Semiconductor device
    22.
    发明授权

    公开(公告)号:US10511293B2

    公开(公告)日:2019-12-17

    申请号:US16103233

    申请日:2018-08-14

    Abstract: A semiconductor device may include a clock driver including a first gate line, a second gate line, a third gate line and a fourth gate line each extending in a first direction, the first gate line and the second gate line each configured to receive a clock signal, and the third gate line and the fourth gate line each configured to receive an inverted clock signal; a master latch circuit overlapping the first gate line and the third gate line such that the master latch circuit receive the clock signal from the first gate line and receive the inverted clock signal from the third gate line; and a slave latch circuit overlapping the second gate line and the fourth gate line such that the slave latch circuit receives the clock signal from the second gate line, and receives the inverted clock signal from the fourth gate line.

    Integrated circuit and semiconductor device including the same
    24.
    发明授权
    Integrated circuit and semiconductor device including the same 有权
    集成电路和半导体器件包括相同的

    公开(公告)号:US09379705B2

    公开(公告)日:2016-06-28

    申请号:US14624646

    申请日:2015-02-18

    Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.

    Abstract translation: 集成电路(IC)包括至少一个单元电池。 所述至少一个单元单元包括被配置为处理第一位信号的第一位电路,被配置为处理第二位信号的第二位电路,与所述至少一个单位单元的边界间隔开的第一阱,并被偏置到第一位 电压,第二阱偏压到不同于第一电压的第二电压。 第一和第二位电路中的每一个包括设置在第一阱中的多个晶体管中的至少一个晶体管。

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