ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE

    公开(公告)号:US20210167153A1

    公开(公告)日:2021-06-03

    申请号:US17151883

    申请日:2021-01-19

    IPC分类号: H01L27/32

    摘要: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210036079A1

    公开(公告)日:2021-02-04

    申请号:US16838931

    申请日:2020-04-02

    IPC分类号: H01L27/32

    摘要: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

    DISPLAY DEVICE
    4.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20190115412A1

    公开(公告)日:2019-04-18

    申请号:US15965160

    申请日:2018-04-27

    IPC分类号: H01L27/32 G09G3/3258

    摘要: A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second electrode connected to a light emitting element, a first insulating, a first conductive layer including a first gate electrode, a second insulating layer, a second conductive layer including an initialization power line, a third insulating layer, an upper semiconductor layer including a second semiconductor pattern including a second channel portion, a third electrode, and a fourth electrode connected to the first gate electrode, and a third semiconductor pattern including a third channel portion, a fifth electrode connected to the third electrode, and a sixth electrode connected to the second electrode, a fourth insulating layer, and a third conductive layer including a scan line and a control signal line, wherein the upper semiconductor layer does not overlap the first gate electrode and the initialization power line.

    DISPLAY DEVICE
    6.
    发明申请

    公开(公告)号:US20220352282A1

    公开(公告)日:2022-11-03

    申请号:US17868328

    申请日:2022-07-19

    IPC分类号: H01L27/32

    摘要: An exemplary embodiment of the present disclosure provides a display device including: a substrate; a semiconductor layer disposed on the substrate; a first transistor including a first gate electrode disposed on the semiconductor layer; a light-emitting diode connected with the first transistor; and a first layer disposed between the substrate and the semiconductor layer, wherein the semiconductor layer includes a first electrode, a second electrode, and a channel disposed between the first electrode and the second electrode, the channel includes an impurity, and the first layer overlaps the first transistor.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190326560A1

    公开(公告)日:2019-10-24

    申请号:US16203784

    申请日:2018-11-29

    摘要: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.

    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号:US20140138772A1

    公开(公告)日:2014-05-22

    申请号:US13892574

    申请日:2013-05-13

    IPC分类号: H01L27/12

    摘要: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

    摘要翻译: 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板,形成在基板上的第一绝缘层,形成在第一绝缘层上的半导体层,形成在半导体层上的第二绝缘层,以及 形成在第二绝缘层上的栅电极,其中第一绝缘层包括遮光材料,第一绝缘层的厚度大于或等于第二绝缘层的厚度。

    DISPLAY DEVICE
    10.
    发明申请

    公开(公告)号:US20230022035A1

    公开(公告)日:2023-01-26

    申请号:US17683848

    申请日:2022-03-01

    IPC分类号: H01L27/32 G06F3/044

    摘要: A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.