公开(公告)号：US20200287171A1

公开(公告)日：2020-09-10

申请号：US16883780

申请日：2020-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Hwa BAE ,  Hyun Jin CHO ,  Byoung Kwon CHOO ,  Woo Jin CHO

IPC: H01L51/56 ,  H01L27/32 ,  H01L27/12

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

公开(公告)号：US20180368270A1

公开(公告)日：2018-12-20

申请号：US15937252

申请日：2018-03-27

Applicant: Samsung Display Co. Ltd.

Inventor： Hyun Seung SEO ,  Jong Hwan CHO ,  Woo Jin CHO

IPC: H05K5/00 ,  H05K5/03 ,  H01L51/52

Abstract: A cover window includes: a flat portion including in a top plan view, first and second sides respectively extending in first and second directions; a top curved portion contacting the first side and extending therefrom in the second direction; a left curved portion contacting the second side and extending therefrom in the first direction; and a first corner curved portion which connects the top and left curved portions to each other. In cross-section, the first corner curved portion includes: and a bottom end surface which connects inner and outer surfaces to each other, in the top plan view, the bottom end surface includes: a central portion having a first width, and a peripheral portion which is disposed outside the central portion in the first and second directions, the peripheral portion having a second width smaller than the first width.

公开(公告)号：US20180358386A1

公开(公告)日：2018-12-13

申请号：US15971435

申请日：2018-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BYOUNG KWON CHOO ,  Joon Hwa BAE ,  Hyun Jin CHO ,  Jun Hyuk CHEON ,  Zi Yeon YOON ,  Woo Jin CHO ,  Sung Hwan CHOI ,  Jeong Hye CHOI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/321

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

公开(公告)号：US20180108684A1

公开(公告)日：2018-04-19

申请号：US15702797

申请日：2017-09-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jin CHO ,  Joon-Hwa BAE ,  Byoung Kwon CHOO ,  Byung Hoon KANG ,  Kwang Suk KIM ,  Woo Jin CHO ,  Jun Hyuk CHEON

IPC: H01L27/12 ,  H01L21/3105 ,  H01L21/66 ,  C09G1/02 ,  B24B31/00

CPC classification number: H01L27/1248 ,  B24B31/00 ,  C09G1/02 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0847 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L22/26 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675 ,  H01L2227/323

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.