公开(公告)号：US09559227B2

公开(公告)日：2017-01-31

申请号：US14744449

申请日：2015-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  UNIST Academy-Industry Research Corporation

Inventor： Unjeong Kim ,  Younggeun Roh ,  Yeonsang Park ,  Changwon Lee ,  Soojin Park ,  Seungmin Yoo

IPC: H01L31/0232 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032

CPC classification number: C08J3/212 ,  B01J13/10 ,  B82B1/00 ,  C08J2353/00 ,  C08K3/08 ,  C08K2003/0831 ,  C09D5/24 ,  C09D153/00 ,  G02B5/008 ,  G02B2207/101 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/112 ,  H01L31/1127 ,  Y02E10/547 ,  Y10T428/24802 ,  Y10T428/24917

Abstract: Provided are a nanostructure and an optical device including the nanostructure. The nanostructure is formed on a two-dimensional material layer such as graphene and includes nanopatterns having different shapes. The nanopattern may include a first nanopattern and a second nanopattern and may be spherical; cube-shaped; or poly-pyramid-shaped, including a triangular pyramid shape; or polygonal pillar-shaped.

Abstract translation: 提供纳米结构和包括纳米结构的光学器件。 纳米结构形成在诸如石墨烯的二维材料层上，并且包括具有不同形状的纳米图案。 纳米图案可以包括第一纳米图案和第二纳米图案，并且可以是球形的; 立方体形 或多角锥形，包括三角锥形; 或多边形柱状。

公开(公告)号：US09553083B2

公开(公告)日：2017-01-24

申请号：US14804830

申请日：2015-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SNU R&DB FOUNDATION

Inventor： Yeonsang Park ,  Byoungho Lee ,  Sungwoo Hwang ,  Younggeun Roh ,  Changwon Lee

IPC: H01L23/34 ,  H01L27/02 ,  H01L23/373

CPC classification number: H01L27/0248 ,  H01L23/373 ,  H01L23/3733 ,  H01L23/3738 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus configured to control a heat flow is provided. The apparatus may include a semiconductor device region formed in a matrix; a heat rectifier region formed adjacent to the semiconductor device region; and a heat flow blocker formed in at least one region contacting the semiconductor device region and the heat rectifier region.

Abstract translation: 提供了一种配置成控制热流的装置。 该装置可以包括形成在矩阵中的半导体器件区域; 与所述半导体器件区域相邻形成的热交换器区域; 以及形成在与半导体器件区域和热整流器区域接触的至少一个区域中的热流阻塞器。

公开(公告)号：US20150035042A1

公开(公告)日：2015-02-05

申请号：US14486547

申请日：2014-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SunWoo Lee ,  Sangwoo Lee ,  Changwon Lee ,  Jeonggil Lee

IPC: H01L27/115 ,  H01L29/49

CPC classification number: H01L27/11582 ,  H01L21/28282 ,  H01L23/535 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/1159 ,  H01L29/4958 ,  H01L29/4966

Abstract: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

Abstract translation: 非易失性存储器件包括三维地布置在半导体衬底上的栅电极，从半导体衬底延伸并与栅电极的侧壁交叉的半导体图案，形成在半导体图案之间并形成在顶表面和底表面上的金属衬垫图案 以及形成在半导体图案和金属衬垫图案之间的电荷存储层。