公开(公告)号：US10096688B2

公开(公告)日：2018-10-09

申请号：US15206868

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Gi-gwan Park ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

Abstract: An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.

公开(公告)号：US10038093B2

公开(公告)日：2018-07-31

申请号：US15223332

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sug-Hyun Sung ,  Jung-gun You ,  Gi-gwan Park ,  Ki-il Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/092 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L29/7843 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7851 ,  H01L29/7854

Abstract: An integrated circuit device includes a fin-type active area protruding from a substrate; a plurality of liners sequentially covering lower side walls of the fin-type active area; a device isolation layer covering the lower side walls of the fin-type active area with the plurality of liners between the device isolation layer and the fin-type active area; and a gate insulating layer extending to cover a channel region of the fin-type active area, the plurality of liners, and the device isolation layer, and including protrusions located on portions of the gate insulating layer which cover the plurality of liners.

公开(公告)号：US09991264B1

公开(公告)日：2018-06-05

申请号：US15867329

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Jung-gun You ,  Gi-gwan Park

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/0657

Abstract: An integrated circuit device includes a double-humped protrusion protruding from a surface of an inter-device isolation region. To manufacture the integrated circuit device, a plurality of grooves are formed in the inter-device isolation region of a substrate, a recess is formed by partially removing a surface of the substrate between the plurality of grooves, at least one fin-type active area is formed in a device region by etching the substrate in the device region and the inter-device isolation region, and the double-humped protrusion is formed from the surface of the substrate in the inter-device isolation region.

公开(公告)号：US09859392B2

公开(公告)日：2018-01-02

申请号：US15269001

申请日：2016-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Weon-hong Kim

IPC: H01L29/49 ,  H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/4966 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L29/42356 ,  H01L29/51 ,  H01L29/785

Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

公开(公告)号：US20170110554A1

公开(公告)日：2017-04-20

申请号：US15206868

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Gi-gwan Park ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/4991 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78696

Abstract: An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.