Abstract:
Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate; formation of sequentially a gate insulating layer, an active layer, a data metal layer, and a photoresist etching mask pattern on the gate line; etching the data metal layer with the same shape as the photoresist etching mask pattern; etching the active layer by using the photoresist etching mask pattern; formation of a data line including a source electrode and a drain electrode for completing a channel region on the active layer; and formation of a pixel electrode exposing the drain electrode and electrically connected with the drain electrode, in which in the etching of the active layer, a dry-etch process is performed by using gas including at least one of NF3 and H2.
Abstract:
A touch screen display device includes: an image corrector for converting first image data for displaying on pixels to second image data for displaying on the pixels, and for generating a lookup table based on the conversion; and a processor for correcting second touch positions based on the second image data to first touch positions based on the first image data using the lookup table. A method of driving a touch screen display device includes converting first image data for displaying on pixels to second image data for displaying on the pixels, generating a lookup table based on the conversion, and correcting second touch positions based on the second image data to first touch positions based on the first image data by using the lookup table.
Abstract:
A display device Includes a control board including a timing controller (TCON) for controlling driving of the display device, and further including a driving memory for storing driving data for driving the display device, and a source board coupled to the control board by a connection cable, the source board including a driving integrated circuit (IC) for outputting a data signal, and further including a panel memory for storing panel characteristic data for compensating for the data signal.
Abstract:
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
Abstract:
A display device Includes a control board including a timing controller (TCON) for controlling driving of the display device, and further including a driving memory for storing driving data for driving the display device, and a source board coupled to the control board by a connection cable, the source board including a driving integrated circuit (IC) for outputting a data signal, and further including a panel memory for storing panel characteristic data for compensating for the data signal.