-11-08

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Joon Woo BAE ,  Ji Yeong SHIN ,  Yong Su LEE

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US20210036268A1

公开(公告)日：2021-02-04

申请号：US17075872

申请日：2020-10-21

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Joon Woo BAE ,  Ji Yeong SHIN ,  Yong Su LEE

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

公开(公告)号：US20210036080A1

公开(公告)日：2021-02-04

申请号：US16856780

申请日：2020-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM ,  Hye Na KWAK ,  Doo Na KIM ,  Sang Sub KIM ,  Thanh Tien NGUYEN ,  Yong Su LEE ,  Jae Hwan CHU

IPC: H01L27/32 ,  G09G3/3233

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.

公开(公告)号：US20200342815A1

公开(公告)日：2020-10-29

申请号：US16811514

申请日：2020-03-06

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo KIM ,  Mee Jae KANG ,  Han Bit KIM ,  Thanh Tien NGUYEN ,  Yong Su LEE ,  Jae Seob LEE

IPC: G09G3/3266 ,  G09G3/3291

Abstract: A display device including pixels is provided. Each of the pixels includes a first transistor having a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor having a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node, and a third transistor having a first gate electrode connected to the first scan line, a second gate electrode, a first electrode connected to the first node, and a second electrode connected to the third node. The second gate electrode may be in a floating state, and the third transistor may be aged to alleviate a leakage current in order to improve image generation.