公开(公告)号：US10026161B2

公开(公告)日：2018-07-17

申请号：US15270647

申请日：2016-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  University of Seoul Industry Cooperation Foundation

Inventor： Hojung Kim ,  Kichul Kim ,  Hongseok Lee

IPC: G06T5/10 ,  G11C11/16 ,  G06F17/14 ,  G03H1/08 ,  G11C13/00

Abstract: Provided are an apparatus and method for performing a Fourier transform. A method of performing a Fourier transform may include generating intermediate data by performing a one-dimensional fast Fourier transform (1D FFT) on data in a column direction, storing the intermediate data in a cell array in the column direction, reading out the intermediate data from the cell array in a row direction; and generating final data by performing a 1D FFT on the read-out intermediate data.

公开(公告)号：US09576840B2

公开(公告)日：2017-02-21

申请号：US14543820

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/762 ,  H01L29/66 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract translation: 一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离 在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理 使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。