公开(公告)号：US20230162917A1

公开(公告)日：2023-05-25

申请号：US17750742

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/00

CPC classification number: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/006 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2002/72

Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:


K1+xNaSr4-2xLaxNb10O30,  Formula 1

wherein, in Formula 1, 0

公开(公告)号：US20220415577A1

公开(公告)日：2022-12-29

申请号：US17521296

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  H01L49/02

Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.

公开(公告)号：US20220123102A1

公开(公告)日：2022-04-21

申请号：US17344672

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeoncheol PARK ,  Daejin YANG ,  Dohwon JUNG ,  Taewon JEONG

IPC: H01L49/02 ,  H01L27/108 ,  H01B3/12 ,  H01G4/12

Abstract: The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0

公开(公告)号：US20180261388A1

公开(公告)日：2018-09-13

申请号：US15848562

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daejin YANG ,  Jong Wook ROH ,  Doh Won JUNG ,  Chan KWAK ,  Hyungjun KIM ,  Woojin LEE

IPC: H01G4/10 ,  H01G4/12 ,  B82B1/00 ,  B32B15/04

CPC classification number: H01G4/10 ,  B32B15/043 ,  B32B2307/204 ,  B82B1/005 ,  H01G4/1227

Abstract: A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n−1)MnO(3n+1)]  Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.

公开(公告)号：US20180204679A1

公开(公告)日：2018-07-19

申请号：US15875386

申请日：2018-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan KWAK ,  Hyun Sik KIM ,  Jong Wook ROH ,  Kyoung-Seok MOON ,  Hyeon Cheol PARK ,  Yoon Chul SON ,  Daejin YANG ,  Doh Won JUNG ,  Youngjin CHO

IPC: H01G4/30 ,  H01G4/14

CPC classification number: H01G4/30 ,  C04B35/47 ,  C04B35/62805 ,  C04B35/62815 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/781 ,  C04B2235/79 ,  C04B2235/85 ,  C04B2237/346 ,  C04B2237/68 ,  H01C7/008 ,  H01C7/1006 ,  H01C7/18 ,  H01C17/06533 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/1245 ,  H01G4/14 ,  H01G4/232 ,  H01G4/248

Abstract: A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.